Datasheet APV2002YI-W, APV2002YI-TY, APV2002YI-TU, APV2002YI-TR, APV2002KI-W Datasheet (ANPEC)

APV2002

Crystal Oscillator

Features

• Single Chip XO

• Up to 60MHz Square Wave

••

• Load Capacitors Build-in

••

••

• Feedback Resistor Build-in

••

••

• 3-State Output

••

••

• High Reliability

••

• CMOS/TTL Input Level

• CMOS/TTL Output Duty Level

••

• Fundamental Oscillator

••

••

• Frequency Divider Build-in

••

••

• 2.7V to 5.5V Supply Voltage

••

••

• High Stability Against Noise on VDD

••

••

• Chip Form and SOP-8 Package Available

••

General Description

The APV2002 is a CMOS IC that integrates all cir­cuit components required for a oscillator. It is a low
cost, low jitter, high performance oscillator, which
consists of low-current oscillator circuit and output
buffer. The IC also incorporates a high-precision, thin­film feedback resistor and load capacitors with ex­cellent frequency characteristics. It also offers fre­quency divider for application flexibility choice.

Pin Assignment

XTB

S0

S1

1

2

APV2002

3

8

XT

7

OE

6

VDD

GND

4

SOP − 8

5

QO

Ordering Information

APV2002

Handling Code
Temp. Range
Package Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

Package Code
K : SOP-8
Y : CHIP FORM
Temp. Range
I : -40 to 85°C
Handling Code
TU : Tube TY : Tray
TR : Tape & Reel W : Wafer

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APV2002

Pin Description

Pin

1
2
3
4
5
6
7
8

Note1 : Please refer frequency selector
Note2 : High or no connection : enable , Low : disable

Symbol Function

XTB Crystal drive

S0 (Note1) Frequency select pin1

S1 Frequency select pin2

GND Ground

QO Frequency output

VDD Pow er

OE (Note2) Output enable

XT Crystal feedback

Electrical Characteristics

The following specifications apply for VDD = 5V unless otherwise noted.

Symbol Parameter Test Condition

Opera ting condit ion

VDD

Supply Voltage 4.5 5 5.5 V
Ambient Temperature -40 85 °C

APV2002

Min. Typ

.

Max.

Unit

DC characteristics

Freq

IDD Operating Current

V

V

Crystal Frequency 0.5 60

Crystal 50MHz , C

Input Voltage -0.5 VDD+0.5V

IN

Output Voltage -0.5 VDD+0.5V

OUT

= 50pF

L

20

AC characteristics

Duty Waveform Symmetry 40 50 60

Tr

Rise Time 0.5V to 4.5V , C

= 50pF 3 ns

L

Tf Fall Time 4.5V to 0.5V , CL = 50pF 3 ns

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

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MHz

mA

%

APV2002

Electrical Characteristics (Cont.)

The following specifications apply for VDD = 3.3V unless otherwise noted.

Symbol Parameter Test Condition

Min. Typ

APV2002

.

Max.

Operating condition

VDD

Supply Voltage 3.0 3.3 3.6 V
Ambient Temperatur e -40 85

DC characteristics

Freq

Crystal Frequency 0.5 60

IDD Operating Current Crystal 55MHz , CL = 50pF 20 mA

V

V

Input Voltage -0.5 VDD+0.5V

IN

Output Voltage -0.5 VDD+0.5V

OUT

AC characteristics

Duty Waveform Symmetry 40 50 60

Tr

Rise Time 0.3V to 3.0V , C

= 50pF 3 ns

L

Tf Fall Time 3.0V to 0.3V , CL = 50pF 3 ns

Unit

°C

MHz

%

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

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APV2002

Pad Layout

1

2

3

4

5 6

11

10

9

8

7

Pad Description

Pad # Symbol Description

1 XTB Crystal drive
2 OE Output enable
3 S0 Frequency select pad1
4 S1 Frequency select pad2
5 GND Ground
6 C/T (Note3) Duty cycle modulation
7 QO Frequency output
8 NC (Note4) Reserve

9 VDD Power
10 OE Output enable
11 XT Crystal feedback

Note3 : C/T-no connection or connect to VDD for above 30Meg XO; connect to GND for below 30Meg XO.
Note4 : NC-no connection

Frequency Selector

S1 S0 QO

X X Default
XO
OX
OO

Note5 : X-no connection , O-connect to GND
Note6 : This function for die use only

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

2

ÒÒÒÒ

4

ÒÒÒÒ

8

ÒÒÒÒ

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APV2002

Pad Position

Y

2

3

4

(0,0)

Die Size = 716.5um * 821.5um
Pad Size = 86um * 86um
Die Thickness = 250um

Pad # Symbol

1 XTB 260 743

2 OEPAD 78 700

3 S0PAD 78 531

4 S1PAD 78 359

5 G ND 225,321 78,78

6 TCBPAD 468 78

7 QO 638 163

8 NC 638 356

9 VDD 638,638 457,553
10 OEPAD 638 700
11 XT 449 743

Note7 : Substrate should be connected to GND.
Note8 : VDD and GND are double pads.

1

5 6

11

10

9

8

7

x

Pad Center

X(um) Y(um)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

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APV2002

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

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APV2002

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APV2002

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245° C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape

W

t

E

F

A

Po

J

P

P1

Ao

C

D

Bo

Ko

D1

T2

B

Application

A B C J T1 T2 W P E

330 ± 1 62 +1.5

SOP- 8

F D D1 Po P1 Ao Bo Ko t

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

12.75+

0.15

T1

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APV2002

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002

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