Datasheet APT8075BN Datasheet (Advanced Power Technology APT)

TO-247

G

D

S

APT8075BN 800V 13.0A 0.75Ω

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

I

V

P

TJ,T

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

DSS

I

D

DM

GS

D

STG

T

L

DSS

(ON)

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

= 0V, ID = 250 µA)

(V

GS

On State Drain Current
(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID [Cont.])

Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

®

= 25°C unless otherwise specified.

C

APT APT

8075BN 8090BN

800 800

= 25°C

C

1

13 12
56 48

±30

= 25°C

C

310

2.48

-55 to 150
300

MIN TYP MAX

800

250
1000
±100

24

2

= VGS, ID = 1.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

APT8075BN
APT8090BN 800
APT8075BN 13
APT8090BN 12
APT8075BN 0.75
APT8090BN 0.90

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

UNIT

Volts

Amps

Ohms

µA

nA

Volts

APT8090BN 800V 12.0A 0.90Ω

THERMAL CHARACTERISTICS

Symbol

R
R

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

MIN TYP MAX

0.40
40

UNIT

°C/W

050-8007 Rev C

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT8075/8090BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

V

DS

f = 1 MHz

V

GS

= 0.5 V

V

DD

ID = ID [Cont.] @ 25°C

V

GS

V

= 0.5 V

DD

ID = ID [Cont.] @ 25°C

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions / Part Number

Continuous Source Current

S

(Body Diode)
Pulsed Source Current

1

(Body Diode)
Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t

Q

MIN TYP MAX

= 0V

GS

= 25V

2410 2950

370 520
120 180

= 10V

DSS

88 130

8.9 13
44 67

= 15V

DSS

13 27
18 36
62 94

= 1.8Ω

MIN TYP MAX

APT8075BN
APT8090BN 12
APT8075BN 56
APT8090BN 48

24 48

656 1200

6.2 12

13

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1
SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

LM

Characteristic

Safe Operating Area
Safe Operating Area

Inductive Current Clamped

1.0

0.5
D=0.5

0.2

0.1

0.05

0.02

0.01

, THERMAL IMPEDANCE (°C/W)

θJC

Z

0.1

0.05

0.01

0.005
SINGLE PULSE

Test Conditions / Part Number

V

= 0.4 V

DS

I

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT8075BN 56
APT8090BN 48

MIN TYP MAX

310
310

UNIT

Watts

Amps

050-8007 Rev C

0.001

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0 10

APT8075/8090BN

16

12

, DRAIN CURRENT (AMPERES)

D

VGS=6V &10V

8

4

5.5V

5V

4.5V

4V

16

12

8

4

, DRAIN CURRENT (AMPERES)

D

VGS=10V

6V

5.5V

5V

4.5V

4V

0

0 50 100 150 2 0 0 2 5 0

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

0

2

46810

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

20

16

V > I (ON) x R (ON)MAX.

DS D DS

230µ SEC. PULSE TEST

TJ = -55°C

TJ = +25°C

TJ = +125°C

12

8

4

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +125°C

TJ = +25°C

0

02468

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

16

12

2.5

2.0

= 25°C

T

J

2µ SEC. PULSE TEST

NORMALIZED TO

= 10V @ 0.5 ID [Cont.]

V

GS

VGS=10V

1.5

1.0

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

DS

0.0

0 10 20 30 40

(ON) vs DRAIN CURRENT

DS

1.2

1.1

VGS=20V

APT8075BN

1.0

8

APT8090BN

0.9

12

4

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

= 10V

V

GS

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

-50 -25 0 25 50 75 100 125 150

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

Page 146

050-8007 Rev C

APT8075BN

60

APT8090BN

OPERATION HERE

(ON)

LIMITED BY R

DS

APT8075BN
APT8090BN

10

1

T =+25°C

C

T =+150°C

, DRAIN CURRENT (AMPERES)

D

J
SINGLE PULSE

10µS

100µS

1mS

10mS

100mS

DC

10,000

1,000

100

APT8075/8090BN

C

iss

C

oss

C

rss

1 5 10 50 100 800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

10

10 30 5004020

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

ID = ID [Cont.]

VDS=80V

100

50

VDS=160V

VDS=400V

12

20

TJ = +150°C

TJ = +25°C

10

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 40 80 120 160 200

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

5

2

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

0 0.5 1.0 1.5 2.0

TO-247AD Package Outline

050-8007 Rev C

Drain

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

Dimensions in Millimeters and (Inches)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source