Datasheet APT8018JN Datasheet (Advanced Power Technology APT)

"UL Recognized" File No. E145592 (S)

D

S

G

D

SOT-227

S

ISOTOP

®

POWER MOS IV

®

APT8018JN 800V 40A 0.18Ω

SINGLE DIE ISOTOP® PACKAGE

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

APT

Symbol

V

DSS

I

D

IDM, l

LM

V

GS

P

D

TJ,T

STG

T

L

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

1

= 25°C

C

and Inductive Current Clamped

= 25°C

C

8018JN

800

40

160 ±30 690

5.52

-55 to 150 300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current (V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V

2

= VGS, ID = 5.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT8018JN

APT8018JN 40

APT8018JN 0.18

800

250 1000 ±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

Characteristic

Junction to Case

ΘJC

Case to Sink

ΘCS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.05

UNIT

0.18

°C/W

050-8038 Rev E

DYNAMIC CHARACTERISTICS

APT8018JN

Symbol

C C C

Q Q Q

td(on)

td(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions

Continuous Source Current

S

(Body Diode) Pulsed Source Current

(Body Diode) Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t Q

MIN TYP MAX

GS

= 0V

11715 14000

1430 2000

460 690

= 10V

DSS

468 700

72 110

176 265

= 15V

DSS

21 40 19 40 70 105 13 25

MIN TYP MAX

APT8018JN

APT8018JN 160

945 1800

36 60

40

1.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

PACKAGE CHARACTERISTICS

L L

Characteristic / Test Conditions

Internal Drain Inductance

D

Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)

S

(Measured From Drain Terminal to Center of Die.)

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations.

0.2 D=0.5

0.1

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.05

0.01

0.005

0.001

0.0005

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

MIN TYP MAX

2500

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

10

1.0 10

Symbol

V

Isolation

C

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

050-8038 Rev E

UNIT

3

nH

5

Volts

70

13

t

1

t

2

t

1

/

t

2

+ T

θJC

C

pF

in-lbs

APT8018JN

100

80

60

VGS=6, 8, 10 & 15V

5.5V

100

VGS=10 & 15V

8V

80

6V

5.5V

60

40

20

, DRAIN CURRENT (AMPERES)

D

4.5V

40

20

, DRAIN CURRENT (AMPERES)

D

4V

5V

0

0 100 200 300 400 0 5 10 15 20 25

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

5V

4V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

TJ = -55°C

80

TJ = +25°C

TJ = +125°C

3.5

3.0

V

TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

NORMALIZED TO

= 10V @ 0.5 ID [Cont.]

GS

2.5

60

2.0

VGS=10V

40

TJ = +125°C

20

, DRAIN CURRENT (AMPERES) I

D

TJ = +25°C

0

0 2 4 6 8 10 0 40 80 120 160 200 V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

40

TJ = -55°C

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

DS

0.5

(ON) vs DRAIN CURRENT

DS

1.2

1.5

VGS=20V

4.5V

30

1.1

1.0

20

0.9

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

050-8038 Rev E

200 100

OPERATION HERE

50

LIMITED BY R

(ON)

DS

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

10µS

100µS

1mS

10mS

100mS DC

50,000

10,000

5,000

1,000

500

APT8018JN

C

iss

C

oss

C

rss

.1

1 5 10 50 100 800 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

8

ID = ID [Cont.]

VDS=80V

VDS=160V

VDS=400V

400

100

T

=+150°C

J

T

=+25°C

J

50

T

=-55°C

10

J

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 200 400 600 800 1000 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161) W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

8.9 (.350)

9.6 (.378) Hex Nut M4

(4 places)

®

ISOTOP

050-8038 Rev E

r = 4.0 (.157)

(2 places)

is a Registered Trademark of SGS Thomson.

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

4.0 (.157)

4.2 (.165) (2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

* Source

Dimensions in Millimeters and (Inches)

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

25.2 (0.992)

12.6 (.496)

12.8 (.504)

*

Source terminals are shorted internally. Current handling capability is equal for either Source terminal.

25.4 (1.000)

Gate