Datasheet APT6045BN, APT6040BN Datasheet (Advanced Power Technology APT)

D

G

S

TO-247

APT6040BN 600V 18.0A 0.40Ω APT6045BN 600V 17.0A 0.45Ω

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

I

V

P

TJ,T

DSS

I

D

DM

GS

D

STG

T

L

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

®

= 25°C unless otherwise specified.

C

APT APT

6040BN 6045BN

600 600

= 25°C

C

1

18 17 72 68

±30

= 25°C

C

310

2.48

-55 to 150 300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current (V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])

2

Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V

= VGS, ID = 1.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT6040BN

600

APT6045BN 600 APT6040BN 18 APT6045BN 17 APT6040BN 0.40 APT6045BN 0.45

250 1000 ±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

UNIT

0.40

°C/W

40

050-6007 Rev B

DYNAMIC CHARACTERISTICS

APT6040/6045BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

t

Characteristic / Test Conditions / Part Number

Continuous Source Current

S

(Body Diode) Pulsed Source Current

1

(Body Diode)

2

Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

Q

MIN TYP MAX

GS

= 0V

2400 2950

436 610 154 230

= 10V

DSS

87 130 11 16 46 69

= 15V

DSS

14 28 23 46 63 95 23 46

MIN TYP MAX

APT6040BN APT6045BN 17 APT6040BN 72 APT6045BN 68

334 668

510

18

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1 SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-6007 Rev B

Characteristic

Safe Operating Area Safe Operating Area

Inductive Current Clamped

LM

1.0

0.5 D=0.5

0.2

0.1

0.05

0.02

0.01

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.1

0.05

0.01

0.005

0.001 10

SINGLE PULSE

-4

10

Test Conditions / Part Number

V

= 0.4 V

DS

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

I

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT6040BN 72 APT6045BN 68

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

MIN TYP MAX

310 310

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

1.0 10

UNIT

Watts

Amps

t

1

t

2

t

1

/

t

2

+ T

θJC

C

APT6040/6045BN

20

10

VGS=10V

16

VGS=6V

12

8

6V

6

5.5V

8

4

5V

4

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 2 5 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4.5V 4V

2

, DRAIN CURRENT (AMPERES)

D

0

0 1 2 3 4 5

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

20

V > I (ON) x R (ON)MAX.

DS D DS

15

230µ SEC. PULSE TEST

TJ = -55°C

TJ = +25°C

TJ = +125°C

10

5

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +125°C

TJ = +25°C

0 2 4 6 8

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

20

2.5

2.0

= 25°C

T

J

2µ SEC. PULSE TEST

NORMALIZED TO = 10V @ 0.5 ID [Cont.]

V

GS

1.5

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

DS

0.5 0 10 20 30 40 50

(ON) vs DRAIN CURRENT

DS

1.2

VGS=10V

VGS=20V

5.5V

5V

4.5V

4V

16

12

APT6040BN

APT6045BN

8

4

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

1.1

1.0

0.9

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

-50 -25 0 25 50 75 100 125 150

050-6007 Rev B

100

10

APT6040BN

APT6045BN

OPERATION HERE

LIMITED BY R

APT6040BN APT6045BN

(ON)

DS

10µS

100µS

1mS

10mS

1

T =+25°C

C

T =+150°C

, DRAIN CURRENT (AMPERES)

D

J SINGLE PULSE

.1

1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100mS

DC

0 10 20 30 40 50

APT6040/6045BN

C

iss

C

oss

C

rss

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

VDS=120V

VDS=320V

VDS=480V

12

TJ = +150°C

TJ = +25°C

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 40 80 120 1 6 0 200

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

0 .5 1.0 1.5 2.0

050-6007 Rev B

Drain

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

TO-247AD Package Outline

15.49 (.610)

16.26 (.640)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

Dimensions in Millimeters and (Inches)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC 2-Plcs.

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Drain Source