Datasheet APT6033BN, APT6030BN Datasheet (Advanced Power Technology APT)

Page 1
D
G
S
TO-247
APT6030BN 600V 23.0A 0.30 APT6033BN 600V 22.0A 0.33
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
I
V
TJ,T
DSS
I
D
DM
GS
D
STG
T
L
Parameter
Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
®
= 25°C unless otherwise specified.
C
APT APT
6030BN 6033BN
600 600
= 25°C
C
1
23 22 92 88
±30
= 25°C
C
360
2.9
-55 to 150 300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current (V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
2
Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V
= VGS, ID = 1.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT6030BN
600
APT6033BN 600 APT6030BN 23 APT6033BN 22 APT6030BN 0.30 APT6033BN 0.33
250 1000 ±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
UNIT
0.34
°C/W
40
050-6008 Rev B
Page 2
DYNAMIC CHARACTERISTICS
APT6030/6033BN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 1.8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
t
Characteristic / Test Conditions / Part Number
Continuous Source Current
S
(Body Diode) Pulsed Source Current
1
(Body Diode)
2
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
Q
MIN TYP MAX
GS
= 0V
2905 3500
505 710 190 285
= 10V
DSS
140 210
18 27 75 110
= 15V
DSS
20 40 35 70 90 130 50 100
MIN TYP MAX
APT6030BN APT6033BN 22 APT6030BN 92 APT6033BN 88
480 960
816
23
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1 SOA2
I
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-6008 Rev B
Characteristic
Safe Operating Area Safe Operating Area
Inductive Current Clamped
LM
0.5
D=0.5
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.1
0.05
0.01
0.005
0.001
0.2
0.1
0.05
0.02
0.01
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
SINGLE PULSE
-4
10
Test Conditions / Part Number
V
= 0.4 V
DS
= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
I
DS
, IDS = PD / 0.4 V
DSS
, t = 1 Sec.
DSS
APT6030BN 92 APT6033BN 88
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
10
MIN TYP MAX
360 360
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
1.0 10
UNIT
Watts
Amps
t
1
t
2
t
1
/
t
2
+ T
θJC
C
Page 3
APT6030/6033BN
20
VGS=7, 8, &10V
16
6.5V
20
16
VGS=10V
8V
7V
6.5V
12
6V
8
12
8
5.5V
4
, DRAIN CURRENT (AMPERES)
D
0
0 50 100 150 200 250 0 2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5V
4.5V
4
, DRAIN CURRENT (AMPERES)
D
0
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
40
VDS> ID (ON) x RDS (ON)MAX.
32
250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +25°C
TJ = +125°C
2.50
2.00
TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
24
1.50
VGS=10V
16
8
, DRAIN CURRENT (AMPERES) I
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R
TJ = +125°C
TJ = +25°C
0
0 2 4 6 8 10 0 10 20 30 40 50 V
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
GS
TJ = -55°C
24
1.00
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.50
DS
(ON) vs DRAIN CURRENT
1.2
DS
VGS=20V
6V
5.5V
5V
4.5V
20
16
APT6033BN
APT6030BN
1.1
1.0
12
8
, DRAIN CURRENT (AMPERES) I
4
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.9
0.8
(ON), DRAIN-TO-SOURCE BREAKDOWN R
DSS
0.7
1.4
1.2
1.0
0.8
(NORMALIZED) VOLTAGE (NORMALIZED)
(TH), THRESHOLD VOLTAGE BV
0.6
GS
V
0.4
050-6008 Rev B
Page 4
100
10
APT6030BN APT6033BN
OPERATION HERE
LIMITED BY R
APT6030BN APT6033BN
10µS
(ON)
DS
100µS
10,000
5,000
APT6030/6033BN
C
iss
1mS
10mS
1
TC =+25°C
, DRAIN CURRENT (AMPERES)
D
TJ =+150°C SINGLE PULSE
.1
1 5 10 50 100 500 1000 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100mS
DC
1,000
500
100
C
oss
C
rss
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
ID = ID [Cont.]
VDS=120V
VDS=300V
VDS=480V
200
100
50
20
10
T
J
=+150°CT
J
=+25°C
5
4
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
GS
V
0
0 40 80 120 160 200 0 0.5 1.0 1.5 2.0 2.5 3.0
Q
, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
g
2
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
DR
1
I
050-6008 Rev B
Drain
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
Dimensions in Millimeters and (Inches)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC 2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate Drain Source
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