Datasheet APT6033BN, APT6030BN Datasheet (Advanced Power Technology APT)

D

G

S

TO-247

APT6030BN 600V 23.0A 0.30Ω APT6033BN 600V 22.0A 0.33Ω

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

I

V

P

TJ,T

DSS

I

D

DM

GS

D

STG

T

L

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

®

= 25°C unless otherwise specified.

C

APT APT

6030BN 6033BN

600 600

= 25°C

C

1

23 22 92 88

±30

= 25°C

C

360

2.9

-55 to 150 300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current (V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])

2

Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V

= VGS, ID = 1.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT6030BN

600

APT6033BN 600 APT6030BN 23 APT6033BN 22 APT6030BN 0.30 APT6033BN 0.33

250 1000 ±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

UNIT

0.34

°C/W

40

050-6008 Rev B

DYNAMIC CHARACTERISTICS

APT6030/6033BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

t

Characteristic / Test Conditions / Part Number

Continuous Source Current

S

(Body Diode) Pulsed Source Current

1

(Body Diode)

2

Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

Q

MIN TYP MAX

GS

= 0V

2905 3500

505 710 190 285

= 10V

DSS

140 210

18 27 75 110

= 15V

DSS

20 40 35 70 90 130 50 100

MIN TYP MAX

APT6030BN APT6033BN 22 APT6030BN 92 APT6033BN 88

480 960

816

23

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1 SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-6008 Rev B

Characteristic

Safe Operating Area Safe Operating Area

Inductive Current Clamped

LM

0.5

D=0.5

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.1

0.05

0.01

0.005

0.001

0.2

0.1

0.05

0.02

0.01

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

Test Conditions / Part Number

V

= 0.4 V

DS

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

I

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT6030BN 92 APT6033BN 88

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

MIN TYP MAX

360 360

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

1.0 10

UNIT

Watts

Amps

t

1

t

2

t

1

/

t

2

+ T

θJC

C

APT6030/6033BN

20

VGS=7, 8, &10V

16

6.5V

20

16

VGS=10V

8V

7V

6.5V

12

6V

8

12

8

5.5V

4

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 0 2 4 6 8 10

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5V

4.5V

4

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

40

VDS> ID (ON) x RDS (ON)MAX.

32

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +25°C

TJ = +125°C

2.50

2.00

TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

24

1.50

VGS=10V

16

8

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +125°C

TJ = +25°C

0

0 2 4 6 8 10 0 10 20 30 40 50 V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

24

1.00

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.50

DS

(ON) vs DRAIN CURRENT

1.2

DS

VGS=20V

6V

5.5V

5V

4.5V

20

16

APT6033BN

APT6030BN

1.1

1.0

12

8

, DRAIN CURRENT (AMPERES) I

4

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.9

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

050-6008 Rev B

100

10

APT6030BN APT6033BN

OPERATION HERE

LIMITED BY R

APT6030BN APT6033BN

10µS

(ON)

DS

100µS

10,000

5,000

APT6030/6033BN

C

iss

1mS

10mS

1

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

.1

1 5 10 50 100 500 1000 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100mS

DC

1,000

500

100

C

oss

C

rss

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

8

ID = ID [Cont.]

VDS=120V

VDS=300V

VDS=480V

200

100

50

20

10

T

J

=+150°CT

J

=+25°C

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 40 80 120 160 200 0 0.5 1.0 1.5 2.0 2.5 3.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

2

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

050-6008 Rev B

Drain

TO-247AD Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

Dimensions in Millimeters and (Inches)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC 2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Drain Source