Datasheet APT6015JN, APT6018JN Datasheet (Advanced Power Technology APT)

Page 1
"UL Recognized" File No. E145592 (S)
D
S
S
G
G
S
D
SOT-227
APT6015JN 600V 38.0A 0.15 APT6018JN 600V 35.0A 0.18
ISOTOP
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
IDM, l
V
P
TJ,T
DSS
I
D
D
STG
T
L
Parameter
Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current
LM
Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
®
®
SINGLE DIE ISOTOP® PACKAGE
= 25°C
C
1
and Inductive Current Clamped
= 25°C
C
= 25°C unless otherwise specified.
C
APT APT
6015JN 6018JN
600 600
UNIT
Volts
38 35
152 140
Amps
±30 520
4.16
Volts
Watts
W/°C
-55 to 150 300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current (V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V
2
= VGS, ID = 2.5mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT6015JN APT6018JN 600 APT6015JN 38 APT6018JN 35 APT6015JN 0.15 APT6018JN 0.18
600
250 1000 ±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic
Junction to Case
ΘJC
Case to Sink
ΘCS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.06
UNIT
0.24
°C/W
050-6037 Rev E
Page 2
DYNAMIC CHARACTERISTICS
APT6015/6018JN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 0.6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
Characteristic / Test Conditions
Continuous Source Current
S
(Body Diode) Pulsed Source Current
(Body Diode) Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
2
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
t
Q
MIN TYP MAX
GS
= 0V
5540 6500 1025 1450
375 570
= 10V
DSS
242 370
30 45
118 175
= 15V
DSS
15 30 24 48 46 75 13 26
MIN TYP MAX
APT6015JN APT6018JN 35 APT6015JN 152 APT6018JN 140
660 1200
12 24
38
1.8
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
PACKAGE CHARACTERISTICS
L L
Characteristic / Test Conditions
Internal Drain Inductance
D
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
S
(Measured From Drain Terminal to Center of Die.)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations.
0.3
D=0.5
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.05
0.01
0.005
0.001
MIN TYP MAX
2500
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
10
1.0 10
Symbol
V
Isolation
C
Isolation
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
050-6037 Rev E
UNIT
3
nH
5
Volts
35
13
t
1
t
2
t
1
/
t
2
+ T
θJC
C
pF
in-lbs
Page 3
APT6015/6018JN
100
80
VGS=8, 10 & 15V
7V
100
VGS=15V
80
VGS=10V
8V
7V
60
6V
40
20
, DRAIN CURRENT (AMPERES)
D
0
0 50 100 150 200 250 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5.5V
5V
4.5V 4V
60
40
20
, DRAIN CURRENT (AMPERES)
D
0
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
100
VDS> ID (ON) x RDS (ON)MAX.
80
250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55°C
3.0
2.5
TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
TJ = +25°C
60
2.0
TJ = +125°C
VGS=10V
40
1.5 VGS=20V
20
, DRAIN CURRENT (AMPERES) I
D
TJ = +125°C TJ = +25°C
0
0 2 4 6 8 10 0 40 80 120 160
V
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
GS
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R
TJ = -55°C
40
1.0
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.5
DS
(ON) vs DRAIN CURRENT
1.2
DS
6V
5.5V
5V
4.5V 4V
30
20
APT6015JN
APT6018JN
1.1
1.0
0.9
10
, DRAIN CURRENT (AMPERES) I
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.8
(ON), DRAIN-TO-SOURCE BREAKDOWN R
DSS
0.7
1.4
1.2
1.0
0.8
(NORMALIZED) VOLTAGE (NORMALIZED)
(TH), THRESHOLD VOLTAGE BV
0.6
GS
V
0.4
050-6037 Rev E
Page 4
200
APT6015JN APT6018JN
100
OPERATION HERE
50
LIMITED BY R
APT6015JN APT6018JN
(ON)
DS
10
5
1
TC =+25°C
.5
, DRAIN CURRENT (AMPERES)
D
TJ =+150°C SINGLE PULSE
10µS
100µS
1mS
10mS 100mS DC
20,000
10,000
5,000
1,000
500
APT6015/6018JN
C
iss
C
oss
C
rss
.1
1 5 10 50 100 600 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
ID = ID [Cont.]
16
12
VDS=120V
VDS=300V
VDS=480V
8
4
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
GS
V
0
0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0
Q
, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
g
200
160
120
T
=+150°C
80
J
T
J
=+25°C
40
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
DR
0
I
T
=-55°C
J
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161) W=4.3 (.169)
H=4.8 (.187) H=4.9 (.193)
(4 places)
8.9 (.350)
9.6 (.378) Hex Nut M4
(4 places)
®
ISOTOP
050-6037 Rev E
r = 4.0 (.157) (2 places)
is a Registered Trademark of SGS Thomson.
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
4.0 (.157)
4.2 (.165) (2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
* Source Drain
* Source
Dimensions in Millimeters and (Inches)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
*
Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
Gate
25.2 (0.992)
25.4 (1.000)
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