Datasheet APT6015JN, APT6018JN Datasheet (Advanced Power Technology APT)

"UL Recognized" File No. E145592 (S)

D

S

G

S

D

SOT-227

APT6015JN 600V 38.0A 0.15Ω APT6018JN 600V 35.0A 0.18Ω

ISOTOP

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

IDM, l

V

P

TJ,T

DSS

I

D

GS

D

STG

T

L

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current

LM

Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

®

SINGLE DIE ISOTOP® PACKAGE

= 25°C

C

1

and Inductive Current Clamped

= 25°C

C

= 25°C unless otherwise specified.

C

APT APT

6015JN 6018JN

600 600

UNIT

Volts

38 35

152 140

Amps

±30 520

4.16

Volts

Watts

W/°C

-55 to 150 300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current (V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V

2

= VGS, ID = 2.5mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT6015JN APT6018JN 600 APT6015JN 38 APT6018JN 35 APT6015JN 0.15 APT6018JN 0.18

600

250 1000 ±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

Characteristic

Junction to Case

ΘJC

Case to Sink

ΘCS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.06

UNIT

0.24

°C/W

050-6037 Rev E

DYNAMIC CHARACTERISTICS

APT6015/6018JN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions

Continuous Source Current

S

(Body Diode) Pulsed Source Current

(Body Diode) Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t

Q

MIN TYP MAX

GS

= 0V

5540 6500 1025 1450

375 570

= 10V

DSS

242 370

30 45

118 175

= 15V

DSS

15 30 24 48 46 75 13 26

MIN TYP MAX

APT6015JN APT6018JN 35 APT6015JN 152 APT6018JN 140

660 1200

12 24

38

1.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

PACKAGE CHARACTERISTICS

L L

Characteristic / Test Conditions

Internal Drain Inductance

D

Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)

S

(Measured From Drain Terminal to Center of Die.)

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations.

0.3

D=0.5

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.05

0.01

0.005

0.001

MIN TYP MAX

2500

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

10

1.0 10

Symbol

V

Isolation

C

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

050-6037 Rev E

UNIT

3

nH

5

Volts

35

13

t

1

t

2

t

1

/

t

2

+ T

θJC

C

pF

in-lbs

APT6015/6018JN

100

80

VGS=8, 10 & 15V

7V

100

VGS=15V

80

VGS=10V

8V

7V

60

6V

40

20

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5.5V

5V

4.5V 4V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

VDS> ID (ON) x RDS (ON)MAX.

80

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

TJ = -55°C

3.0

2.5

TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

TJ = +25°C

60

2.0

TJ = +125°C

VGS=10V

40

1.5 VGS=20V

20

, DRAIN CURRENT (AMPERES) I

D

TJ = +125°C TJ = +25°C

0

0 2 4 6 8 10 0 40 80 120 160

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = -55°C

40

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.5

DS

(ON) vs DRAIN CURRENT

1.2

DS

6V

5.5V

5V

4.5V 4V

30

20

APT6015JN

APT6018JN

1.1

1.0

0.9

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

050-6037 Rev E

200

APT6015JN APT6018JN

100

OPERATION HERE

50

LIMITED BY R

APT6015JN APT6018JN

(ON)

DS

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

10µS

100µS

1mS

10mS 100mS DC

20,000

10,000

5,000

1,000

500

APT6015/6018JN

C

iss

C

oss

C

rss

.1

1 5 10 50 100 600 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

VDS=120V

VDS=300V

VDS=480V

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

200

160

120

T

=+150°C

80

J

T

J

=+25°C

40

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

0

I

T

=-55°C

J

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161) W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

8.9 (.350)

9.6 (.378) Hex Nut M4

(4 places)

®

ISOTOP

050-6037 Rev E

r = 4.0 (.157) (2 places)

is a Registered Trademark of SGS Thomson.

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

4.0 (.157)

4.2 (.165) (2 places)

3.3 (.129)

3.6 (.143)

1.95 (.077)

2.14 (.084)

* Source Drain

* Source

Dimensions in Millimeters and (Inches)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

*

Source terminals are shorted internally. Current handling capability is equal for either Source terminal.

Gate

25.2 (0.992)

25.4 (1.000)