N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGSAll Ratings: T
Symbol
V
IDM, l
V
P
TJ,T
DSS
I
D
GS
D
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
LM
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
®
®
SINGLE DIE ISOTOP® PACKAGE
= 25°C
C
1
and Inductive Current Clamped
= 25°C
C
= 25°C unless otherwise specified.
C
APTAPT
6015JN6018JN
600600
UNIT
Volts
3835
152140
Amps
±30
520
4.16
Volts
Watts
W/°C
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MINTYPMAX
0.06
UNIT
0.24
°C/W
050-6037 Rev E
Page 2
DYNAMIC CHARACTERISTICS
APT6015/6018JN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
Characteristic / Test Conditions
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
2
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
t
Q
MINTYPMAX
GS
= 0V
55406500
10251450
375570
= 10V
DSS
242370
3045
118175
= 15V
DSS
1530
2448
4675
1326
MINTYPMAX
APT6015JN
APT6018JN35
APT6015JN152
APT6018JN140
6601200
1224
38
1.8
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
PACKAGE CHARACTERISTICS
L
L
Characteristic / Test Conditions
Internal Drain Inductance
D
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
S
(Measured From Drain Terminal to Center of Die.)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
0.3
D=0.5
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.05
0.01
0.005
0.001
MINTYPMAX
2500
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
10
1.010
Symbol
V
Isolation
C
Isolation
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
050-6037 Rev E
UNIT
3
nH
5
Volts
35
13
t
1
t
2
t
1
/
t
2
+ T
θJC
C
pF
in-lbs
Page 3
APT6015/6018JN
100
80
VGS=8, 10 & 15V
7V
100
VGS=15V
80
VGS=10V
8V
7V
60
6V
40
20
, DRAIN CURRENT (AMPERES)
D
0
050100150200250048121620
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)