Datasheet APT6013JVR Datasheet (Advanced Power Technology APT)

APT6013JVR

600V 40A 0.130Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

S

G

®

ISOTOP

G

D

®

S

SOT-227

"UL Recognized"

D

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

APT6013JVR

600

40

160

±30
±40

500

4

-55 to 150
300

30
30

1300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

600

40

24

0.130
50

500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5619 Rev -

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT6013JVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

8800 10560
1050 1470

420 630
360 540

42 65

160 240

14 28
14 28
50 75

714

MIN TYP MAX

40

160

1.3

730

19

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5619 Rev -

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R
R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting T

0.3

D=0.5

0.1

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W)

JC

Z

θ

0.05

0.01

0.005

0.001

-5

10

+25°C, L = 2.89mH, R

j

=

-1

10

MIN TYP MAX

0.25
40

2500

13

25Ω, Peak IL = 30A

G

=

1.0 10

UNIT

°C/W

Volts

lb•in

APT6013JVR

100

80

60

VGS=6V, 7V, 10V & 15V

5.5V

100

80

VGS=7V, 10V & 15V

6V

5.5V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 300 0 3 6 9 12 15
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5V

4.5V

40

20

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

80

60

40

20

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

02468 01530456075

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

40

1.20

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.15

1.10

1.05

VGS=10V

VGS=20V

1.00

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.95

DS

1.15

5V

4.5V

32

24

16

8

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

1.10

1.05

1.00

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5619 Rev -

200
100

50

OPERATION HERE

LIMITED BY RDS (ON)

10µS

100µS

30,000

10,000

APT6013JVR

C

iss

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TJ =+150°C
SINGLE PULSE

.1

1 5 10 50 100 600 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

0

0 150 300 450 600 750 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

VDS=120V

VDS=300V

VDS=480V

1mS

10mS

100mS
DC

5,000

1,000

500

100

200

100

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

T

=+150°C T

J

C

C

=+25°C

J

oss

rss

SOT-227 (ISOTOP®) Package Outline

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

r = 4.0 (.157)
(2 places)

4.0 (.157)

4.2 (.165)
(2 places)

1.95 (.077)

2.14 (.084)

14.9 (.587)

15.1 (.594)

3.3 (.129)

3.6 (.143)

* Source Drain

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

* Source

Dimensions in Millimeters and (Inches)

V

, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum

Isolation

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)
Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5619 Rev -

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

"UL Recognized" File No. E145592