Page 1
APT6011LVFR
600V 49A 0.110W
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
FREDFET
TO-264
®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode • 100% Avalanche Tested
D
• Lower Leakage • Popular TO-264 Package
• Faster Switching
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ T
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
ADVANCED TECHNICAL
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
= 25°C
C
1
4
INFORMATION
G
APT6011LVFR
600
49
196
±30
±40
625
5.0
-55 to 150
300
49
50
3000
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 9215 15 FAX: (33)556 47 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
(V
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
600
49
24
0.110
250
1000
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-8060 Rev- 12-99
Page 2
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 V
ID = I
[Cont.] @ 25°C
D
V
GS
= 0.5 V
V
DD
ID = I
[Cont.] @ 25°C
D
R
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
= 0V
GS
= 15V
= 0.6W
G
DSS
DSS
APT6011LVFR
MIN TYP MAX
8310
990
390
370
51
156
17
16
63
6
UNIT
pF
nC
ns
Symbol
I
I
SM
V
dv
t
Q
I
RRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
Pulsed Source Current
Diode Forward Voltage
SD
Peak Diode Recovery dv/
/
dt
Reverse Recovery Time
rr
ADVANCED TECHNICAL
= -ID [Cont.], di/dt = 100A/µs)
(I
S
1
(Body Diode)
2
dt
Reverse Recovery Charge
rr
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
(VGS = 0V, IS = -ID [Cont.])
5
T
= 25°C 300
j
INFORMATION
T
= 125°C 600
j
T
= 25°C 2.0
j
T
= 125°C 6.8
j
T
= 25°C 15
j
T
= 125°C 27
j
THERMAL CHARACTERISTICS
Symbol
R
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
qJC
Junction to Ambient
qJA
4
Starting T
5
IS £ ID [Cont.],
+25°C, L = 2.49mH, R
j
=
di
/
TO-264 Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
19.51 (.768)
20.50 (.807)
= 100A/µs, T
dt
3.10 (.122)
3.48 (.137)
MIN TYP MAX
49
196
1.3
5
MIN TYP MAX
0.20
40
25W, Peak IL = 49A
G
=
150°C, R
j
£
= 2.0W, VR = 200V.
G
UNIT
Amps
Volts
V/ns
ns
µC
Amps
UNIT
°C/W
050-8060 Rev- 12-99
Drain
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
Loading...