Datasheet APT50M75JLLU2 Datasheet (Advanced Power Technology APT)

APT50M75JLLU2

APT50M75JLLU2

500V 51A 0.075W

POWER MOS 7

TM

S

K

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

51

51
50

D

®

D

S

SOT-227

"UL Recognized"

K

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

G

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

ISOTOP

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

G

• Lower Gate Charge, Qg •PFC "Boost" Configuration

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy

ADVANCE TECHNICAL

Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

INFORMATION

= 25°C

C

1

4

APT50M75JLLU2

500

204
±30
±40
465

3.72

-55 to 150
300

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

500

51

35

0.075
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7095 Rev - 10-2001

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT50M75JLLU2

Symbol

C
C
C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t
Q

dv

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

ADVANCE TECHNICAL

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

/

Peak Diode Recovery dv/

dt

1

(Body Diode)

dt

INFORMATION

)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

= -I

S

5

, dlS/dt = 100A/µs)

D[Cont.]

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

5800
1200

90

145

38
66
17
14
38

5

MIN TYP MAX

51

204

1.3

620

14.7
8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

V/ns

050-7095 Rev - 10-2001

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

0.3
D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

numbers reflect the limitations of the test circuit rather than the

dt

device itself. I

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 1.92mH, R

j

=

S

10

£ -I

-1

MIN TYP MAX

G

di

/

£ 700A/µs V

D[Cont.

dt

]

1.0 10

0.27
40

25W, Peak IL = 51A

=

£ V

R

DSS

T

UNIT

°C/W

£ 150°C

J

APT50M75JLLU2

Diode Specifications Section

MAXIMUM RATINGS (UltraFast Recovery Diode) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

V

RRM

V

RWM

IF(AV)

(RMS)

I

F

I

FSM

TJ,T

T

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

R

Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)
Operating and StorageTemperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

I

RM

Characteristic / Test Conditions

ADVANCE TECHNICAL

Maximum Forward Voltage I

F

Maximum Reverse Leakage Current VR = VR Rated

INFORMATION

= 80°C, Duty Cycle = 0.5)

C

I

= 30A

F

= 60A

F

IF = 30A, TJ = 150°C

VR = VR Rated, TJ = 125°C

APT50M75JLLU2

600

30
60

320

-55 to 150
300

MIN TYP MAX

1.8

1.5

1.6
250
500

UNIT

Volts

Amps

°C

UNIT

Volts

µA

C

Junction Capacitance, V

T

= 200V

R

40

pF

050-7095 Rev - 10-2001

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT50M75JLLU2

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I

= 1.0A, diF/dt = -15A/µS, VR = 30V, TJ = 25°C

F

MIN TYP MAX

Reverse Recovery Time TJ = 25°C

= 30A, diF/dt = -240A /µS, VR = 350V TJ = 100°C

I

F

Forward Recovery Time TJ = 25°C

= 30A, diF/dt = 240A /µS, VR = 350V TJ = 100°C

I

F

155
155

Reverse Recovery Current TJ = 25°C

= 30A, diF/dt = -240A /µS, VR = 350V TJ = 100°C

I

F

Recovery Charge T

= 25°C

J

IF = 30A, diF/dt = -240A /µS, VR = 350V TJ = 100°C
Forward Recovery Voltage T

= 30A, diF/dt = 240A /µS, VR = 350V TJ = 100°C

I

F

Rate of Fall of Recovery Current TJ = 25°C

ADVANCE TECHNICAL

= 30A, diF/dt = -240A/µS, VR = 350V (See Figure 10) TJ = 100°C

I

F

INFORMATION

= 25°C

J

7.5 15
100
300

400
200

50 65
50
80

410

5
5

UNIT

nS

Amps

nC

Volts

A/µS

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

R

qJC

R

W

0.05

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.01

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance

qJA

Package Weight

T

2.0

1.0

0.5

0.1

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

MIN TYP MAX

0.90
20

1.06
30

UNIT

°C/W

oz.

gm.

050-7095 Rev - 10-2001

0.005

-5

10

FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

10

-1

1.0 10

APT50M75JLLU2

100

80

60

40

, FORWARD CURRENT

F

20

TJ = 150°C
TJ = 100°C

TJ = 25°C

TJ = -55°C

1600

1200

, REVERSE RECOVERY CHARGE

rr

800

400

TJ=100°C

VR=350V

60A

30A

15A

0

0 0.5 1.0 1.5 2.0 2.5 10 50 100 500 1000

Figure 15, Forward Voltage Drop vs Forward Current Figure 16, Reverse Recovery Charge vs Current Slew Rate

, REVERSE RECOVERY CURRENT I

RRM

Figure 17, Reverse Recovery Current vs Current Slew Rate Figure 18, Dynamic Parameters vs Junction Temperature

, REVERSE RECOVERY TIME I

rr

Figure 19, Reverse Recovery Time vs Current Slew Rate Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

40

TJ=100°C
VR=350V

30

20

10

0

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

200

TJ=100°C
VR=350V

160

120

80

40

0

0 200 400 600 800 1000 0 200 400 600 800 1000

/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

di

F

800

30A

ADVANCE TECHNICAL

60A

30A

15A

60A

15A

, DYNAMIC PARAMETERS Q

INFORMATION

f

, FORWARD RECOVERY TIME K

fr

t

0

2.0

1.6

1.2

0.8

0.4

0.0

2500

2000

1500

1000

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

500

I

TJ=100°C
VR=350V

IF=30A

0

RRM

Q

rr

t

rr

t

rr

Q

rr

25

20

V

fr

t

fr

15

10

5

0

(VOLTS)

, FORWARD RECOVERY VOLTAGE

fr

V

500

100

(pico-FARADS) (nano-SECONDS) (AMPERES) (AMPERES)

, JUNCTION CAPACITANCE t

J

C

50

30

0.01 0.05 0.1 0.5 1 5 10 50 100 200

Figure 21, Junction Capacitance vs Reverse Voltage

V

, REVERSE VOLTAGE (VOLTS)

R

050-7095 Rev - 10-2001

30µH

V

r

APT50M75JLLU2

D.U.T.

t

Q

/

rr

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 22, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

di

2

/dt - Current Slew Rate, Rate of Forward

F

Current Change Through Zero Crossing.

1

Zero

3
4

5
6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line

ADVANCE TECHNICAL

Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

INFORMATION

and trr.

RRM

F

6

{

diM/dt

RRM

}

.

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

Figure 23, Diode Reverse Recovery Waveform and Definitions

PEARSON 411

CURRENT

TRANSFORMER

3

2

rr.

4

6

5

0.5 I

RRM

0.75 I

RRM

Q

rr

= 1/

t

I

(

rr

2

)

RRM

.

r = 4.0 (.157)

(2 places)

SOT-227 (ISOTOP®) Package Outline

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

Dimensions in Millimeters and (Inches)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

Cathode Drain

Source

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

12.6 (.496)

12.8 (.504)

Changed 2/10/99

Gate

25.2 (0.992)

25.4 (1.000)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7095 Rev - 10-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

"UL Recognized" File No. E145592