Datasheet APT50GF60LRD, APT50GF60B2RD Datasheet (Advanced Power Technology APT)

Page 1
APT50GF60B2RD
APT50GF60LRD
600V 80A
APT50GF60B2RD
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-
T-Max
(B2RD)
TO-264
(LRD)
Punch Through Technology the Fast IGBT™ combined with an APT free­wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
G
C
E
G
C
APT50GF60LRD
E
C
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
I
C1
I
C2
I
CM1
I
CM2
P
TJ,T
T
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R Gate-Emitter Voltage
GE
Continuous Collector Current @ T Continuous Collector Current @ T Pulsed Collector Current Pulsed Collector Current Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20K)
GE
= 25°C
C
= 90°C
C
1
@ TC = 25°C
1
@ TC = 90°C
G
APT50GF60B2RD/LRD
600 600 ±20
80
50 160 100 300
-55 to 150 300
UNIT
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol
BV
VGE(TH)
V
CE
I
CES
I
GES
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 5792 15 15 FAX: (33) 556 47 97 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (V Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C) Collector Cut-off Current (V Collector Cut-off Current (VCE = V Gate-Emitter Leakage Current (VGE = ±20V, V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
= VGE, IC = 700µA, Tj = 25°C)
CE
= V
CE
CES
CES
APT Website - http://www.advancedpower.com
= 0V, IC = 0.50mA)
GE
, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 125°C)
= 0V)
CE
2
2
MIN TYP MAX
600
4.5 5.5 6.5
2.1 2.7
2.2 2.8
0.50
TBD
±100
UNIT
Volts
mA
nA
052-6253 Rev A
Page 2
DYNAMIC CHARACTERISTICS (IGBT) APT50GF60B2RD/LRD
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy
4
Turn-off Switching Energy Total Switching Losses
4
Turn-on Delay Time Rise Time
PRELIMINARY
Turn-off Delay Time Fall Time Total Switching Losses
4
Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= .8V
CC
CES
I
= I
C
C2
RG = 10
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
= 15V
GE
I
= I
C
C2
R
= 10
G
T
= +150°C
J
Inductive Switching (25
V
(Peak) = 0.66V
CLAMP
V
= 15V
GE
I
= I
C
C2
R
= 10
G
T
= +25°C
J
V
= 20V, I
CE
CES
°C)
CES
= I
C
C2
MIN TYP MAX
2600 3600
475 710 165 250
170 225
25 45
100 140
20 100 160 200
30 50
90 135 290 435 170 340
2.2
2.4
4.6 30 90
260 100
4.3
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
R
ΘJC
R
ΘJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
052-6253 Rev A
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient
Package Weight
T
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX
0.42
0.66 40
0.22
6.1 10
1.1
UNIT
°C/W
oz
gm lb•in N•m
Page 3
APT50GF60B2RD/LRD
PRELIMINARY
Power dissipation
P
= ƒ(
T
tot
parameter:
P
tot
)
C
150 °C
T
j
320
W
240
200
160
120
80
40
0
0 20 40 60 80 100 120 °C 160
Collector current
I
= ƒ(
T
C
parameter:
I
C
T
C
)
C
15 V ,
V
GE
80
A
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
T
j
150 °C
T
C
Safe operating area
I
= ƒ(
V
10
10
10
10
10
A
)
CE
D
= 0
, T
C
3
2
1
0
-1
10
0
10
1
C
parameter:
I
C
= 25°C ,
10
T
2
150 °C
j
t
DC
= 2.9µs
p
10 µs
100 µs
1 ms
10 ms
10 3 V
Transient thermal impedance IGBT
Z
= ƒ(
t
10
10
10
10
-1
-2
-3
0
10
p
-5
)
D = t
/
T
p
single pulse
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
10
-1
10 0 s
t
p
th JC
parameter:
K/W
Z
thJC
V
CE
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)557 92 15 15 FAX: (33) 55647 97 61
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
052-6253 Rev A
Page 4
APT50GF60B2RD/LRD
PRELIMINARY
Typ. output characteristics
I
=
f (V
C
parameter:
I
C
)
CE
t
= 80 µs,
p
100
A
17V 15V
80
13V 11V 9V
70
7V
60
50
40
30
20
10
0
0 1 2 3 V 5
T
= 25 °C
j
Typ. output characteristics
IC = f (V
parameter:
I
C
V
CE
)
CE
t
= 80 µs,
p
100
A
17V
80
70
60
50
40
30
20
10
15V 13V 11V 9V 7V
0
0 1 2 3 V 5
T
= 125 °C
j
V
CE
Short circuit safe operating area
I
=
f (V
) ,
T
Csc
parameter:
10
I
I
Csc/IC2
Csc
/
I
C(90°C)
6
4
2
0
0 100 200 300 400 500 600 V 800
CE
j
V
= ± 15 V,
GE
= 150°C
t
10 µs, L < 50 nH
sc
Reverse biased safe operating area
I
= f (VCE) ,
Cpuls
parameter:
2.5
I
I
Cpulse/IC1
Cpuls
V
CE
/
I
C
1.5
1.0
0.5
0.0 0 100 200 300 400 500 600 V 800
V
GE
T
= 150°C
j
= 15 V
V
CE
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 557 92 15 15 FAX: (33) 556 47 97 61
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
052-6253 Rev A
Page 5
APT50GF60B2RD/LRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
V
RRM
V
RWM
IF(AV)
I
(RMS)
F
I
FSM
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
R
Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T RMS Forward Current Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
= 85°C, Duty Cycle = 0.5)
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Symbol
V
Characteristic / Test Conditions
Maximum Forward Voltage I
F
I
F
F
IF = 60A, TJ = 150°C
= 60A = 120A
APT50GF60B2RD/LRD
600
60 100 600
MIN TYP MAX
1.8
1.75
1.5
UNIT
Volts
Amps
UNIT
Volts
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
Characteristic
Reverse Recovery Time, I Reverse Recovery Time TJ = 25°C
= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C
I
F
Forward Recovery Time TJ = 25°C
= 60A, diF/dt = 480A/µs, VR = 350V TJ = 100°C
I
F
Reverse Recovery Current TJ = 25°C
= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C
I
F
Recovery Charge T IF = 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C Forward Recovery Voltage T
= 60A, diF/dt = 480A/µs, VR = 350V TJ = 100°C
I
F
Rate of Fall of Recovery Current TJ = 25°C
= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C
I
F
PRELIMINARY
= 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C
F
= 25°C
J
= 25°C
J
MIN TYP MAX
55 70 70
90 160 160
10 17
20 30 350 900
6
6 800 500
UNIT
ns
Amps
nC
Volts
A/µs
052-6253 Rev A
Page 6
200
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
160
2500
2000
APT50GF60B2RD/LRD
TJ=100°C VR=350V
120
80
, FORWARD CURRENT
F
40
0
0 0.5 1.0 1.5 2.0 2.5 10 50 100 500 1000
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)
TJ = 150°C
TJ = 100°C
TJ = 25°C
= -55°C
T
J
1500
1000
500
, REVERSE RECOVERY CHARGE
rr
0
120A
60A
30A
Figure 1, Forward Voltage Drop vs Forward Current Figure 2, Reverse Recovery Charge vs Current Slew Rate
50
TJ=100°C
VR=350V
40
120A
60A
30
2.0
1.6
1.2
Q
rr
t
rr
30A
t
RRM
rr
Q
rr
, REVERSE RECOVERY CURRENT I
RRM
20
10
0
0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150
diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)
0.8
, DYNAMIC PARAMETERS Q
f
0.4
0.0
I
Figure 3, Reverse Recovery Current vs Current Slew Rate Figure 4, Dynamic Parameters vs Junction Temperature
200
160
120
TJ=100°C VR=350V
120A
60A
30A
1200
1000
800
600
TJ=100°C VR=350V
IF=60A
V
fr
15.0
12.5
10.0
7.5
80
PRELIMINARY
40
, REVERSE RECOVERY TIME I
rr
0
0 200 400 600 800 1000 0 200 400 600 800 1000
/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)
di
Figure 5, Reverse Recovery Time vs Current Slew Rate Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
F
400
(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)
, FORWARD RECOVERY TIME K
200
fr
t
0
T
fr
5.0
2.5
0
0.7
0.5
D=0.5
(VOLTS)
, FORWARD RECOVERY VOLTAGE
fr
V
052-6253 Rev A
0.2
0.1
0.05
(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)
0.01
, THERMAL IMPEDANCE t
0.005
ΘJC
Z
0.001
-5
10
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
-3
10
V
RECTANGULAR PULSE DURATION (SECONDS)
, REVERSE VOLTAGE (VOLTS)
R
-2
10
-1
10
1.0 10
Page 7
30µH
APT50GF60B2RD/LRD
V
r
D.U.T.
t
Q
/
rr
rr
Waveform
+15v
diF/dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
- Forward Conduction Current
I
F
di
2
/dt - Current Slew Rate, Rate of Forward
F
Current Change Through Zero Crossing.
1
Zero
3
4
5 6
- Peak Reverse Recovery Current.
I
RRM
trr - Reverse Recovery Time Measured from Point of I
Current Falling Through Zero to a Tangent Line
Extrapolated Through Zero Defined by 0.75 and 0.50 I
Qrr - Area Under the Curve Defined by I
PRELIMINARY
diM/dt - Maximum Rate of Current Change During the Trailing Portion of t
PRELIMINARY
Figure 8, Diode Reverse Recovery Waveform and Definitions
RRM
and trr.
F
6
{
diM/dt
RRM
.
TRANSFORMER
}
PEARSON 411
CURRENT
2
rr.
4
6
5
3
Q
rr
= 1/
0.75 I
2
(
0.5 I
RRM
t
rr
.
RRM
I
RRM
)
Collector
(Cathode)
052-6253 Rev A
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
4.50
(.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC 2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate Collector
(Cathode) Emitter
(Anode)
Collector
(Cathode)
TO-264 Package OutlineT-MAX™ Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC 2-Plcs.
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate Collector
(Cathode) Emitter
(Anode)
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