Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (VGE = ±20V, V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
= VGE, IC = 700µA, Tj = 25°C)
CE
= V
CE
CES
CES
APT Website - http://www.advancedpower.com
= 0V, IC = 0.50mA)
GE
, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)
= 0V)
CE
2
2
MINTYPMAX
600
4.55.56.5
2.12.7
2.22.8
0.50
TBD
±100
UNIT
Volts
mA
nA
052-6253 Rev A
Page 2
DYNAMIC CHARACTERISTICS (IGBT)APT50GF60B2RD/LRD
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
4
Turn-off Switching Energy
Total Switching Losses
4
Turn-on Delay Time
Rise Time
PRELIMINARY
Turn-off Delay Time
Fall Time
Total Switching Losses
4
Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= .8V
CC
CES
I
= I
C
C2
RG = 10Ω
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
= 15V
GE
I
= I
C
C2
R
= 10Ω
G
T
= +150°C
J
Inductive Switching (25
V
(Peak) = 0.66V
CLAMP
V
= 15V
GE
I
= I
C
C2
R
= 10Ω
G
T
= +25°C
J
V
= 20V, I
CE
CES
°C)
CES
= I
C
C2
MINTYPMAX
26003600
475710
165250
170225
2545
100140
20
100
160
200
3050
90135
290435
170340
2.2
2.4
4.6
30
90
260
100
4.3
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
R
ΘJC
R
ΘJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
052-6253 Rev A
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
T
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
405 S.W. Columbia StreetBend, Oregon 97702-1035Phone: (541) 382-8028FAX: (541) 388-0364
052-6253 Rev A
Page 5
APT50GF60B2RD/LRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED)All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
V
RRM
V
RWM
IF(AV)
I
(RMS)
F
I
FSM
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
R
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
= 85°C, Duty Cycle = 0.5)
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Symbol
V
Characteristic / Test Conditions
Maximum Forward VoltageI
F
I
F
F
IF = 60A, TJ = 150°C
= 60A
= 120A
APT50GF60B2RD/LRD
600
60
100
600
MINTYPMAX
1.8
1.75
1.5
UNIT
Volts
Amps
UNIT
Volts
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
Characteristic
Reverse Recovery Time, I
Reverse Recovery TimeTJ = 25°C