Datasheet APT50GF60LRD, APT50GF60B2RD Datasheet (Advanced Power Technology APT)

APT50GF60B2RD

APT50GF60LRD

600V 80A

APT50GF60B2RD

Fast IGBT & FRED

The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-

T-Max

(B2RD)

™

TO-264

(LRD)

Punch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior

ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

G

C

E

G

C

APT50GF60LRD

E

C

• Low Tail Current • Ultra Low Leakage Current

• RBSOA and SCSOA Rated

• Ultrafast Soft Recovery Antiparallel Diode

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

I

C1

I

C2

I

CM1

I

CM2

P

TJ,T

T

Parameter

Collector-Emitter Voltage Collector-Gate Voltage (R Gate-Emitter Voltage

GE

Continuous Collector Current @ T Continuous Collector Current @ T Pulsed Collector Current Pulsed Collector Current Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KΩ)

GE

= 25°C

C

= 90°C

C

1

@ TC = 25°C

1

@ TC = 90°C

G

E

APT50GF60B2RD/LRD

600 600 ±20

80

50 160 100 300

-55 to 150 300

UNIT

Volts

Amps

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 5792 15 15 FAX: (33) 556 47 97 61

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C) Collector Cut-off Current (V Collector Cut-off Current (VCE = V Gate-Emitter Leakage Current (VGE = ±20V, V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

APT Website - http://www.advancedpower.com

= 0V, IC = 0.50mA)

GE

, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 125°C)

= 0V)

CE

2

MIN TYP MAX

600

4.5 5.5 6.5

2.1 2.7

2.2 2.8

0.50

TBD

±100

UNIT

Volts

mA

nA

052-6253 Rev A

DYNAMIC CHARACTERISTICS (IGBT) APT50GF60B2RD/LRD

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy

4

Turn-off Switching Energy Total Switching Losses

4

Turn-on Delay Time Rise Time

PRELIMINARY

Turn-off Delay Time Fall Time Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= .8V

CC

CES

I

= I

C

C2

RG = 10Ω

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +150°C

J

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +25°C

J

V

= 20V, I

CE

CES

°C)

CES

= I

C

C2

MIN TYP MAX

2600 3600

475 710 165 250

170 225

25 45

100 140

20 100 160 200

30 50

90 135 290 435 170 340

2.2

2.4

4.6 30 90

260 100

4.3

6

UNIT

pF

nC

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Leakages include the FRED and IGBT.

3

See MIL-STD-750 Method 3471

4

Switching losses include the FRED and IGBT.

052-6253 Rev A

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient

Package Weight

T

Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

MIN TYP MAX

0.42

0.66 40

0.22

6.1 10

1.1

UNIT

°C/W

oz

gm lb•in N•m

APT50GF60B2RD/LRD

PRELIMINARY

Power dissipation

P

= ƒ(

T

tot

parameter:

P

tot

)

C

≤

150 °C

T

j

320

W

240

200

160

120

80

40

0

0 20 40 60 80 100 120 °C 160

Collector current

I

= ƒ(

T

C

parameter:

I

C

T

C

)

C

≥

15 V ,

V

GE

80

A

60

50

40

30

20

10

0

0 20 40 60 80 100 120 °C 160

T

j

≤

150 °C

T

C

Safe operating area

I

= ƒ(

V

10

A

)

CE

D

= 0

, T

C

3

2

1

0

-1

10

0

10

1

C

parameter:

I

C

= 25°C ,

10

T

2

≤

150 °C

j

t

DC

= 2.9µs

p

10 µs

100 µs

1 ms

10 ms

10 3 V

Transient thermal impedance IGBT

Z

= ƒ(

t

10

-1

-2

-3

0

10

p

-5

)

D = t

/

T

p

single pulse

-4

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

10

-2

10

-1

10 0 s

t

p

th JC

parameter:

K/W

Z

thJC

V

CE

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)557 92 15 15 FAX: (33) 55647 97 61

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

052-6253 Rev A

APT50GF60B2RD/LRD

PRELIMINARY

Typ. output characteristics

I

=

f (V

C

parameter:

I

C

)

CE

t

= 80 µs,

p

100

A

17V 15V

80

13V 11V 9V

70

7V

60

50

40

30

20

10

0

0 1 2 3 V 5

T

= 25 °C

j

Typ. output characteristics

IC = f (V

parameter:

I

C

V

CE

)

CE

t

= 80 µs,

p

100

A

17V

80

70

60

50

40

30

20

10

15V 13V 11V 9V 7V

0

0 1 2 3 V 5

T

= 125 °C

j

V

CE

Short circuit safe operating area

I

=

f (V

) ,

T

Csc

parameter:

10

I

Csc/IC2

Csc

/

I

C(90°C)

6

4

2

0

0 100 200 300 400 500 600 V 800

CE

j

V

= ± 15 V,

GE

= 150°C

t

≤ 10 µs, L < 50 nH

sc

Reverse biased safe operating area

I

= f (VCE) ,

Cpuls

parameter:

2.5

I

Cpulse/IC1

Cpuls

V

CE

/

I

C

1.5

1.0

0.5

0.0 0 100 200 300 400 500 600 V 800

V

GE

T

= 150°C

j

= 15 V

V

CE

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 557 92 15 15 FAX: (33) 556 47 97 61

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

052-6253 Rev A

APT50GF60B2RD/LRD

ULTRAFAST SOFT RECOVERY PARALLEL DIODE

MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

RRM

V

RWM

IF(AV)

I

(RMS)

F

I

FSM

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

R

Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T RMS Forward Current Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

= 85°C, Duty Cycle = 0.5)

C

STATIC ELECTRICAL CHARACTERISTICS (FRED)

Symbol

V

Characteristic / Test Conditions

Maximum Forward Voltage I

F

I

F

IF = 60A, TJ = 150°C

= 60A = 120A

APT50GF60B2RD/LRD

600

60 100 600

MIN TYP MAX

1.8

1.75

1.5

UNIT

Volts

Amps

UNIT

Volts

DYNAMIC CHARACTERISTICS (FRED)

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I Reverse Recovery Time TJ = 25°C

= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C

I

F

Forward Recovery Time TJ = 25°C

= 60A, diF/dt = 480A/µs, VR = 350V TJ = 100°C

I

F

Reverse Recovery Current TJ = 25°C

= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C

I

F

Recovery Charge T IF = 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C Forward Recovery Voltage T

= 60A, diF/dt = 480A/µs, VR = 350V TJ = 100°C

I

F

Rate of Fall of Recovery Current TJ = 25°C

= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C

I

F

PRELIMINARY

= 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C

F

= 25°C

J

= 25°C

J

MIN TYP MAX

55 70 70

90 160 160

10 17

20 30 350 900

6

6 800 500

UNIT

ns

Amps

nC

Volts

A/µs

052-6253 Rev A

200

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

160

2500

2000

APT50GF60B2RD/LRD

TJ=100°C VR=350V

120

80

, FORWARD CURRENT

F

40

0

0 0.5 1.0 1.5 2.0 2.5 10 50 100 500 1000

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

TJ = 150°C

TJ = 100°C

TJ = 25°C

= -55°C

T

J

1500

1000

500

, REVERSE RECOVERY CHARGE

rr

0

120A

60A

30A

Figure 1, Forward Voltage Drop vs Forward Current Figure 2, Reverse Recovery Charge vs Current Slew Rate

50

TJ=100°C

VR=350V

40

120A

60A

30

2.0

1.6

1.2

Q

rr

t

rr

30A

t

RRM

rr

Q

rr

, REVERSE RECOVERY CURRENT I

RRM

20

10

0

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

0.8

, DYNAMIC PARAMETERS Q

f

0.4

0.0

I

Figure 3, Reverse Recovery Current vs Current Slew Rate Figure 4, Dynamic Parameters vs Junction Temperature

200

160

120

TJ=100°C VR=350V

120A

60A

30A

1200

1000

800

600

TJ=100°C VR=350V

IF=60A

V

fr

15.0

12.5

10.0

7.5

80

PRELIMINARY

40

, REVERSE RECOVERY TIME I

rr

0

0 200 400 600 800 1000 0 200 400 600 800 1000

/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

di

Figure 5, Reverse Recovery Time vs Current Slew Rate Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate

F

400

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

, FORWARD RECOVERY TIME K

200

fr

t

0

T

fr

5.0

2.5

0

0.7

0.5

D=0.5

(VOLTS)

, FORWARD RECOVERY VOLTAGE

fr

V

052-6253 Rev A

0.2

0.1

0.05

(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)

0.01

, THERMAL IMPEDANCE t

0.005

ΘJC

Z

0.001

-5

10

Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

-3

10

V

RECTANGULAR PULSE DURATION (SECONDS)

, REVERSE VOLTAGE (VOLTS)

R

-2

10

-1

10

1.0 10

30µH

APT50GF60B2RD/LRD

V

r

D.U.T.

t

Q

/

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 25, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

di

2

/dt - Current Slew Rate, Rate of Forward

F

Current Change Through Zero Crossing.

1

Zero

3

4

5 6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line

Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

PRELIMINARY

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

PRELIMINARY

Figure 8, Diode Reverse Recovery Waveform and Definitions

RRM

and trr.

F

6

{

diM/dt

RRM

.

TRANSFORMER

}

PEARSON 411

CURRENT

2

rr.

4

6

5

3

Q

rr

= 1/

0.75 I

2

(

0.5 I

RRM

t

rr

.

RRM

I

RRM

)

Collector

(Cathode)

052-6253 Rev A

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

21.46 (.845)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

2.21 (.087)

2.59 (.102)

4.50

(.177) Max.

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC 2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Collector

(Cathode) Emitter

(Anode)

Collector

(Cathode)

TO-264 Package OutlineT-MAX™ Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

25.48 (1.003)

26.49 (1.043)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)

5.79 (.228)

6.20 (.244)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC 2-Plcs.

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate Collector

(Cathode) Emitter

(Anode)