Datasheet APT50GF120JRD Datasheet (Advanced Power Technology APT)

APT50GF120JRD

1200V 75A

C

®

E

SOT-227

"UL Recognized"

C

Fast IGBT & FRED

The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non­Punch Through Technology the Fast IGBT™ combined with an APT free­wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

E

G

ISOTOP

• Low Tail Current • Ultra Low Leakage Current

• RBSOA and SCSOA Rated

• Ultrafast Soft Recovery Antiparallel Diode

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

I

C1

I

C2

I

CM1

I

CM2

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage

GE

Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KΩ)

GE

= 25°C

C

= 90°C

C

1

@ TC = 25°C

1

@ TC = 90°C

G

APT50GF120JRD

1200
1200

±20

75

50
150
100
460

-55 to 150
300

E

UNIT

Volts

Amps

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (VGE = ±20V, V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

CES

APT Website - http://www.advancedpower.com

= 0V, IC = 1.0mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= 0V)

CE

2

2

MIN TYP MAX

1200

4.5 5.5 6.5

2.9 3.4

3.5 4.1

1.0

TBD

±100

UNIT

Volts

mA

nA

052-6257 Rev A

DYNAMIC CHARACTERISTICS (IGBT) APT50GF120JRD

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy

4

Turn-off Switching Energy
Total Switching Losses

4

Turn-on Delay Time
Rise Time

PRELIMINARY

Turn-off Delay Time
Fall Time
Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

RG = 5Ω

Inductive Switching (150°C)

V

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

GE

I

R

T

= +150°C

J

(Peak) = 0.66V

CLAMP

V

GE

I

R

T

J

VCE = 20V, I

= 15V

= I

C

C2

= 5Ω

G

= 15V

= I

C

C2

= 5Ω

G

= +25°C

CES

°C)

CES

= I

C

C2

MIN TYP MAX

5500 7400

650 910
330 500

525

45

310

50
160
300
190

45
110
600
150

7

8
15
45

110
500

55

12.5

6

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Leakages include the FRED and IGBT.

3

See MIL-STD-750 Method 3471

4

Switching losses include the FRED and IGBT.

052-6257 Rev A

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient

Package Weight

T

Mounting Torque (

Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)

MIN TYP MAX

0.24

0.66
20

1.03

29.2
10

1.1

UNIT

°C/W

oz

gm
lb•in
N•m

APT50GF120JRD

ULTRAFAST SOFT RECOVERY PARALLEL DIODE

MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

V

RRM

V

RWM

IF(AV)

(RMS)

I

F

I

FSM

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

R

Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)

= 60°C, Duty Cycle = 0.5)

C

STATIC ELECTRICAL CHARACTERISTICS (FRED)

Symbol

V

Characteristic / Test Conditions

Maximum Forward Voltage I

F

IF = 60A

F

IF = 60A, TJ = 150°C

= 120A

APT50GF120JRD

1200

60
100
540

MIN TYP MAX

2.5

2.0

2.0

UNIT

Volts

Amps

UNIT

Volts

DYNAMIC CHARACTERISTICS (FRED)

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I
Reverse Recovery Time TJ = 25°C

= 60A, diF/dt = -480A/µs, VR = 650V TJ = 100°C

I

F

Forward Recovery Time TJ = 25°C

= 60A, diF/dt = 480A/µs, VR = 650V TJ = 100°C

I

F

Reverse Recovery Current T
I

= 60A, diF/dt = -480A/µs, VR = 650V TJ = 100°C

F

Recovery Charge T
I

= 60A, diF/dt = -480A/µs, VR = 650V TJ = 100°C

F

Forward Recovery Voltage T

= 60A, diF/dt = 480A/µs, VR = 650V TJ = 100°C

I

F

Rate of Fall of Recovery Current T
I

= 60A, diF/dt = -480A/µs, VR =650V TJ = 100°C

F

PRELIMINARY

= 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C

F

= 25°C

J

= 25°C

J

= 25°C

J

= 25°C

J

MIN TYP MAX

70 85

70
130
170
170

18 30

29 40
630

1820

12

12
900
600

UNIT

ns

Amps

nC

Volts

A/µs

052-6257 Rev A

30µH

APT50GF120JRD

V

r

D.U.T.

t

Q

/

rr

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 25, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

di

2

/dt - Current Slew Rate, Rate of Forward

F

Current Change Through Zero Crossing.

1

Zero

3

4

5
6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line
Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

PRELIMINARY

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

PRELIMINARY

Figure 8, Diode Reverse Recovery Waveform and Definitions

RRM

and trr.

F

6

{

diM/dt

RRM

}

.

PEARSON 411

CURRENT

TRANSFORMER

3

2

rr.

4

6

5

0.5 I

RRM

0.75 I

RRM

Q

rr

= 1/

t

I

(

rr

2

)

RRM

.

r = 4.0 (.157)
(2 places)

052-6257 Rev A

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

8.9 (.350)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Emitter Collector

* Emitter

Dimensions in Millimeters and (Inches)

9.6 (.378)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

0.75 (.030)

0.85 (.033)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)