Datasheet APT5030BN, APT5025BN Datasheet (Advanced Power Technology APT)

Page 1
D
G
S
TO-247
APT5025BN 500V 23.0A 0.25 APT5030BN 500V 21.0A 0.30
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
I
V
TJ,T
DSS
I
D
DM
GS
D
STG
T
L
Parameter
Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
®
= 25°C unless otherwise specified.
C
APT APT
5025BN 5030BN
500 500
= 25°C
C
1
23 21 92 84
±30
= 25°C
C
310
2.48
-55 to 150 300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current (V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
2
Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V
= VGS, ID = 1.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT5025BN
500
APT5030BN 500 APT5025BN 23 APT5030BN 21 APT5025BN 0.25 APT5030BN 0.30
250 1000 ±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
UNIT
0.40
°C/W
40
050-5007 Rev C
Page 2
DYNAMIC CHARACTERISTICS
APT5025/5030BN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 1.8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
t
Characteristic / Test Conditions / Part Number
Continuous Source Current
S
(Body Diode) Pulsed Source Current
1
(Body Diode)
2
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
Q
MIN TYP MAX
GS
= 0V
2380 2950
522 730 196 290
= 10V
DSS
83 130
12.6 19 51 76
= 15V
DSS
14 28 27 55 61 92 36 71
MIN TYP MAX
APT5025BN APT5030BN 21 APT5025BN 92 APT5030BN 84
320 640
5.5 11
23
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1 SOA2
I
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5007 Rev C
Characteristic
Safe Operating Area Safe Operating Area
Inductive Current Clamped
LM
1.0
0.5 D=0.5
0.2
0.1
0.05
0.02
0.01
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.1
0.05
0.01
0.005
0.001 10
SINGLE PULSE
-4
10
Test Conditions / Part Number
V
= 0.4 V
DS
= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
I
DS
, IDS = PD / 0.4 V
DSS
, t = 1 Sec.
DSS
APT5025BN 92 APT5030BN 84
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
10
MIN TYP MAX
310 310
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
1.0 10
UNIT
Watts
Amps
t
1
t
2
t
1
/
t
2
+ T
θJC
C
Page 3
APT5025/5030BN
20
VGS=10V
16
6V
10
VGS=10V
8
6V
5.5V
12
5.5V
8
6
5V
4
5V
4
, DRAIN CURRENT (AMPERES)
D
0
0 50 100 150 200 250 0 1 2 3 4 5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
4.5V 4V
2
, DRAIN CURRENT (AMPERES)
D
0
4.5V
4V
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
20
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
15
TJ = -55°C
TJ = +25°C
TJ = +125°C
10
5
, DRAIN CURRENT (AMPERES) I
D
0
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R
TJ = +125°C
TJ = +25°C
0 2 4 6 8 10 0 10 20 30 40 50 V
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
GS
TJ = -55°C
24
2.50
2.00
1.50
TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
VGS=10V
1.00
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
DS
0.50
(ON) vs DRAIN CURRENT
DS
1.2
VGS=20V
20
16
APT5030BN
APT5025BN
1.1
1.0
12
0.9
8
, DRAIN CURRENT (AMPERES) I
4
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.8
(ON), DRAIN-TO-SOURCE BREAKDOWN R
DSS
0.7
1.4
1.2
1.0
0.8
(NORMALIZED) VOLTAGE (NORMALIZED)
(TH), THRESHOLD VOLTAGE BV
0.6
GS
V
0.4
050-5007 Rev C
Page 4
100
10
APT5025BN APT5030BN
OPERATION HERE
LIMITED BY R
APT5025BN APT5030BN
10µS
(ON)
DS
100µS
1mS
10,000
5,000
1,000
500
10mS
1
TC =+25°C TJ =+150°C
, DRAIN CURRENT (AMPERES)
D
SINGLE PULSE
.1
1 5 10 50 100 500 1000 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100mS DC
APT5025/5030BN
100
50
10
APT5025/5030BN
C
iss
C
oss
C
rss
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
ID = ID [Cont.]
VDS=100V
VDS=250V
VDS=400V
100
50
20
T
=+150°C T
J
=+25°C
J
10
8
5
4
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
GS
V
0
0 40 80 120 160 200 0 0.5 1.0 1.5 2.0
Q
, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
g
2
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
DR
1
I
TO-247AD Package Outline
4.69 (.185)
Drain
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.79 (.031)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate Drain Source
050-5007 Rev C
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Loading...