Datasheet APT5030BN, APT5025BN Datasheet (Advanced Power Technology APT)

D

G

S

TO-247

APT5025BN 500V 23.0A 0.25Ω APT5030BN 500V 21.0A 0.30Ω

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

I

V

P

TJ,T

DSS

I

D

DM

GS

D

STG

T

L

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

®

= 25°C unless otherwise specified.

C

APT APT

5025BN 5030BN

500 500

= 25°C

C

1

23 21 92 84

±30

= 25°C

C

310

2.48

-55 to 150 300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current (V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])

2

Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V

= VGS, ID = 1.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT5025BN

500

APT5030BN 500 APT5025BN 23 APT5030BN 21 APT5025BN 0.25 APT5030BN 0.30

250 1000 ±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

UNIT

0.40

°C/W

40

050-5007 Rev C

DYNAMIC CHARACTERISTICS

APT5025/5030BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

t

Characteristic / Test Conditions / Part Number

Continuous Source Current

S

(Body Diode) Pulsed Source Current

1

(Body Diode)

2

Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

Q

MIN TYP MAX

GS

= 0V

2380 2950

522 730 196 290

= 10V

DSS

83 130

12.6 19 51 76

= 15V

DSS

14 28 27 55 61 92 36 71

MIN TYP MAX

APT5025BN APT5030BN 21 APT5025BN 92 APT5030BN 84

320 640

5.5 11

23

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1 SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-5007 Rev C

Characteristic

Safe Operating Area Safe Operating Area

Inductive Current Clamped

LM

1.0

0.5 D=0.5

0.2

0.1

0.05

0.02

0.01

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.1

0.05

0.01

0.005

0.001 10

SINGLE PULSE

-4

10

Test Conditions / Part Number

V

= 0.4 V

DS

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

I

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT5025BN 92 APT5030BN 84

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

MIN TYP MAX

310 310

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

1.0 10

UNIT

Watts

Amps

t

1

t

2

t

1

/

t

2

+ T

θJC

C

APT5025/5030BN

20

VGS=10V

16

6V

10

VGS=10V

8

6V

5.5V

12

5.5V

8

6

5V

4

5V

4

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 0 1 2 3 4 5

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4.5V 4V

2

, DRAIN CURRENT (AMPERES)

D

0

4.5V

4V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

20

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

15

TJ = -55°C

TJ = +25°C

TJ = +125°C

10

5

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +125°C

TJ = +25°C

0 2 4 6 8 10 0 10 20 30 40 50 V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

24

2.50

2.00

1.50

TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

1.00

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

DS

0.50

(ON) vs DRAIN CURRENT

DS

1.2

VGS=20V

20

16

APT5030BN

APT5025BN

1.1

1.0

12

0.9

8

, DRAIN CURRENT (AMPERES) I

4

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

050-5007 Rev C

100

10

APT5025BN APT5030BN

OPERATION HERE

LIMITED BY R

APT5025BN APT5030BN

10µS

(ON)

DS

100µS

1mS

10,000

5,000

1,000

500

10mS

1

TC =+25°C TJ =+150°C

, DRAIN CURRENT (AMPERES)

D

SINGLE PULSE

.1

1 5 10 50 100 500 1000 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100mS DC

APT5025/5030BN

100

50

10

APT5025/5030BN

C

iss

C

oss

C

rss

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

ID = ID [Cont.]

VDS=100V

VDS=250V

VDS=400V

100

50

20

T

=+150°C T

J

=+25°C

J

10

8

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 40 80 120 160 200 0 0.5 1.0 1.5 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

2

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

TO-247AD Package Outline

4.69 (.185)

Drain

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Drain Source

050-5007 Rev C

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC 2-Plcs.

Dimensions in Millimeters and (Inches)