Datasheet APT5020SVFR Datasheet (Advanced Power Technology APT)

APT5020SVFR

500V 26A 0.200Ω

POWER MOS V

®

FREDFET

D3PAK

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

3

• Lower Leakage • Surface Mount D

PAK Package

G

D

FREDFET

• Faster Switching

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1

Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

(Repetitive and Non-Repetitive)

1

4

APT5020SVFR

500

26

104

±30
±40

300

2.4

-55 to 150
300

26
30

1300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

500

26

24

0.20
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5569 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT5020SVFR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

5

MIN TYP MAX

GS

= 0V

3700 4440

510 715
200 300
150 225

DSS

25 37
70 105

= 15V

DSS

12 25
10 20
50 75

815

MIN TYP MAX

T

= 25°C 250

j

T

= 125°C 500

j

T

= 25°C 1.3

j

T

= 125°C 4.5

j

T

= 25°C 12

j

T

= 125°C 18

j

26

104

1.3
5

UNIT

pF

nC

ns

UNIT

Amps

Volts

V/ns

ns

µC

Amps

050-5569 Rev B

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

5

IS ≤ -ID [Cont.],

+25°C, L = 3.85mH, R

j

=

di

VR = 200V.

D=0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

10

/

= 100A/µs, V

dt

-1

MIN TYP MAX

0.42
40

25Ω, Peak IL = 26A

G

=

V

, T

DD

DSS

≤

1.0 10

150°C, R

j

≤

UNIT

°C/W

= 2.0Ω,

G

APT5020SVFR

50

40

30

VGS=6V, 7V, 10V & 15V

5.5V

50

40

VGS=7V & 10V

VGS=15V

6V

5.5V

30

20

10

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 0 2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5V

4.5V

4V

20

10

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

50

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

40

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +125°C

30

20

10

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

02468 020406080

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

30

1.8

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.6

1.4

1.2

VGS=10V

VGS=20V

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.15

5V

4.5V

4V

25

1.10

20

1.05

15

1.00

10

, DRAIN CURRENT (AMPERES) I

5

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5569 Rev B

200
100

50

OPERATION HERE

LIMITED BY RDS (ON)

10µS
100µS

20,000

10,000

5,000

APT5020SVFR

C

iss

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TJ =+150°C
SINGLE PULSE

.1

1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

0

0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

VDS=100V

VDS=250V

VDS=400V

1mS

10mS

100mS
DC

1,000

500

100

200

100

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

T

=+150°C T

J

C

C

=+25°C

J

oss

rss

Drain

(Heat Sink)

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

0.46 (.018)

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

{3 Plcs}

1.22 (.048)

1.32 (.052)

D3PAK Package Outline

15.95 (.628)

16.05 (.632)

1.04 (.041)

1.15 (.045)

Revised

4/18/95

13.79 (.543)

13.99 (.551)

1.27 (.050)

1.40 (.055)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC
{2 Plcs.}

Source

Drain

Gate

Dimensions in Millimeters (Inches)

13.41 (.528)

13.51 (.532)

Revised
8/29/97

3.81 (.150)

4.06 (.160)
(Base of Lead)

Heat Sink (Drain)
and Leads
are Plated

11.51 (.453)

11.61 (.457)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5569 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058