Datasheet APT5010LVR Datasheet (Advanced Power Technology APT)

APT5010LVR

500V 47A 0.100Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout..

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-264 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

1

= 25°C

C

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

TO-264

G

APT5010LVR

500

47

188

±30
±40

520

4.16

-55 to 150
300

47
50

2500

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

500

47

24

0.100
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5536 Rev C

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT5010LVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

7400 8900
1000 1400

380 570
312 470

50 75

127 190

14 30
16 32
54 80

510

MIN TYP MAX

47

188

1.3

620

14.7

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5536 Rev C

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

θJA

0.3

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

-3

-2

10

+25°C, L = 2.26mH, R

j

=

-1

10

MIN TYP MAX

0.24
40

25Ω, Peak IL = 47A

G

=

1.0 10

UNIT

°C/W

APT5010LVR

100

80

VGS=7V, 8V, 10V & 15V

6V

100

80

VGS=7V, 8V & 10V

VGS=15V

6V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

050100150200250 024681012
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5.5V

5V

4.5V
4V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

5.5V

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

80

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

60

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +25°C

TJ = +125°C

40

20

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

02468 020406080100120

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

50

1.5

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.4

1.3

1.2
VGS=10V

1.1

VGS=20V

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

5V

4V

40

30

20

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

1.10

1.05

1.00

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5536 Rev C

200

OPERATION HERE

100

LIMITED BY RDS (ON)

50

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS
100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

500

APT5010LVR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

ID = ID [Cont.]

VDS=100V

VDS=250V

200

100

T

=+150°C T

50

J

=+25°C

J

12

VDS=400V

8

10

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-264 Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

Drain

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5536 Rev C

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2.29 (.090)

2.69 (.106)

Gate
Drain
Source