Datasheet APT5010LLC Datasheet (Advanced Power Technology APT)

APT5010B2LC

APT5010LLC

500V 47A 0.100W

POWER MOS VI

TM

Power MOS VITM is a new generation of low gate charge, high voltage

B2LC

T-MAX™

TO-264

N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C

. Lower gate charge coupled with Power MOS VITM optimized gate

C

rss

layout, delivers exceptionally fast switching speeds.

• Identical Specifications:

T-MAX™ or TO-264 Package

• Lower Gate Charge & Capacitance • Easier To Drive

• 100% Avalanche Tested • Faster switching

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

iss

and

G

-55 to 150

D

S

APT5010

500

47
188
±30
±40
520

4.16

300

47

50

2500

LLC

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

500

47

35

0.100
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5900 Rev A 8-2000

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

DYNAMIC CHARACTERISTICS

APT5010B2LC - LLC

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

GS

VDS = 25V

f = 1 MHz

V

GS

= 0.5 V

V

DD

ID = I

D[Cont.]

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

= -I

S

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

= 10V

@ 25°C

= 15V

@ 25°C

DSS

DSS

MIN TYP MAX

5375 6500
1040 1460

185 280
145 220

34 41
76 120
12 24
15 30
28 42

4.6 10.0

MIN TYP MAX

47

188

1.3

590

13

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5900 Rev A 8-2000

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

0.3

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

-3

-2

10

+25°C, L = 2.26mH, R

j

=

10

MIN TYP MAX

0.24

UNIT

°C/W

40

25W, Peak IL = 47A

G

=

-1

1.0 10

APT5010B2LC - LLC

100

80

VGS= 8V, 10V & 15V

7.5V

60

7V

40

6.5V

20

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 0246810121416
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6V

5.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

160

140

120

VDS> ID (ON) x RDS (ON)MAX.

100

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

80

TJ = -55°C

TJ = +25°C

TJ = +125°C

60

TJ = +125°C

40

, DRAIN CURRENT (AMPERES) I

D

20

TJ = +25°C

TJ = -55°C

0

0 2 4 6 8 10 0 20 40 60 80 100

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

50

100

VGS= 10V & 15V

80

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

1.5

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.4

1.3

1.2
VGS=10V

1.1

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

8V

7.5V

7V

6.5V

6V

5.5V

VGS=20V

40

30

20

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

T

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

1.10

1.05

1.00

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5900 Rev A 8-2000

200

100

50

10

OPERATION HERE

LIMITED BY R

20,000

APT5010B2LC - LLC

(ON)

DS

100µS

1mS

10,000

5,000

1,000

C

iss

C

oss

5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

1

1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

10mS

500

100

C

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FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

ID = ID [Cont.]

VDS=100V

VDS=250V

200

100

T

=+150°C T

50

J

=+25°C

J

12

VDS=400V

8

10

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 50 100 150 200 250 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

Drain

T-MAXTM (B2) Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain

Drain

TO-264 (L) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

25.48 (1.003)

26.49 (1.043)

19.81 (.780)

21.39 (.842)

Source

0.48 (.019)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC
2-Plcs.

0.84 (.033)

2.59 (.102)

3.00 (.118)

These dimensions are equal to the TO-247 without the mounting hole.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5900 Rev A 8-2000

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

Dimensions in Millimeters and (Inches)

5.79 (.228)

6.20 (.244)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Drain
Source