Datasheet APT5010JVRU3 Datasheet (Advanced Power Technology APT)

APT5010JVRU3

SOT-227

G

S

A

D

ISOTOP

®

"UL Recognized"

500V 44A 0.100Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

• Single Die MOSFET & FRED • PFC "Buck" Configuration

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

®

G

APT5010JVRU3

500

44

176

±30
±40

450

3.6

-55 to 150
300

44
50

2500

D

A

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

2

(V

DS

> I

= 0V, ID = 250µA)

GS

x R

D(on)

2

DS(on)

(VGS = 10V, 0.5 I

, VGS = 0V)

DSS

= 0.8 V

DS

DSS

Max, VGS = 10V)

)

D[Cont.]

, VGS = 0V, TC = 125°C)
= 0V)

DS

MIN TYP MAX

500

44

24

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

0.100
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5559 Rev A

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT5010JVRU3

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

7410
1050

390
312

37

127

18
16
54

5

MIN TYP MAX

44

176

1.3

620

14.7

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5559 Rev A

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R
R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting T

0.3
D=0.5

, THERMAL IMPEDANCE (°C/W)
Z

JC

θ

0.1

0.05

0.01

0.005

0.001

-5

10

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 2.58mH, R

j

=

-1

10

MIN TYP MAX

0.28
40

2500

13

25Ω, Peak IL = 44A

G

=

1.0 10

UNIT

°C/W

Volts

lb•in

APT5010JVRU3

100

80

VGS=7V, 8V, 10V & 15V

6V

100

80

VGS=7V, 8V & 10V

VGS=15V

6V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

050100150200250 024681012
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5.5V

5V

4.5V
4V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

5.5V

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

80

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

60

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +25°C

TJ = +125°C

1.5

1.4

1.3

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.2

40

1.1

20

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

50

TJ = +125°C

TJ = +25°C

02468 020406080100120

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

VGS=10V

VGS=20V

5V

4V

40

30

20

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

1.10

1.05

1.00

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5559 Rev A

200

OPERATION HERE

100

LIMITED BY RDS (ON)

50

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS

100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

500

APT5010JVRU3

C

iss

C

oss

C

rss

.1

1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=100V

VDS=250V

VDS=400V

100

200

100

T

=+150°C T

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

J

=+25°C

J

Diode Specifications Section

MAXIMUM RATINGS (UltraFast Recovery Diode) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

R

V

RRM

V

RWM

IF(AV)

(RMS)

I

F

I

FSM

TJ,T

STG

T

L

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T

= 80°C, Duty Cycle = 0.5)

C

RMS Forward Current
Non-Repetitive Forward Surge Current (T

= 45°C, 8.3mS)

J

Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

APT5010JVRU3

600

30
60

320

-55 to 150
300

UNIT

Volts

Amps

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

I

RM

C

050-5559 Rev A

Characteristic / Test Conditions

Maximum Forward Voltage I

F

Maximum Reverse Leakage Current VR = VR Rated

Junction Capacitance, V

T

= 200V

R

I

= 30A

F

= 60A

F

IF = 30A, TJ = 150°C

V

= VR Rated, TJ = 125°C

R

MIN TYP MAX

1.8

1.5

1.6
250
500

40

UNIT

Volts

µA

pF

APT5010JVRU3

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

DYNAMIC CHARACTERISTICS

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I

= 1.0A, diF/dt = -15A/µS, VR = 30V, TJ = 25°C

F

Reverse Recovery Time TJ = 25°C

= 30A, diF/dt = -240A/µS, VR = 350V TJ = 100°C

I

F

Forward Recovery Time T
I

= 30A, diF/dt = 240A/µS, VR = 350V TJ = 100°C

F

Reverse Recovery Current T

= 30A, diF/dt = -240A/µS, VR = 350V TJ = 100°C

I

F

Recovery Charge T
I

= 30A, diF/dt = -240A/µS, VR = 350V TJ = 100°C

F

Forward Recovery Voltage T
I

= 30A, diF/dt = 240A/µS, VR = 350V TJ = 100°C

F

Rate of Fall of Recovery Current T

= 30A, diF/dt = -240A/µS, VR = 350V (See Figure 10) TJ = 100°C

I

F

= 25°C

J

= 25°C

J

= 25°C

J

= 25°C

J

= 25°C

J

MIN TYP MAX

50 65
50

80
155
155

410

7.5 15
100
300

5

5
400
200

UNIT

nS

Amps

nC

Volts

A/µS

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

W

0.05

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.01

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance

Package Weight

T

2.0

1.0

0.5

0.1

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

MIN TYP MAX

0.90
20

1.06
30

UNIT

°C/W

oz.

gm.

0.005

-5

10

FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

10

-1

1.0 10

050-5559 Rev A

100

80

60

40

, FORWARD CURRENT

F

20

TJ = 150°C
TJ = 100°C

TJ = 25°C

TJ = -55°C

1600

TJ=100°C

VR=350V

1200

800

400

, REVERSE RECOVERY CHARGE

rr

APT5010JVRU3

60A

30A

15A

0

0 0.5 1.0 1.5 2.0 2.5 10 50 100 500 1000

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

0

Figure 15, Forward Voltage Drop vs Forward Current Figure 16, Reverse Recovery Charge vs Current Slew Rate

2.0

1.6

1.2

t

0.8

, DYNAMIC PARAMETERS Q

f

0.4

I

rr

RRM

Q

rr

t

rr

Q

rr

0.0

, REVERSE RECOVERY CURRENT I

RRM

40

TJ=100°C
VR=350V

60A

30

20

30A

15A

10

0

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

di

/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

F

Figure 17, Reverse Recovery Current vs Current Slew Rate Figure 18, Dynamic Parameters vs Junction Temperature

200

160

TJ=100°C

VR=350V

2500

2000

TJ=100°C
VR=350V

IF=30A

25

20

60A

V

120

30A

1500

fr

15

15A

80

1000

10

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

, REVERSE RECOVERY TIME I

40

rr

0

0 200 400 600 800 1000 0 200 400 600 800 1000

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

500

, FORWARD RECOVERY TIME K

fr

t

t

fr

0

5

0

Figure 19, Reverse Recovery Time vs Current Slew Rate Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate

800

(VOLTS)

, FORWARD RECOVERY VOLTAGE

fr

V

(pico-FARADS) (nano-SECONDS) (AMPERES) (AMPERES)

, JUNCTION CAPACITANCE t

J

C

Figure 21, Junction Capacitance vs Reverse Voltage

050-5559 Rev A

500

100

50

30

0.01 0.05 0.1 0.5 1 5 10 50 100 200
V

, REVERSE VOLTAGE (VOLTS)

R

APT5010JVRU3

30µH

V

r

D.U.T.

t

Q

/

rr

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 22, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

2

/dt - Current Slew Rate, Rate of Forward

di

F

Current Change Through Zero Crossing.

1

Zero

3
4

5
6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line

Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

RRM

and trr.

F

6

{

diM/dt

RRM

.

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

Figure 23, Diode Reverse Recovery Waveform and Definitions

TRANSFORMER

}

PEARSON 411

CURRENT

2

rr.

4

6

5

3

Q

rr

= 1/

0.75 I

2

(

0.5 I

RRM

t

rr

.

RRM

I

RRM

)

r = 4.0 (.157)
(2 places)

SOT-227 (ISOTOP®) Package Outline

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

Dimensions in Millimeters and (Inches)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

Anode Drain

Source

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

0.75 (.030)

0.85 (.033)

Changed 2/10/99

Gate

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

"UL Recognized" File No. E145592

050-5559 Rev A