Datasheet APT5010JVFR Datasheet (Advanced Power Technology APT)

APT5010JVFR

500V 44A 0.100Ω

POWER MOS V

®

FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

S

G

®

ISOTOP

D

®

FREDFET

S

SOT-227

"UL Recognized"

D

• Lower Leakage • Popular SOT-227 Package

G

• Faster Switching

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1

Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

(Repetitive and Non-Repetitive)

1

4

APT5010JVFR

500

44

176

±30
±40

450

3.6

-55 to 150
300

44
50

2500

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

500

44

24

0.100
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5597 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

GS

= 15V

DSS

DSS

APT5010JVFR

MIN TYP MAX

7400 8900
1000 1400

380 570
312 470

50 75

127 190

14 30
16 32
54 80

510

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

5

T

= 25°C 250

j

T

= 125°C 500

j

T

= 25°C 1.6

j

T

= 125°C 5.5

j

T

= 25°C 15

j

T

= 125°C 27

j

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R
R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting T

5

IS ≤ -ID [Cont.],
VR = 200V

0.3
D=0.5

0.1

0.05

0.2

0.1

+25°C, L = 2.58mH, R

j

=

di

/

dt

MIN TYP MAX

MIN TYP MAX

2500

= 100A/µs, V

25Ω, Peak IL = 44A

G

=

V

≤

DSS

, T

DD

176

0.28

150°C, R

j

≤

44

1.3
5

40

13

UNIT

Amps

Volts

V/ns

µC

Amps

UNIT

°C/W

Volts

lb•in

= 2.0Ω,

G

ns

050-5597 Rev B

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001
10

0.02

0.01

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0 10

APT5010JVFR

100

80

VGS=7V, 8V, 10V & 15V

6V

100

80

VGS=7V, 8V & 10V

VGS=15V

6V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

050100150200250 024681012
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5.5V

5V

4.5V
4V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

5.5V

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

80

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

60

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +25°C

TJ = +125°C

40

20

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

02468 020406080100120

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

50

1.5

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.4

1.3

1.2
VGS=10V

1.1

VGS=20V

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

5V

4V

40

30

20

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

1.10

1.05

1.00

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5597 Rev B

200

OPERATION HERE

100

LIMITED BY RDS (ON)

50

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS

100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

500

APT5010JVFR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=100V

VDS=250V

VDS=400V

100

200

100

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

T

=+150°C T

J

=+25°C

J

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

12.2 (.480)

8.9 (.350)

9.6 (.378)
Hex Nut M4

(4 places)

r = 4.0 (.157)

(2 places)

14.9 (.587)

15.1 (.594)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

* Source

Gate

Dimensions in Millimeters and (Inches)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5597 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

25.2 (0.992)

12.6 (.496)

25.4 (1.000)

12.8 (.504)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

"UL Recognized" File No. E145592