Datasheet APT47N60BC3G Specification

APT47N60BC3(G) APT47N60SC3(G)

600V 47A 0.070

Super Junction MOSFET

TO-247

D3PAK

• Ultra Low R

• Low Miller Capacitance

• Ultra Low Gate Charge, Qg

• Avalanche Energy Rated

• Extreme dv/dt Rated

• Popular TO-247 or Surface Mount D3 package.

• RoHS Compliant

DS(ON)

D

G

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁ ed.

Symbol

V

DSS

I

DM

V

GS

V

GSM

P

TJ,T

T

dv

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

D

Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

D

Linear Derating Factor

Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Drain-Source Voltage slope (V

/

dt

Repetitive Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

= 25°C

C

= 480V, ID = 47A, TJ = 125°C)

DS

7

4

APT47N60BC3_SC3(G)

600

47

141

±20

±30

417

3.33

-55 to 150

260

50

20

1

1800

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

V/ns

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

R

DS(on)

I

DSS

I

GSS

V

GS(th)

"COOLMOS™ comprise a new family of transistors developed by Inﬁ neon Technologies AG. "COOLMOS" is a trade- mark of Inﬁ neon Technologies AG."

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGS, ID = 2.7mA)

DS

Microsemi Website - http://www.microsemi.com

= 0V, ID = 250A)

GS

2

(VGS = 10V, ID = 30A)

= 600V, VGS = 0V)

DS

= 600V, VGS = 0V, TJ = 150°C)

DS

= ±20V, V

GS

DS

= 0V)

MIN TYP MAX

600

0.06 0.07

0.5 25

250

±100

2.10 3 3.9

UNIT

Volts

Ohms

A

nA

Volts

050-7144 Rev F 3-2012

DYNAMIC CHARACTERISTICS APT47N60BC3_SC3(G)

Symbol

C

Q

t

d(on)

t

d(off)

E

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller ") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Test Conditions

V

= 0V

GS

= 25V

V

DS

= 1 MHz

f

3

RESISTIVE SWITCHING

6

INDUCTIVE SWITCHING @ 25°C

V

INDUCTIVE SWITCHING @ 125°C

V

= 10V

V

GS

= 300V

V

DD

= 47A @ 25°C

I

D

= 13V

V

GS

= 380V

V

DD

= 47A @ 125°C

I

D

= 1.8

R

G

= 400V, V

DD

= 47A, RG = 5

I

D

= 400V V

DD

= 47A, RG = 5

I

D

GS

= 15V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

dv

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -47A)

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

/

Peak Diode Recovery

dt

= -47A, dlS/dt = 100A/s, VR = 350V)

S

= -47A, dlS/dt = 100A/s, VR = 350V)

S

5

dv

/

dt

MIN TYP MAX

47

141

1.2

580

23

6

THERMAL CHARACTERISTICS

Symbol

R

JC

R

JA

1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471

Microsemi Reserves the right to change, without notice, the speciﬁ cations and information contained

Characteristic

Junction to Case

Junction to Ambient

0.35

4 Starting T

dv

5

/

dt

device itself. I

Eon includes diode reverse recovery. See ﬁ gures 18, 20.

6

+25°C, L = 36.0mH, R

j

=

numbers reﬂ ect the limitations of the test circuit rather than the

≤ -I

47A

S

D

7 Repetitve avalanche causes additional power losses that can be calculated as P

AV=EAR

MIN TYP MAX

7015

2565

210

260

29

110

18

27

110

8

670

980

1100

1200

MIN TYP MAX

0.30

62

25, Peak IL = 10A

G

=

di

/

*f

≤ 700A/s V

dt

≤

R

UNIT

pF

nC

ns

J

UNIT

Amps

Volts

ns

C

V/ns

UNIT

°C/W

V

T

≤ 150°C

DSS

J

0.30

0.25

0.20

0.15

0.10

, THERMAL IMPEDANCE (°C/W)

JC



0.05

Z

0 10 RECTANGULAR PULSE DURATION (SECONDS)

050-7144 Rev F 3-2012

0.9

0.7

0.5

0.3

0.1

0.05

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

-3

10

-2

10

Note:

t

1

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

10

t

2

t

1

t

/

2

θJC + TC

1.0

Typical Performance Curves

180

160

140

120

100

80

60

40

, DRAIN CURRENT (AMPERES)

D

20

0 5 10 15 20 25 30

0

V

FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS

120

100

=15 & 10V

V

GS

6.5V

6V

5.5V

5V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

VDS> ID (ON) x RDS (ON)MAX.

250SEC. PULSE TEST @ <0.5 % DUTY CYCLE

4.5V

4V

1.40

1.30

NORMALIZED TO

V

= 10V @ 23.5A

GS

APT47N60BC3_SC3(G)

80

60

TJ = -55°C

1.20

1.10

VGS=10V

TJ = +25°C

(ON), DRAIN-TO-SOURCE ON RESISTANCE

DS

, DRAIN-TO-SOURCE BREAKDOWN R

DSS

1.00

0.90

0.80

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

VGS=20V

(ON) vs DRAIN CURRENT

DS

40

, DRAIN CURRENT (AMPERES) I

D

20

0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 80 90

V FIGURE 3, TRANSFER CHARACTERISTICS FIGURE 4, R

0

GS

TJ = +125°C

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

50

40

30

20

10

(ON), DRAIN-TO-SOURCE ON RESISTANCE I 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T

FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE

3

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

C

ID = 47A

VGS = 10V

0

DS

2.5

2.0

1.5

1.0

0.5

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T

FIGURE 7, ON-RESISTANCE vs. TEMPERATURE FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE

0

, DRAIN CURRENT (AMPERES) R

D

I

(NORMALIZED)

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

1.0

0.9

0.8

(TH), THRESHOLD VOLTAGE BV

0.7

GS

0.6

(NORMALIZED) VOLTAGE (NORMALIZED)

V

050-7144 Rev F 3-2012

Typical Performance Curves

188

100

OPERATION HERE

LIMITED BY R

(ON)

DS

50

30,000

10,000

1,000

APT47N60BC3_SC3(G)

C

iss

C

oss

10

5

, DRAIN CURRENT (AMPERES)

D

1 10 100 600 0 10 20 30 40 50 V

FIGURE 9, MAXIMUM SAFE OPERATING AREA FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

TC =+25°C TJ =+150°C SINGLE PULSE

1

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

16

ID = 47A

100S

1mS

10mS

100

200

C

rss

10

100

12

TJ =+150°C

VDS= 120V

8

VDS= 300V

VDS= 480V

10

TJ =+25°C

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Q

FIGURE 11, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE

350

300

t

d(off)

250

200

150

100

VDD = 400V

RG = 5

TJ = 125°C L = 100H

(ns)

d(off)

and t

d(on)

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

120

100

80

(ns)

f

60

and t

r

40

1

VDD = 400V

RG = 5

TJ = 125°C L = 100H

t

f

t

r

50

0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 I

0

FIGURE 13, DELAY TIMES vs CURRENT FIGURE 14, RISE AND FALL TIMES vs CURRENT

t

d(on)

(A) ID (A)

D

2500

2000

1500

VDD = 400V

RG = 5

TJ = 125°C

L = 100H

EON includes

diode reverse recovery.

E

off

1000

500

0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 I

SWITCHING ENERGY (J) t

FIGURE 15, SWITCHING ENERGY vs CURRENT FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE

E

on

0

(A) RG, GATE RESISTANCE (Ohms)

D

20

0

4500

VDD = 400V

4000

ID = 47A

TJ = 125°C

3500

L = 100H

EON includes

3000

diode reverse recovery.

2500

2000

1500

1000

E

on

500

0

SWITCHING ENERGY (J) t

E

off

050-7144 Rev F 3-2012

Typical Performance Curves

I

C

D.U.T.

APT30DF60

V

CE

Figure 20, Inductive Switching Test Circuit

V

DD

G

TJ = 125 C

Collector Current

Collector Voltage

5 %

t

r

90%

10%

t

d(on)

5%

10%

Gate Voltage

Switching Energy

T

TJ = 125 C

90%

Gate Voltage

Collector Voltage

Collector Current

0

10%

90%

t

f

t

d(off)

Switching Energy

APT47N60BC3_SC3(G)

Figure 17, Turn-on Switching Waveforms and Deﬁ nitions

Figure 19, Inductive Switching Test Circuit

Figure 18, Turn-off Switching Waveforms and Deﬁ nitions

TO-247 (B) Package Outline

e1 SAC: Tin, Silver, Copper

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

Drai n

0.40 (.016)

1.016(.040)

2.21 (.087)

2.59 (.102)

Dimensions in Millimeters (Inches)

20.80 (.819)

21.46 (.845)

19.81 (.780)

20.32 (.800)

6.15 (.242) BSC

4.50 (.177) Max.

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC 2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Drai n

Source

Drai n

(Heat Sink)

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

0.46 (.018)

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

D3PAK Package Outline

e3 100% Sn Plated

15.95 (.628)

16.05(.632)

Revised 4/18/95

{3 Plcs}

1.22 (.048)

1.32 (.052)

Dimensions in Millimeters (Inches)

13.79 (.543)

13.99(.551)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC {2 Plcs. }

Drai n

Gate

1.04 (.041)

1.15(.045)

1.27 (.050)

1.40 (.055)

Source

13.41 (.528)

13.51(.532)

Revised 8/29/97

3.81 (.150)

4.06 (.160) (Base of Lead)

Heat Sink (Drain) and Leads are Plated

11.51 (.453)

11.61 (.457)

050-7144 Rev F 3-2012

Datasheet APT47N60BC3G Specification

Specifications and Main Features

Frequently Asked Questions

User Manual