Datasheet APT40M90JN, APT40M75JN Datasheet (Advanced Power Technology APT)

"UL Recognized" File No. E145592 (S)

D

S

G

S

D

SOT-227

APT40M75JN 400V 56.0A 0.075Ω APT40M90JN 400V 51.0A 0.090Ω

ISOTOP

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

IDM, l

V

P

TJ,T

DSS

I

D

GS

D

STG

T

L

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current

LM

Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

®

SINGLE DIE ISOTOP® PACKAGE

= 25°C

C

1

and Inductive Current Clamped

= 25°C

C

= 25°C unless otherwise specified.

C

APT APT

40M75JN 40M90JN

400 400

UNIT

Volts

56 51

224 204

Amps

±30 520

4.16

Volts

Watts

W/°C

-55 to 150 300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current (V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V

2

= VGS, ID = 2.5mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT40M75JN APT40M90JN 400 APT40M75JN 56 APT40M90JN 51 APT40M75JN 0.075 APT40M90JN 0.090

400

250 1000 ±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)557 92 15 15 FAX: (33) 5 56 47 97 61

Characteristic

Junction to Case

ΘJC

Case to Sink

ΘCS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.06

UNIT

0.24

°C/W

050-4037 Rev E

DYNAMIC CHARACTERISTICS

APT40M75/40M90JN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions

Continuous Source Current

S

(Body Diode) Pulsed Source Current

(Body Diode) Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t

Q

MIN TYP MAX

GS

= 0V

5630 6800 1320 1950

510 720

= 10V

DSS

241 370

34 50

117 180

= 15V

DSS

16 32 31 62 45 70 13 26

MIN TYP MAX

APT40M75JN APT40M90JN 51 APT40M75JN 224 APT40M90JN 204

370 740

816

56

1.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

PACKAGE CHARACTERISTICS

L L

Characteristic / Test Conditions

Internal Drain Inductance

D

Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)

S

(Measured From Drain Terminal to Center of Die.)

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations.

0.3

D=0.5

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.05

0.01

0.005

0.001

MIN TYP MAX

2500

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

10

1.0 10

Symbol

V

Isolation

C

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

050-4037 Rev E

UNIT

3

nH

5

Volts

35

13

t

1

t

2

t

1

/

t

2

+ T

θJC

C

pF

in-lbs

APT40M75/40M90JN

200

160

120

80

40

, DRAIN CURRENT (AMPERES)

D

VGS=10 & 15V

9V

8V

7V

6V

5V

200

160

120

80

40

, DRAIN CURRENT (AMPERES)

D

VGS=15V

10V

9V

8V

7V

6V

5V

0

0 40 80 120 160 200 0 4 8 12 16 20

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

VDS> ID (ON) x RDS (ON)MAX.

80

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

60

40

TJ = -55°C

TJ = +25°C

TJ = +125°C

3.0

2.5

2.0

1.5

TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

VGS=20V

20

, DRAIN CURRENT (AMPERES) I

D

TJ = +125°C

TJ = +25°C

0

0 2 4 6 8 10 0 50 100 150 200 250 V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = -55°C

60

50

APT40M75JN

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

DS

0.0

(ON) vs DRAIN CURRENT

DS

1.2

1.1

40

APT40M90JN

1.0

30

0.9

20

, DRAIN CURRENT (AMPERES) I

10

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

050-4037 Rev E

500

APT40M75JN APT40M90JN

OPERATION HERE

100

50

LIMITED BY R

APT40M75JN APT40M90JN

(ON)

DS

10

5

1

TC =+25°C TJ =+150°C

.5

, DRAIN CURRENT (AMPERES)

D

SINGLE PULSE

10µS

100µS

1mS

10mS 100mS

DC

20,000

10,000

5,000

1,000

500

APT40M75/40M90JN

C

iss

C

oss

C

rss

.1

1 5 10 50 100 400 .1 .5 1 5 10 50

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

VDS=80V

16

12

VDS=200V

VDS=320V

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

200

160

120

T

=+150°C

80

40

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

J

T

=+25°C

J

0

T

=-55°C

J

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161) W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

8.9 (.350)

9.6 (.378) Hex Nut M4

(4 places)

®

ISOTOP

050-4037 Rev E

r = 4.0 (.157) (2 places)

is a Registered Trademark of SGS Thomson.

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

4.0 (.157)

4.2 (.165) (2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

* Source

Dimensions in Millimeters and (Inches)

1.95 (.077)

2.14 (.084)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

*

Source terminals are shorted internally. Current handling capability is equal for either Source terminal.

Gate

25.2 (0.992)

25.4 (1.000)