Datasheet APT4018BN, APT4016BN Datasheet (Advanced Power Technology APT)

Page 1
D
G
S
TO-247
APT4016BN 400V 31.0A 0.16 APT4018BN 400V 29.0A 0.18
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
I
V
TJ,T
DSS
I
D
DM
GS
D
STG
T
L
Parameter
Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
®
= 25°C unless otherwise specified.
C
APT APT
4016BN 4018BN
400 400
= 25°C
C
1
31 29
124 116
±30
= 25°C
C
360
2.9
-55 to 150 300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current (V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
2
Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V
= VGS, ID = 1.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT4016BN
400
APT4018BN 400 APT4016BN 31 APT4018BN 29 APT4016BN 0.16 APT4018BN 0.18
250 1000 ±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
UNIT
0.34
°C/W
40
050-4008 Rev C
Page 2
DYNAMIC CHARACTERISTICS
APT4016/4018BN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 1.8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
t
Characteristic / Test Conditions / Part Number
Continuous Source Current
S
(Body Diode) Pulsed Source Current
1
(Body Diode)
2
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
Q
MIN TYP MAX
GS
= 0V
2850 3500
690 900 280 400
= 10V
DSS
130 200
20 30 60 90
= 15V
DSS
15 30 42 84 90 135 65 130
MIN TYP MAX
APT4016BN APT4018BN 29 APT4016BN 124 APT4018BN 116
350 700
4.5 9
31
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1 SOA2
I
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-4008 Rev C
Characteristic
Safe Operating Area Safe Operating Area
Inductive Current Clamped
LM
0.5
D=0.5
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.1
0.05
0.01
0.005
0.001
0.2
0.1
0.05
0.02
0.01
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
SINGLE PULSE
-4
10
Test Conditions / Part Number
V
= 0.4 V
DS
= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
I
DS
, IDS = PD / 0.4 V
DSS
, t = 1 Sec.
DSS
APT4016BN 124 APT4018BN 116
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
10
MIN TYP MAX
360 360
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
1.0 10
UNIT
Watts
Amps
t
1
t
2
t
1
/
t
2
+ T
θJC
C
Page 3
APT4016/4018BN
30
VGS=10V
24
6.5V
30
24
VGS=10V
6.5V
18
12
6
, DRAIN CURRENT (AMPERES)
D
6V
5.5V
5V
18
12
6
, DRAIN CURRENT (AMPERES)
D
4.5V
0
0 4080120160200 0123456
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
30
VDS> ID (ON) x RDS (ON)MAX.
24
TJ = -55°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25°C
TJ = +125°C
2.50
2.00
TJ = 25°C 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
18
1.50
VGS=10V
12
6
, DRAIN CURRENT (AMPERES) I
D
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0 2 4 6 8 10 0 20 40 60 80 100 V
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
GS
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R
32
1.00
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.50
DS
(ON) vs DRAIN CURRENT
DS
1.2
VGS=20V
6V
5.5V
5V
4.5V
24
APT4016BN
1.1
APT4018BN
1.0
16
0.9
8
, DRAIN CURRENT (AMPERES) I
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.8
(ON), DRAIN-TO-SOURCE BREAKDOWN R
DSS
0.7
1.4
1.2
1.0
0.8
(NORMALIZED) VOLTAGE (NORMALIZED)
(TH), THRESHOLD VOLTAGE BV
0.6
GS
V
0.4
050-4008 Rev C
Page 4
200
APT4016BN
100
APT4018BN
OPERATION HERE
LIMITED BY R
APT4016BN APT4018BN
(ON)
DS
10
1
TC =+25°C
, DRAIN CURRENT (AMPERES)
D
TJ =+150°C SINGLE PULSE
10µS
100µS
1mS
10mS
100mS DC
10,000
5,000
1,000
500
APT4016/4018BN
C
iss
C
oss
C
rss
.1
1 5 10 50 100 400 .01 .05 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
ID = ID [Cont.]
VDS=80V
VDS=200V
VDS=320V
200
100
50
20
10
T
J
=+150°CT
=+25°C
J
5
4
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
GS
V
0
0 40 80 120 160 200 0 0.5 1.0 1.5 2.0 2.5 3.0
Q
, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
g
2
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
DR
1
I
TO-247AD Package Outline
050-4008 Rev C
Drain
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
Dimensions in Millimeters and (Inches)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC 2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate Drain Source
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