Datasheet APT30M90AVR Datasheet (Advanced Power Technology APT)

APT30M90AVR

300V 33A 0.090Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-3 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

1

= 25°C

C

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

TO-3

G

APT30M90AVR

300

33

132

±30
±40

235

1.88

-55 to 150
300

33
30

1300

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

300

33

24

0.090
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5822 Rev A

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT30M90AVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 1.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

4100 4950

700 980
200 300
130 195

25 37
55 77
12 24
10 20
43 65

714

MIN TYP MAX

33

132

1.3

390

6

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5582 Rev A

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

θJA

0.6

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 2.39mH, R

j

=

-1

10

MIN TYP MAX

0.53
30

25Ω, Peak IL = 33A

G

=

1.0 10

UNIT

°C/W

APT30M90AVR

60

VGS=6V, 7V, 10V & 15V

50

40

5.5V

60

50

VGS=15V

VGS=10V

VGS=7V

6V

5.5V

40

30

5V

20

, DRAIN CURRENT (AMPERES)

10

D

0

0 30 60 90 120 150 0 1 2 3 4 5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4.5V

4V

30

20

, DRAIN CURRENT (AMPERES)

10

D

0

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

60

TJ = -55°C

TJ = +25°C

50

40

VDS> ID (ON) x RDS (ON)MAX.

TJ = +125°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

30

20

, DRAIN CURRENT (AMPERES) I

10

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

0

02468 0255075100125150

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

35

2.0

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.8

1.6

1.4

1.2

VGS=10V

VGS=20V

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.20

5V

4V

30

25

1.15

1.10

20

1.05

15

, DRAIN-TO-SOURCE BREAKDOWN R

1.00

0.95

DSS

0.90

1.2

1.1

10

, DRAIN CURRENT (AMPERES) I

5

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5822 Rev A

150
100

50

OPERATION HERE

LIMITED BY RDS (ON)

10µS
100µS

10,000

5,000

APT30M90AVR

C

iss

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TJ =+150°C
SINGLE PULSE

.1

1 5 10 50 100 300 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

0

0 50 100 150 200 250 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

VDS=60V

VDS=150V

VDS=240V

1mS

10mS

100mS
DC

1,000

500

100

200
100

T

50

10

5

1

.5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

.1

I

=+150°C T

J

=+25°C

J

C

oss

C

rss

22.23 (.875) Max.

6.35 (.250)

9.15 (.360)

TO-3 (TO-204AE) Package Outline

3.84 (.151)

4.09 (.161)
(2-Places)

Seating
Plane

Gate

Source

Drain

(Case)

1.47 (.058)

1.60 (.063)
(2-Places)

1.52 (.060)

3.43 (.135)

7.92 (.312)

12.70 (.500)

Dimensions in Millimeters and (Inches)

16.64 (.655)

17.15 (.675)

29.90 (1.177)

30.40 (1.197)

5.21 (.205)

5.72 (.225)

10.67 (.420)

11.18 (.440)

25.15 (0.990)

26.67 (1.050)

38.61 (1.52)

39.12 (1.54)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5822 Rev A

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058