Page 1
APT30M19JVR
300V 130A 0.019Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular SOT-227 Package
S
G
®
ISOTOP
G
D
®
S
SOT-227
"UL Recognized"
D
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
TJ,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
1
4
APT30M19JVR
300
130
520
±30
±40
700
5.6
-55 to 150
300
130
50
3600
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 5792 15 15 FAX: (33) 556 4797 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
(V
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
300
130
24
0.019
100
500
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5585 Rev B
Page 2
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT30M19JVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = 0.5 I
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
D[Cont.]
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
18000 21600
3250 4550
980 1470
650 975
115 175
290 435
22 44
33 66
70 135
10 20
MIN TYP MAX
130
520
1.3
620
14
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5585 Rev B
THERMAL/PACKAGE CHARACTERISTICS
Symbol
R
R
V
Isolation
Torque
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
3
See MIL-STD-750 Method 3471
4
Starting T
0.2
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
, THERMAL IMPEDANCE (°C/W)
Z
JC
θ
0.0005
0.1
0.05
0.01
0.005
0.001
10
+25°C, L = 426µH, R
j
=
-1
10
MIN TYP MAX
0.18
40
2500
13
25Ω, Peak IL = 130A
G
=
1.0 10
UNIT
°C/W
Volts
lb•in
Page 3
APT30M19JVR
360
300
VGS=8V, 9V, 10V & 15V
7V
360
300
VGS=15V
10V
9V
8V
7V
240
180
120
, DRAIN CURRENT (AMPERES)
60
D
0
0 25 50 75 100 125 150 0 1 2 3 4 5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6.5V
6V
5.5V
5V
4.5V
240
180
120
, DRAIN CURRENT (AMPERES)
60
D
0
6.5V
5.5V
4.5V
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
360
300
240
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
180
TJ = -55°C
TJ = +25°C
TJ = +125°C
120
, DRAIN CURRENT (AMPERES) I
60
D
0
02468 050100150200250300
V
GS
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TJ = +125°C
TJ = +25°C
TJ = -55°C
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
150
1.15
1.10
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
VGS=10V
1.05
1.00
VGS=20V
0.95
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.90
DS
1.20
6V
5V
, DRAIN-TO-SOURCE BREAKDOWN R
1.15
1.10
1.05
1.00
0.95
DSS
0.90
1.2
1.1
125
100
75
50
, DRAIN CURRENT (AMPERES) I
25
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
C
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.0
1.5
0.9
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.8
(NORMALIZED) VOLTAGE (NORMALIZED)
(TH), THRESHOLD VOLTAGE BV
0.7
GS
V
0.6
050-5585 Rev B
Page 4
1,000
OPERATION HERE
LIMITED BY RDS (ON)
100
50
10
TC =+25°C
5
, DRAIN CURRENT (AMPERES)
D
TJ =+150°C
SINGLE PULSE
10µS
100µS
1mS
10mS
100mS
DC
50,000
10,000
5,000
1,000
APT30M19JVR
C
iss
C
oss
C
rss
1
1 5 10 50 100 300 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
ID = 0.5 ID [Cont.]
16
12
8
4
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
GS
V
0
0 200 400 600 800 1000 1200 1400 0 0.4 0.8 1.2 1.6 2.0
Q
, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
g
VDS=60V
VDS=150V
VDS=240V
500
300
T
=+150°C T
100
50
10
5
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
DR
1
I
J
=+25°C
J
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
14.9 (.587)
15.1 (.594)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
* Source Drain
0.75 (.030)
0.85 (.033)
1.95 (.077)
2.14 (.084)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum
V
Isolation
®
ISOTOP
is a Registered Trademark of SGS Thomson.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-5585 Rev B
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
25.2 (0.992)
12.6 (.496)
25.4 (1.000)
12.8 (.504)
*
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
"UL Recognized" File No. E145592
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