Datasheet APT10M30AVR Datasheet (Advanced Power Technology APT)

APT10M30AVR

100V 65A 0.030Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-3 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E E

Parameter

Drain-Source Voltage Continuous Drain Current @ T

D

Pulsed Drain Current Gate-Source Voltage Continuous

GS

1 5

= 25°C

C

Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1 5

Avalanche Current Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

5

®

D

G

S

APT10M30AVR

100

UNIT

Volts

65

260

Amps

±30 ±40

Volts

235

1.88

-55 to 150

Watts

W/°C

°C

300

65

Amps

30

1500

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 47 9761

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2 5

(V Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

DS

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

x R

DS(on)

, VGS = 0V)

DSS

DS

Max, VGS = 10V)

)

D[Cont.]

, VGS = 0V, TC = 125°C) = 0V)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

100

65

24

0.030 250

1000 ±100

UNIT

Volts

Amps Ohms

µA

nA

Volts

050-5830 Rev -

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10M30AVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = 0.5 I

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 1.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

1 5

5

(Body Diode)

, dlS/dt = 100A/µs)

D[Cont.]

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 10V

D[Cont.]

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

4300 5160 1600 2240

650 975 150 225

28 42 75 115 13 26 22 44 40 60 10 20

MIN TYP MAX

65

260

1.3

150

1.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5830 Rev -

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1

Repetitive Rating: Pulse width limited by maximum T

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case Junction to Ambient

0.6

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

4

j

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

Starting T

5

The maximum current is limited by lead temperature.

-2

10

+25°C, L = 0.71mH, R

j

=

-1

10

MIN TYP MAX

0.53 30

25Ω, Peak IL = 65A

G

=

1.0 10

UNIT

°C/W

APT10M30AVR

150

125

100

VGS=10V & 15V

7V

6.5V

150

125

100

VGS=15V

10V

7V

6.5V

75

50

, DRAIN CURRENT (AMPERES)

25

D

0

01020304050 012345 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6V

5.5V

5V

4.5V 4V

75

50

, DRAIN CURRENT (AMPERES)

25

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

150

125

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

100

75

TJ = -55°C

TJ = +25°C

TJ = +125°C

1.2

1.1

1.0

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

50

0.9

, DRAIN CURRENT (AMPERES) I

25

D

TJ = +125°C

TJ = +25°C

0

0 2 4 6 8 10 0 25 50 75 100 125 150

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

80

TJ = -55°C

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.15

VGS=20V

6V

5.5V

5V

4.5V 4V

60

1.10

1.05

40

1.00

20

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.00

C

ID = 0.5 ID [Cont.]

VGS = 10V

1.75

1.50

1.25

(NORMALIZED)

1.00

0.75

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.50

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.95

, DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.90

1.2

1.1

1.0

0.9

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5830 Rev -

400

OPERATION HERE

LIMITED BY RDS (ON)

100

50

10

5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

100µS

1mS

10mS

100mS DC

15,000 10,000

5,000

1,000

500

APT10M30AVR

C

oss

C

iss

C

iss

C

oss

C

rss

1

1 5 10 50 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=20V

VDS=50V

VDS=80V

100

200

100

50

10

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

T

=+150°C T

J

5

1

=+25°C

J

TO-3 (TO-204AE) Package Outline

3.84 (.151)

4.09 (.161)

22.23 (.875) Max.

Seating Plane

Gate

Source

1.47 (.058)

1.60 (.063) (2-Places)

Drain

(Case)

(2-Places)

16.64 (.655)

17.15 (.675)

29.90 (1.177)

30.40 (1.197)

38.61 (1.52)

39.12 (1.54)

1.52 (.060)

3.43 (.135)

6.35 (.250)

9.15 (.360)

7.92 (.312)

12.70 (.500)

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5830 Rev -

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

5.21 (.205)

5.72 (.225)

10.67 (.420)

11.18 (.440)

25.15 (0.990)

26.67 (1.050)