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APT10M09B2VR
APT10M09LVR
100V 100A 0.009W
®
B2VR
POWER MOS V
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Identical Specifications: T-MAX™ or TO-264 Package
• Faster Switching • 100% Avalanche Tested
• Lower Leakage
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ T
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
ADVANCED TECHNICAL
1 5
1 5
= 25°C
C
= 25°C
C
(Repetitive and Non-Repetitive)
1
4
INFORMATION
5
T-MAX™
G
APT10M09
-55 to 150
100
100
400
±30
±40
625
5.0
300
100
50
3000
TO-264
LVR
D
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33)5 56 47 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2 5
(V
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
DS
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
x R
DS(on)
, VGS = 0V)
DSS
DSS
DS
Max, VGS = 10V)
)
D[Cont.]
, VGS = 0V, TC = 125°C)
= 0V)
MIN TYP MAX
100
100
24
0.009
250
1000
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5911 rev A 4-2000
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DYNAMIC CHARACTERISTICS APT10M09 B2VR - LVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
V
= 0.5 V
DD
ID = 0.5 I
V
GS
V
= 0.5 V
DD
ID = I
D[Cont.]
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
Pulsed Source Current
ADVANCED TECHNICAL
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
1 5
INFORMATION
5
(Body Diode)
, dlS/dt = 100A/ µs)
D[Cont.]
S
= -I
, dlS/dt = 100A/ µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
D[Cont.]
= 15V
= 0.6W
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
10030
3730
1370
340
109
131
18
36
51
9
MIN TYP MAX
100
400
1.3
270
2.9
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
1
Repetitive Rating: Pulse width limited by maximum T
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-5911 rev A 4-2000
Characteristic
Junction to Case
Junction to Ambient
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Collector
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
These dimensions are equal to the TO-247 without the mounting hole.
20.80 (.819)
21.46 (.845)
(.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
4.50
5.45 (.215) BSC
2-Plcs.
4
j
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
Starting T
5
The maximum current is limited by lead temperature.
Collector
+25°C, L = 600µH, R
j
=
TO-264 (L) Package OutlineT-MAX™ (B2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.76 (.030)
0.48 (.019)
1.30 (.051)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
19.51 (.768)
20.50 (.807)
MIN TYP MAX
0.20
40
25W, Peak IL = 100A
G
=
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter
UNIT
°C/W
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