Datasheet APT100GF60JRD Datasheet (Advanced Power Technology APT)

APT100GF60JRD

600V 140A

C

®

E

SOT-227

"UL Recognized"

C

Fast IGBT & FRED

The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non­Punch Through Technology the Fast IGBT™ combined with an APT free­wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

E

G

ISOTOP

• Low Tail Current • Ultra Low Leakage Current

• RBSOA and SCSOA Rated

• Ultrafast Soft Recovery Antiparallel Diode

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

I

C1

I

C2

I

CM1

I

CM2

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage

GE

Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KΩ)

GE

= 25°C

C

= 90°C

C

1

@ TC = 25°C

1

@ TC = 90°C

G

APT100GF60JRD

600
600
±20
140
100
280
200
390

-55 to 150
300

E

UNIT

Volts

Amps

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (VGE = ±20V, V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

CES

APT Website - http://www.advancedpower.com

= 0V, IC = 0.8mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= 0V)

CE

2

2

MIN TYP MAX

600

4.5 5.5 6.5

2.5 2.7

3.3 3.9

0.8

TBD

±100

UNIT

Volts

mA

nA

052-6255 Rev A

DYNAMIC CHARACTERISTICS (IGBT) APT100GF60JRD

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy

4

Turn-off Switching Energy
Total Switching Losses

4

Turn-on Delay Time
Rise Time

PRELIMINARY

Turn-off Delay Time
Fall Time
Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

RG = 5Ω

Inductive Switching (150°C)

V

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

GE

I

R

T

= +150°C

J

(Peak) = 0.66V

CLAMP

V

GE

I

R

T

J

VCE = 20V, I

= 15V

= I

C

C2

= 5Ω

G

= 15V

= I

C

C2

= 5Ω

G

= +25°C

CES

°C)

CES

= I

C

C2

MIN TYP MAX

4400 5900

890 1250
290 435

335

40

195

30
105
145
135

40
200
250
140

7.0

5.6

13.6
40

200
210
115

11.0

6

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Leakages include the FRED and IGBT.

3

See MIL-STD-750 Method 3471

4

Switching losses include the FRED and IGBT.

052-6255 Rev A

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient

Package Weight

T

Mounting Torque (

Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)

MIN TYP MAX

0.32

0.42
40

1.03

29.2
10

1.1

UNIT

°C/W

oz

gm
lb•in
N•m

APT100GF60JRD

ULTRAFAST SOFT RECOVERY PARALLEL DIODE

MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

V

RRM

V

RWM

IF(AV)

(RMS)

I

F

I

FSM

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

R

Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

= 60°C, Duty Cycle = 0.5)

C

STATIC ELECTRICAL CHARACTERISTICS (FRED)

Symbol

V

Characteristic / Test Conditions

Maximum Forward Voltage I

F

I

F

F

IF = 100A, TJ = 150°C

= 100A
= 200A

APT100GF60JRD

600

100
170

1000

MIN TYP MAX

2.0

1.7

1.7

UNIT

Volts

Amps

UNIT

Volts

DYNAMIC CHARACTERISTICS (FRED)

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I
Reverse Recovery Time TJ = 25°C

= 100A, diF/dt = -800A/µs, VR = 350V TJ = 100°C

I

F

Forward Recovery Time TJ = 25°C

= 100A, diF/dt = 800A/µs, VR = 350V TJ = 100°C

I

F

Reverse Recovery Current TJ = 25°C

= 100A, diF/dt = -800A/µs, VR = 350V TJ = 100°C

I

F

Recovery Charge T
IF = 100A, diF/dt = -800A/µs, VR = 350V TJ = 100°C
Forward Recovery Voltage T

= 100A, diF/dt = 800A/µs, VR = 350V TJ = 100°C

I

F

Rate of Fall of Recovery Current TJ = 25°C

= 100A, diF/dt = -800A/µs, VR = 350V (See Figure 10) TJ = 100°C

I

F

PRELIMINARY

= 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C

F

= 25°C

J

= 25°C

J

MIN TYP MAX

60 75
60

92
185
185

27 38

42 54
810

1930

10.2

10.2
600
400

UNIT

ns

Amps

nC

Volts

A/µs

052-6255 Rev A

300

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

240

180

120

TJ = 150°C

TJ = 100°C

TJ = 25°C

4000

3000

2000

TJ=100°C

VR=350V

APT100GF60JRD

200A

100A

, FORWARD CURRENT

F

60

0

0 1 2 3 4 10 50 100 500 1000

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

TJ = -55°C

1000

, REVERSE RECOVERY CHARGE

rr

0

50A

Figure 1, Forward Voltage Drop vs Forward Current Figure 2, Reverse Recovery Charge vs Current Slew Rate

1.6

Q

1.2

t

0.8

0.4

, DYNAMIC PARAMETERS Q

f

I

rr

RRM

rr

t

rr

Q

rr

0.0

, REVERSE RECOVERY CURRENT I

RRM

60

TJ=100°C
VR=350V

50

40

200A

100A

50A

30

20

10

0

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

Figure 3, Reverse Recovery Current vs Current Slew Rate Figure 4, Dynamic Parameters vs Junction Temperature

400

300

TJ=100°C
VR=350V

200A

3000

2500

2000

TJ=100°C
VR=350V

IF=100A

V

fr

15

12.5

10

100A

200

50A

PRELIMINARY

1500

1000

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

7.5

5

100

, REVERSE RECOVERY TIME I

rr

0

0 200 400 600 800 1000 0 200 400 600 800 1000

/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

di

Figure 5, Reverse Recovery Time vs Current Slew Rate Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate

F

, FORWARD RECOVERY TIME K

500

fr

t

t

fr

0

2.5

0

0.5
D=0.5

(VOLTS)

, FORWARD RECOVERY VOLTAGE

fr

V

052-6255 Rev A

0.1

0.05

0.2

0.1

0.05

(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)

0.01

, THERMAL IMPEDANCE t

0.005

ΘJC

Z

0.001

-5

10

Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.02

0.01
SINGLE PULSE

-4

10

-3

10

V

RECTANGULAR PULSE DURATION (SECONDS)

, REVERSE VOLTAGE (VOLTS)

R

-2

10

-1

10

1.0 10

30µH

APT100GF60JRD

V

r

D.U.T.

t

Q

/

rr

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 25, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

di

2

/dt - Current Slew Rate, Rate of Forward

F

Current Change Through Zero Crossing.

1

Zero

3

4

5
6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line

Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

PRELIMINARY

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

PRELIMINARY

Figure 8, Diode Reverse Recovery Waveform and Definitions

RRM

and trr.

F

6

{ diM/dt}

.

RRM

PEARSON 411

CURRENT

TRANSFORMER

3

2

rr.

4

6

5

0.5 I

RRM

0.75 I

RRM

Q

rr

= 1/

t

I

(

rr

2

)

RRM

.

r = 4.0 (.157)
(2 places)

052-6255 Rev A

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

8.9 (.350)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Emitter Collector

* Emitter

Dimensions in Millimeters and (Inches)

9.6 (.378)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

0.75 (.030)

0.85 (.033)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)