Datasheet APT10050LVFR, APT10050B2VFR Datasheet (Advanced Power Technology APT)

APT10050B2VFR

APT10050LVFR

1000V 21A 0.500W

®

B2VR

POWER MOS V

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Identical Specifications: T-MAX™ or TO-264 Package

• Faster Switching • 100% Avalanche Tested

• Lower Leakage

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

T-MAX™

G

APT10050

-55 to 150

1000

21

84
±30
±40
520

4.16

300

21

50

2500

TO-264

LVR

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1000

21

24

0.500
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5591 Rev C 10-2000

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

DYNAMIC CHARACTERISTICS

APT10050B2VFR/LVFR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Timexxdx
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

5

MIN TYP MAX

GS

= 0V

6600 7900

595 830
290 430
335 500

DSS

29 45

165 250

= 15V

DSS

16 32
13 26
59 90

816

MIN TYP MAX

T

= 25°C 300

j

T

= 125°C 600

j

T

= 25°C 1.7

j

T

= 125°C 4.8

j

T

= 25°C 12

j

T

= 125°C 19

j

21
84

1.3
5

UNIT

pF

nC

ns

UNIT

Amps

Volts

V/ns

ns

µC

Amps

050-5591 Rev C 10-2000

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

qJC

Junction to Ambient

qJA

0.3

D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

3

See MIL-STD-750 Method 3471

4

Starting T

5

IS £ -ID [Cont.],

+25°C, L = 11.34mH, R

j

=

di

VR = 200V.

-3

-2

10

10

/

= 100A/µs, V

dt

-1

MIN TYP MAX

0.24
40

25W, Peak IL = 21A

G

=

V

, T

DD

DSS

-

1.0 10

150°C, R

j

-

UNIT

°C/W

= 2.0W,

G

APT10050B2VFR/LVFR

50

50

40

30

VGS=5.5V, 10V & 15V

5V

20

4.5V

10

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

40

VGS=5.5V, 10V & 15V

30

20

10

, DRAIN CURRENT (AMPERES)

D

0

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

50

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

40

1.3

1.2

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

30

1.1

20

10

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

0

02468 01020304050

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

25

TJ = -55°C

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

VGS=10V

VGS=20V

5V

4V

20

1.10

1.05

15

1.00

10

0.95

5

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.90

DSS

0.85

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5591 Rev C 10-2000

100

OPERATION HERE

50

LIMITED BY RDS (ON)

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS
100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

500

APT10050B2VFR/LVFR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 5001000 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

8

ID = ID [Cont.]

VDS=100V

VDS=200V

VDS=500V

100

T

50

=+150°C T

J

=+25°C

J

10

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

T-MAXTM (B2) Package Outline

TO-264 (L) Package Outline

Drain

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain

Drain

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

25.48 (1.003)

26.49 (1.043)

19.81 (.780)

21.39 (.842)

Source

0.48 (.019)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC
2-Plcs.

0.84 (.033)

2.59 (.102)

3.00 (.118)

These dimensions are equal to the TO-247 without the mounting hole.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5591 Rev C 10-2000

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

Dimensions in Millimeters and (Inches)

5.79 (.228)

6.20 (.244)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Drain
Source