Datasheet APT10050B2VR Datasheet (Advanced Power Technology APT)

APT10050B2VR

1000V 21A 0.500Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • New T-MAX™ Package

(Clip-mounted TO-247 Package)

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

1

Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy

(Repetitive and Non-Repetitive)

1

4

APT10050B2VR

T-MAX™

G

1000

21 84

±30 ±40

520

4.16

-55 to 150 300

21 50

2500

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 47 9761

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

1000

21

24

0.500 25

250

±100

UNIT

Volts

Amps Ohms

µA

nA

Volts

050-5614 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10050B2VR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

6600 7900

595 830 290 430 335 500

29 45

165 250

16 32 13 26 59 90

816

MIN TYP MAX

21 84

1.3

960

22

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5614 Rev B

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case Junction to Ambient

θJA

0.3

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

5

These dimensions are equal to the TO-247AD without mounting hole

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

-3

-2

10

+25°C, L = 11.34mH, R

j

=

-1

10

MIN TYP MAX

0.24 40

25Ω, Peak IL = 21A

G

=

1.0 10

UNIT

°C/W

APT10050B2VR

50

40

30

VGS=5.5V, 10V & 15V

5V

20

4.5V

10

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

40

VGS=5.5V, 10V & 15V

30

20

10

, DRAIN CURRENT (AMPERES)

D

0

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

50

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

40

1.3

1.2

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

30

1.1

20

10

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

0

02468 01020304050

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

25

TJ = -55°C

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

VGS=10V

VGS=20V

5V

4V

20

1.10

1.05

15

1.00

10

0.95

5

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.90

DSS

0.85

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5614 Rev B

100

OPERATION HERE

50

LIMITED BY RDS (ON)

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

10µS 100µS

1mS

10mS

100mS DC

30,000

10,000

5,000

1,000

500

APT10050B2VR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 500 1000 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=100V

VDS=200V

VDS=500V

T-MAX™ Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

100

50

10

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

5

1

T

=+150°C T

J

5

15.49 (.610)

16.26 (.640)

=+25°C

J

5.38 (.212)

6.20 (.244)

20.80 (.819)

21.46 (.845)

Drain

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC 2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5614 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Drain Source