Datasheet APT1004R2KN, APT1004RKN Datasheet (Advanced Power Technology APT)

D

TO-220

G

APT1004RKN 1000V 3.6A 4.00Ω

S

APT1004R2KN 1000V 3.5A 4.20Ω

POWER MOS IV

®

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS

Symbol Parameter

V

TJ,T

Drain-Source Voltage

DSS

Continuous Drain Current

I

D

I

Pulsed Drain Current

DM

V

Gate-Source Voltage

GS

P

Total Power Dissipation @ T

D

Operating and Storage Junction Temperature Range

STG

1

= 25°C, Derate Above 25°C

C

STATIC ELECTRICAL CHARACTERISTICS

BV

I

I

ID(ON)

V

GS

R

DS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

DSS

Zero Gate Voltage Drain Current (V

DSS

GSS

(TH)

(ON)

= 0.8 V

(V

DS

Gate-Source Leakage Current (V
On State Drain Current

(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Gate Threshold Voltage (V
Static Drain-Source On-State Resistance

(VGS = 10V, ID = 0.5 ID [Cont.])

, VGS = 0V, TC = 125°C)

DSS

2

DS

DS

= ±30V, V

GS

= VGS, ID = 1.0mA)

= V

, VGS = 0V)

DSS

DS

2

= 0V)

All Ratings: TC = 25°C unless otherwise specified.

APT1004R2KN APT1004RKN UNIT

1000 1000 Volts

3.5 3.6 Amps

14.0 14.4 Amps
±30 Volts
125 Watts

-55 to 150 °C

TYPMIN MAX UNITSymbol Characteristic / Test Conditions / Part Number

APT1004RKN 1000 Volts
APT1004R2KN

1000 Volts

250

µA

nA

APT1004RKN
APT1004R2KN

1000
±100

3.6 Amps

3.5 Amps
24Volts

APT1004RKN
APT1004R2KN

4.00 Ohms

4.20 Ohms

THERMAL CHARACTERISTICS

Symbol Characteristic MIN TYP UNITMAX

R
R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Junction to Case

θJC

Junction to Ambient

θJA

T

Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.

L

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1.00 °C/W
80 °C/W

300 °C

050-0036 Rev C

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT1004R/1004R2KN

Test Conditions TYP

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Input Capacitance
Output Capacitance

Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time

Fall Time

V

ID = ID [Cont.], VGS = 15V

VGS = 0V

= 25V

V

DS

f = 1 MHz

= 10V, ID = ID [Cont.]

GS

= 0.5 V

V

DD

VDD = 0.5 V

R

= 1.8Ω

G

DSS

DSS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions / Part Number UNITMAXTYPMIN

APT1004RKN 3.6 Amps
APT1004R2KN 3.5 Amps
APT1004RKN 14.4 Amps
APT1004R2KN 14.0 Amps

150 290 580 ns

0.8 1.65 3.3 µC

V

I

Continuous Source Current (Body Diode)

S

I

Pulsed Source Current

SM

Diode Forward Voltage

SD

t

Reverse Recovery Time (I

rr

Q

Reverse Recovery Charge

rr

1

(Body Diode)

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

UNITMAXMINSymbol Characteristic

805 950 pF
115 160 pF

37 60 pF
35 55 nC

4.3 6.5 nC
18 27 nC
10 20 ns

918ns
32 48 ns
23 46 ns

1.3 Volts

SAFE OPERATING AREA CHARACTERISTICS

Test Conditions / Part NumberSymbol Characteristic MIN TYP MAX UNIT

= 0.4 V

SOA1
SOA2

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Safe Operating Area
Safe Operating Area

I

Inductive Current Clamped

LM

1.0
D=0.5

0.05

0.02

0.01

, THERMAL IMPEDANCE (°C/W)

θJC

Z

0.5

0.1

0.05

0.01

0.2

0.1

SINGLE PULSE

V

DS

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

I

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT1004RKN
APT1004R2KN

125
125 Watts

14.4 Amps

14.0 Amps

Watts

050-0036 Rev C

0.004

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0 10

R (ON), DRAIN-TO-SOURCE ON RESISTANCE

DS

(NORMALIZED)

APT1004R/1004R2KN

5

VGS=5.5V,6V &10V

4

5V

5

4

VGS=10V

6V

5.5V

5V

3

2

4.5V

1

D

I , DRAIN CURRENT (AMPERES)

0

0 100 200 300 400 500

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

4V

10

8

V > I (ON) x R (ON)MAX.

DS D DS

230µ SEC. PULSE TEST

6

4

2

D

I , DRAIN CURRENT (AMPERES)

TJ = +125°C

TJ = +25°C

0

0 2 4 6 8

V , GATE-TO-SOURCE VOLTAGE (VOLTS)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

TJ = -55°C

4

TJ = +25°CTJ = -55°C

TJ = +125°C

3

2

1

D

I , DRAIN CURRENT (AMPERES)

0

0 4 8 12 16 20

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

2.5

2.0

1.5

TJ = 25°C

2µ SEC. PULSE TEST

NORMALIZED TO

= 10V @ 0.5 ID [Cont.]

V

GS

VGS=10V

VGS=20V

1.0

0.5

0.0

0 2 4 6 8 10 12

I , DRAIN CURRENT (AMPERES)

D

FIGURE 5, R (ON) vs DRAIN CURRENT

DS

1.2

4.5V

4V

3

APT1004RKN

1.1

1.0

2

APT1004R2KN

0.9

1

D

I , DRAIN CURRENT (AMPERES)

0

25 50 75 100 125 150

T , CASE TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

0.0

DS

R (ON), DRAIN-TO-SOURCE ON RESISTANCE

T , JUNCTION TEMPERATURE (°C)

J C

0.8

VOLTAGE (NORMALIZED)

DSS

0.7

BV , DRAIN-TO-SOURCE BREAKDOWN

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

1.4

1.2

1.0

0.8

(NORMALIZED)

0.6

GS

0.4

V (TH), THRESHOLD VOLTAGE (VOLTS)

-50 -25 0 25 50 75 100 125 150-50 -25 0 25 50 75 100 125 150

T , CASE TEMPERATURE (°C)

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATUREFIGURE 8, ON-RESISTANCE vs. TEMPERATURE

050-0036 Rev C

60

10,000

APT1004R/1004R2KN

APT1004RKN
APT1004R2KN

10

OPERATION HERE

LIMITED BY R

APT1004RKN
APT1004R2KN

1

(ON)

DS

TC =+25°C
TJ =+150°C

D

I , DRAIN CURRENT (AMPERES)

.1

1 5 10 50 100 1000

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

FIGURE 10, MAXIMUM SAFE OPERATING AREA

20

ID = ID [Cont.]

16

12

SINGLE PULSE

VDS=100V

VDS=200V

8

VDS=500V

10µS

100µS

1mS

10mS
100mS
DC

4

0

GS

0 10 20 30 40 50

V , GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

Q , TOTAL GATE CHARGE (nC)

g

C

1,000

100

C, CAPACITANCE (pF)

10

0 10 20 30 40 50

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

DS

iss

C

oss

C

rss

100

50

20

TJ = +150°C TJ = +25°C

10

5

2

1

DR

0 .5 1.0 1.5 2.0

I , REVERSE DRAIN CURRENT (AMPERES)

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

V , SOURCE-TO-DRAIN VOLTAGE (VOLTS)

SD

050-0036 Rev C

16.51 (.650)

14.22 (.560)

3.43 (.135)

2.54 (.100)

TO-220AB Package Outline

1.40 (.020)

0.51 (.055)

1.14 (.045)

0.30 (.012)

2.92 (.115)

2.03 (.080)

4.83 (.190)

3.56 (.140)

Dimensions in Millimeters and (Inches)

Drain

4.09 (.161) Dia.

3.53 (.139)

6.35 (.250)
MAX.

14.73 (.580)

12.70 (.500)

1.14 (.045) 3-Plcs.

0.51 (.020)

2.29 (.090)

2.79 (.110)

4.83 (.190)

5.33 (.210)

10.67 (.420)

9.65 (.380)

5.33 (.210)

4.83 (.190)

6.86 (.270)

5.84 (.230)

Gate
Drain

Source

1.78 (.070) 3-Plcs.

1.14 (.045)