Datasheet APT1002RBN, APT1002R4BN Datasheet (Advanced Power Technology APT)

D

G

S

TO-247

APT1002RBN 1000V 7.0A 2.00Ω APT1002R4BN 1000V 6.5A 2.40Ω

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

I

V

P

TJ,T

DSS

I

D

DM

GS

D

STG

T

L

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ T Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

®

= 25°C unless otherwise specified.

C

APT APT

1002RBN 1002R4BN

1000 1000

= 25°C

C

1

7.0 6.5 28 26

±30

= 25°C

C

240

1.96

-55 to 150 300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current (V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])

2

Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (V Gate Threshold Voltage (V

= VGS, ID = 1.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT1002RBN

1000

APT1002R4BN 1000 APT1002RBN 7.0 APT1002R4BN 6.5 APT1002RBN 2.00 APT1002R4BN 2.40

250 1000 ±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33)5 56 47 97 61

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

UNIT

0.51

°C/W

40

050-0009 Rev B

DYNAMIC CHARACTERISTICS

APT1002R/1002R4BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

t

Characteristic / Test Conditions / Part Number

Continuous Source Current

S

(Body Diode) Pulsed Source Current

1

(Body Diode)

2

Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

Q

MIN TYP MAX

GS

= 0V

1530 1800

230 325

80 120

= 10V

DSS

66 105

6.5 10 36 54

= 15V

DSS

14 28 13 26 55 82 19 37

MIN TYP MAX

APT1002RBN APT1002R4BN 6.5 APT1002RBN 28 APT1002R4BN 26

450 910

2.5 5

7.0

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1 SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-0009 Rev B

Characteristic

Safe Operating Area Safe Operating Area

Inductive Current Clamped

LM

1.0

0.5

0.1

0.05

0.01

0.005

0.001

D=0.5

0.2

0.1

0.05

0.02

0.01

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

Test Conditions / Part Number

V

= 0.4 V

DS

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

I

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT1002RBN 28 APT1002R4BN 26

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

MIN TYP MAX

240 240

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

1.0 10

UNIT

Watts

Amps

t

1

t

2

t

1

/

t

2

+ T

θJC

C

APT1002R/1002R4BN

8

V =5.5, 6 & 10V

GS

6

8

V =10V

GS

6V

6

5.5V

4

2

, DRAIN CURRENT (AMPERES)

D

0

1000 0

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

5V

4.5V

4V

200 300

400

500

4

2

, DRAIN CURRENT (AMPERES)

D

0

2 4 6 8 10 12

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

16

V > I (ON) x R (ON)MAX.

DS D DS

12

230µ SEC. PULSE TEST

8

T =-55°C

J

T =+25°C

J

T =+125°C

J

2.5

2.0

1.5

TJ = 25°C

2µ SEC. PULSE TEST

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

V =10V

GS

V =20V

GS

1.0

4

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

T =+125°C

J

4

T =-55°C

J

68

T =+25°C

0

J

0

V

2

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

8

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

0

4

DS

12 16

8

(ON) vs DRAIN CURRENT

1.2

5V

4.5V

4V

20

6

APT1002RBN

APT1002R4BN

1.1

1.0

4

0.9

2

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

R

-25 0 25 50 75 100 125 150-50 T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

-25 0 25 50 75 100 125 150-50

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

-50 -25 0 25 50 75 100 125 150

050-0009 Rev B

60

10

APT1002RBN APT1002R4BN

OPERATION HERE

LIMITED BY R (ON)

APT1002RBN APT1002R4BN

10µS

DS

100µS

10,000

1,000

1mS

1

T =+25°C

C

T =+150°C

, DRAIN CURRENT (AMPERES)

D

J SINGLE PULSE

.1

1 5 10 50 100 1000

10mS 100mS DC

APT1002R/1002R4BN

100

10

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

APT1002R/1002R4BN

C

iss

C

oss

C

rss

10 30 5004020

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

8

ID = ID [Cont.]

V =100V

V =200V

DS

V =500V

DS

100

50

20

T =+150°C

J

T =+25°C

J

10

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 20 40 60 80 100

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

2

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

0 .5 1.0 1.5 2.0

TO-247AD Package Outline

4.69 (.185)

Drain

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Drain Source

050-0009 Rev B

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC 2-Plcs.

Dimensions in Millimeters and (Inches)