Page 1
APM9968C
N-Channel Enhancement Mode MOSFET
Features
• 20V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
TSSOP-8 Packages
••
=16mΩ(typ.) @ VGS=4.5V
DS(ON)
=20mΩ(typ.) @ VGS=2.5V
DS(ON)
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
• Zener Diode Protected Gate Provide
Human Body Mode Electrostatic Discharge
Protection to 2500 V.
Pin Description
1
2
S1
3
S1
45
G1 G2
TSSOP-8
D
G1
N-Channel MOSFET
G2
S1 S2
S1
8D
D
7
S2
6
S2
D
S2
Ordering and Marking Information
APM9968 C
Handling Code
Temp. Range
Package Code
APM9968C O :
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
APM9968C
XXXXX
Package Code
O : TSSOP -8
Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
XXXXX - Date Co d e
°
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Page 2
APM9968C
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
P
D
T
J
T
STG
R
*
JA
θ
Drain-Source Voltage 20
Gate-Source Voltage ±8
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 80
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (T
Parameter Rating Unit
TA=25°C
T
=100°C
A
= 25°C unless otherwise noted)
A
= 25°C unless otherwise noted)
A
1
0.4
V
A
W
°C
°C
°C/W
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
Drain-Source Break d o wn
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=0.5A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=4.5V , IDS=6A
V
GS
V
DS
V
GS
Turn-on Delay Time
V
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
DD
V
GEN
=0V , IDS=250µA
=16V , VGS=0V 1 µA
, IDS=250µA
=±8V , VDS=0V
=2.5V , IDS=5.2A
=10V , IDS= 6A
=4.5V ,
=10V , IDS=6A ,
=4.5V , RG=6Ω
APM9968C
Min.
Typ. Max.
20 V
0.6 0.7 1
±10 µA
16 20
20 25
0.7 1.3
19 25
2
5
37 68
33 62
100 182
54 100
Unit
V
mΩ
V
nC
ns
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
www.anpec.com.tw2
Page 3
APM9968C
Electrical Characteristics Cont. (T
Symbol Parameter Test Condition
C
C
C
Notes
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
=0V
V
GS
V
=15V
DS
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
APM9968C
Min.
Typ. Max.
1253
340
260
Unit
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
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Page 4
APM9968C
Typical Characteristics
Output Characteristics
20
VGS=1.8,2,3,4,5,6,7,8,9,10V
16
12
8
ID-Drain Current (A)
4
0
02468
VGS=1.5V
VGS=1V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.6
1.4
1.2
1.0
0.8
IDS=250uA
(Normalized)
0.6
0.4
VGS(th)-Threshold Voltage (V)
Transfer Characteristics
20
16
12
8
ID-Drain Current (A)
4
0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=125°C
TJ=25°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.022
0.021
0.020
0.019
0.018
0.017
0.016
RDS(ON)-On-Resistance (Ω)
0.015
VGS=2.5V
VGS=4.5V
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
0.014
0 4 8 121620
ID - Drain Current (A)
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Page 5
APM9968C
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.044
0.040
0.036
0.032
0.028
0.024
0.020
0.016
RDS(ON)-On-Resistance (Ω)
0.012
0.008
012345678
VGS - Gate-to-Source V oltage (V)
ID=6A
Gate Charge
5
VDS=10V
ID=6A
4
On-Resistance vs. Junction T emperature
1.8
VGS=4.5V
ID=6A
1.6
1.4
1.2
1.0
(Normalized)
0.8
RDS(ON)-On-Resistance (Ω)
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
2500
2000
Capacitance
Frequency=1MHz
3
2
1
VGS-Gate-Source Voltage (V)
0
0 4 8 12 16 20 24
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
1500
1000
Ciss
Capacitance (pF)
500
0
0 5 10 15 20
Coss
Crss
VDS - Drain-to-Source V oltage (V)
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Page 6
APM9968C
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
1
TJ=25°C
IS-Source Current (A)
0.1
0.0 0.4 0.8 1.2 1.6
VSD -Source-to-Drain V oltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Single Pulse Power
60
48
36
24
Power (W)
12
0
0.01 0.1 1 10 100
Time (sec)
Duty Cycle=0.5
1
D=0.2
D=0.1
D=0.05
0.1
Thermal Impedance
Normalized Effective Transient
D=0.02
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10 100
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
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Page 7
APM9968C
φ
φ
φ
Packaging Information
TSSOP-8
e
8
7
2 x E / 2
S
(2)
(L1)
GAUGE
PLANE
L
1
Dim
12
b
E1 E
e/2
D
A2
A
A1
0.25
(3)
Millimeters Inches
Min. Max. Min. Max.
A 1.2 0.047
A1 0.00 0.15 0.000 0.006
A2 0.80 1.05 0.031 0.041
b 0.19 0.30 0.007 0.012
D 2.9 3.1 0.114 0.122
e 0.65 BSC 0.026 BSC
E 6.40 BSC 0.252 BSC
E1 4.30 4.50 0.169 0.177
L 0.45 0.75 0.018 0.030
L1 1.0 REF 0.039REF
R 0.09 0.004
R1 0.09 0.004
S 0.2 0.008
10
212
312
°
REF 12° REF
°
REF 12° REF
°
8
°
0
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
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Page 8
APM9968C
Physical Specifications
Terminal Material Solder-Plated Cop per (S olde r M ate rial : 90/10 or 63/37 Sn Pb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Tem perat ure m aintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-21 9°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Package Re flow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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Page 9
APM9968C
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2 003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
P
P1
Ao
J
W
E
F
Po
A
t
D
Bo
D1
C
Ko
T2
B
T1
Application A B C J T1 T2 W P E
330 ± 1 62 +1.5
F D D1 Po P1 Ao Bo Ko tTSSOP-8
5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
12.75+
0.15
2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
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Page 10
APM9968C
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TSSOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
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