Datasheet APM9966OC-TR, APM9966KC-TR, APM9966COC-TR, APM9966CKC-TR Datasheet (ANPEC)

APM9966/C

Dual N-Channel Enhancement Mode MOSFET

Features Applications

• SOP-8

20V/6A , R
R
TSSOP-8
20V/6A , R
R

••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SO-8 and TSSOP-8 Packages

••

=19mΩ(typ.) @ VGS=4.5V

DS(ON)

=27mΩ(typ.) @ VGS=2.5V

DS(ON)

=21mΩ(typ.) @ VGS=4.5V

DS(ON)

=29mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

APM9966

1

8D1

1

8S1

2

G1
S2
G2 D2

7

3

6

45

D1

2

D1
D2

S1

3

S1

45

G1 G2

D2

7

S2

6

S2

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

APM9966C

1

8D

1

8S1

2

G1

S2

G2 D

7

3

6

45

D

2

D

D

S1

3

S1

45

G1 G2

D

7

S2

6

S2

SO-8 TSSOP-8

D1 D1

G1

S1

D2 D2

G2

S2

G1

G2

S1D1S1

D2

S2

S2

SO-8 TSSOP-8

D

G1

S1

D

G2

S2

D

G1

S1

S1

D

G2

S2

S2

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.

www.anpec.com.tw1

Rev. A.3 - Mar., 2003

APM9966/C

Ordering and Marking Information

APM9966 /C

Handling Code
Temp. Range
Package Code

APM9966/C K/O :

APM9966/C
XXXXX

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

P

D

Drain-Source Voltage 20
Gate-Source Voltage ±10
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20

Maximum Power Dissipation

Parameter Rating Unit

TA=25°C

T

=100°C

A

Package Code
K : SO-8 O : TSSOP-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

°

SO-8 1.6
TSSOP-8 1.0
SO-8 0.625
TSSOP-8 0.4

V

A

W

T

J

T

STG

R

jA

θ

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

C

°

C

°

C/W

°

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APM9966/C

Electrical Characteristics (Cont.) (T

A

Symbol Parameter Test Condition

Static

BV

V

Drain-Source Breakdown Voltage

DSS

I

Zero Gate Voltage Drain Current VDS=16V , VGS=0V 1

DSS

Gate Threshold Voltage

GS(th)

I

Gate Leakage Current

GSS

=0V , IDS=250µA

V

GS

V
V

, IDS=250µA

DS=VGS

=±10V , VDS=0V

GS

VGS=4.5V , IDS=6A

a

R

DS(ON)

a

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

T

r

t

d(OFF)

T

f

C

iss

C

oss

C

rss

Drain-Source On-state

SOP-8

Resistance

TSSOP-8

Diode Forward Voltage ISD=1.7A , VGS=0V

b

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Ris e Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

V

=2.5V , IDS=5.2A 27 33

GS

VGS=4.5V , IDS=6A
V

=2.5V , IDS=5.2A 29 35

GS

=10V , IDS= 1A

V

DS

V

=4.5V ,

GS

=10V , IDS=1A ,

V

DD

V

=4.5V , RG=0.2

GEN

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

= 25°C unless otherwise noted)

APM9966/C

Min. Typ. Max.

20 V

0.5 0.7 1
100

±

19 23

21 25

0.8 1.1

14 18

3.5

2.1
25 47
22 42

Ω

67 122
36 67

780
165
105

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

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APM9966/C

Typical Characteristics

Output Characteristics

20

VGS=2,3,4,5,6,7,8,9,10V

16

12

8

ID-Drain Current (A)

4

0

012345

1V

0.5V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

IDS=250uA

1.25

Transfer Characteristics

20

15

10

ID-Drain Current (A)

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

TJ=25°C

TJ=-55°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.05

0.04

SOP-8

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

0.03

0.02

0.01

RDS(ON)-On-Resistance (Ω)

0.00
048121620

VGS=4.5V

VGS=2.5V

ID - Drain Current (A)

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APM9966/C

Typical Characteristics (Cont.)

On-Resistance vs. Drain Current

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
0 4 8 121620

I

D - Drain Current (A)

VGS=4.5V

VGS=2.5V

TSSOP-8

On-Resistance vs. Gate-to-Source Voltage

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
012345678910

VGS - Gate-to-Source V oltage (V)

TSSOP-8

ID=6A

On-Resistance vs. Gate-to-Source Voltage

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
012345678910

VGS - Gate-to-Source V oltage (V)

SOP-8

ID=6A

On-Resistance vs. Junction T emperature

2.00

VGS=4.5V

1.75

ID=6A

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

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APM9966/C

Typical Characteristics (Cont.)

Gate Charge

5

VDS=10V
ID=1A

4

3

2

1

VGS-Gate-Source Voltage (V)

0

0 2 4 6 8 10121416

QG - Gate Charge (nC)

Source-Drain Diode Forward Voltage

20

Capacitance

1200

1000

800

600

400

Capacitance (pF)

200

0

048121620

VDS - Drain-to-Source V oltage (V)

Frequency=1MHz

Ciss

Coss

Crss

Single Pulse Power

80

10

TJ=150°C

1

TJ=25°C

IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VSD -Source-to-Drain V oltage (V)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

60

40

Power (W)

20

0

0.01 0.1 1 10

Time (sec)

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30

APM9966/C

Typical Characteristics (Cont.)

Normalized Thermal Transient Impedence, Junction to Ambient

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

Normalized Effective Transient

D=0.02

SINGLE PULSE

0.01
1E-4 1E-3 0.01 0.1 1 10

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

Square Wave Pulse Duration (sec)

30

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

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APM9966/C

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0. 004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0. 51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

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APM9966/C

φ

φ

φ

Packaging Information (Cont.)

TSSOP-8

e

8

7

2 x E / 2

(2)

S

(L1)

GAUGE

PLANE

L

1

Dim

12

b

E1 E

e/2

D

A2

A

A1

0.25

(3)

Millimeters Inches

Min. Max. Min. Max.

A 1.2 0.047
A1 0.00 0.15 0.000 0.006
A2 0.80 1.05 0.031 0.041

b 0.19 0.30 0.007 0.012

D 2.9 3.1 0.114 0.122

e 0.65 BSC 0.026 BSC

E 6.40 BSC 0.252 BSC
E1 4.30 4.50 0.169 0.177

L 0.45 0.75 0.018 0.030

L1 1.0 REF 0.039REF

R 0.09 0.004

R1 0.09 0.004

S 0.2 0.008

10
212
312

°

REF 12° REF

°

REF 12° REF

°

8

°

0

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

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APM9966/C

Physical Specifications

Termin al Ma te rial Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM9966/C

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245° C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

Po

F

A

t

D

Bo

D1

Ko

T2

C

B

T1

A pp lication A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2 .1± 0.1 0.3±0.013

A pp lication A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tTSSOP-8

5.5 ± 0. 1 1 .5 + 0 .1 1 .5 + 0 .1 4 .0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0 .3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

12.75+

0.15

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM9966/C

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

TSSOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500
12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003

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