Page 1
APM9953
P-Channel Enhancement Mode MOSFET
Features
• -20V/-3A , R
R
••
• Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• SOP-8 Package
••
=75mΩ(typ.) @ V
DS(ON)
=90mΩ(typ.) @ V
DS(ON)
=-10V
GS
=-4.5V
GS
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
/
5
/ ,
!
"#
&5
%
$
SO − 8
5
, ,
/
5
/
, ,
P-Channel MOSFET
,
,
,
APM 9953
Handling Code
Te m p . R an ge
Package Code
AP M 9953 K :
APM9953
XXXXX
Absolute Maximum Ratings
Package Code
K : S O -8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tu be
TR : Ta pe & R e el
XXXXX - Date Code
(T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
Drain-Source Voltage -20
DSS
V
Gate-Source Voltage ±10
GSS
*
I
Maximum Drain Current Continuous -3
D
IDM Maximum Drain Current Pulsed -12
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
www.anpec.com.tw1
Page 2
APM9953
q
Absolute Maximum Ratings Cont. (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
T
=25°C
A
=100°C
T
A
2.5
1.0
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
*
R
θ
JA
Thermal Resistance Junction to Ambient 62.5
Electrical Characteristics (T
Symbol Parameter Test Condition
= 25°C unless otherwise noted)
A
APM9953
Min.
Typ. Max.
Static
BV
V
R
DS(ON)
V
I
DSS
GS(th)
I
GSS
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
=
Resistance
=
Diode Forward Voltage ISD=-0.5A , VGS=0V
SD
=0V , I
V
GS
V
DS
V
DS=VGS
V
GS
DS
=-16V , V
, I
DS
=±8V , V
VGS=-10V , IDS=-3A
=-4.5V , IDS=-2A
V
GS
=-250µA
=0V -1 µA
GS
=-250µA
=0V
DS
-20
-0.5 -0.7 -1
±100
76 100
93 125
-0.7 -1.3
Dynamic>
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
=-10V , IDS=-3A
V
DS
V
=-4.5V
GS
V
=-10V , IDS=-3A ,
DD
V
=-4.5V , R
GEN
VGS=0V
V
=-15V
DS
Fre
uency=1.0MHz
=6Ω
G
5.3 6.9
1.04
0.62
13 21.5
36 56
45 69.5
37 57.5
552
118
76
W
°C
°C
°C/W
Unit
V
V
nA
mΩ
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
www.anpec.com.tw2
Page 3
APM9953
Typical Characteristics
Output Characteristics
12
-VGS= 3,4,5,6,7,8,9,10V
10
8
6
4
-ID-Drain Current (A)
2
0
012345678910
-VGS=2V
-VGS=1.5V
-VGS=1V
-VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.25
-IDS =250µA
Transfer Characteristics
12
10
8
6
4
Tj=25oC
Tj=125oC
Tj=-55oC
-ID-Drain Current (A)
2
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.11
0.10
-VGS=4.5V
1.00
0.75
(Normalized)
0.50
-VGS(th)-Threshold Voltage (V)
0.25
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
0.09
0.08
0.07
DS(ON)-On-Resistance (Ω)
R
0.06
0246810
-VGS=10V
-ID - Drain Current (A)
www.anpec.com.tw3
Page 4
APM9953
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.150
0.135
0.120
0.105
0.090
RDS(ON)-On-Resistance (Ω)
0.075
0.060
012345678910
-VGS - Gate-to-Source Voltage (V)
-ID= 3A
Gate Charge
5
-VDS= 4.5V
-I
= 2A
DS
4
On-Resistance vs. Junction Temperature
1.4
-VGS = 4.5V
1.3
-I
= 2A
DS
1.2
1.1
1.0
(Normalized)
0.9
RDS(ON)-On-Resistance (Ω)
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
780
700
600
Capacitance
Frequency=1MHz
Ciss
3
2
1
-VGS-Gate-Source Voltage (V)
0
0123456
Q
G - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
500
400
300
Capacitance (pF)
200
100
0 4 8 121620
Coss
Crss
-VDS - Drain-to-Source Voltage (V)
www.anpec.com.tw4
Page 5
APM9953
Typical Characteristics
Source-Drain Diode Forward Voltage
10
12
Tj=150oC
1
Tj=25oC
-IS-Source Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
Single Pulse Power
40
30
20
Power (W)
10
0
0.01 0.1 1 10
30
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
Thermal Impedance
Normalized Effective Transient
D=0.02
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
Square Wave Pulse Duration (sec)
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
3.TJM-TA=PDMZ
4.Surface Mounted
thJA
thJA
www.anpec.com.tw5
=62.5 oC/W
30
Page 6
APM9953
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
1 8
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
www.anpec.com.tw6
Page 7
APM9953
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Peak temperature
Time
Convection or IR/ Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bags
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
www.anpec.com.tw7
Page 8
APM9953
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
SOP-8
A B C J T1 T2 W P E
330±1 62 ± 1.5
F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.1 1.55±0.1
12.75 +
0.1 5
1.55+ 0.25
2 + 0.5 12.4 +0.2
4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
2± 0.2
12 + 0.3
- 0.1
8± 0.1 1.75± 0.1
(mm)
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
www.anpec.com.tw8
Page 9
APM9953
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
www.anpec.com.tw9
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