Datasheet APM9932KC-TR, APM9932CKC-TR Datasheet (ANPEC)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM9932/C

• N-Channel

20V/15A, R

DS(ON)

=12mΩ(typ.) @ VGS=10V

R

DS(ON)

=17mΩ(typ.) @ VGS=4.5V

• P-Channel

-20V/-6A, R

DS(ON)

=30mΩ(typ.) @ VGS=-4.5V

R

DS(ON)

=45mΩ(typ.) @ VGS=-2.5V

••

••

• Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

• Reliable and Rugged

••

••

• SO-8 Package

Pin Description

Ordering and Marking Information

Features

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

SO-8

1
2
3
45

6

7

8S1
G1
S2
G2 D2

D2

D1

D1

G1

S1

D1 D1

APM9932 /C

Handling Code
Temp. Range
Package Code

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

°

APM9932/C K :

APM9932/C
XXXXX

XXXXX - Date Code

N-Channel MOSFET

P-Channel MOSFET

G2

S2

D2 D2

APM9932

SO-8

1

2

3

45

6

7

8S1

G1

S2

G2 D

D

D

D

G1

S1

G2

S2

D

APM9932C

N- and P-Channel

MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw2

APM9932/C

APM9932/C

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

N-Ch

20

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

P-Ch

-20

V

VDS=18V , VGS=0V

N-Ch

1

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=-18V , VGS=0V

P-Ch

-1

µ

A

VDS=VGS , IDS=250µA

N-Ch

0.6 1.3

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

P-Ch

-0.6 -1.3

V

VGS=±16V , VDS=0V

N-Ch

±100

I

GSS

Gate Leakage Current

V

GS

=±12V , VDS=0V

P-Ch

±100

nA

VGS=10V , IDS=9A

12 18

VGS=4.5V , IDS=7A

N-Ch

17 27

VGS=-4.5V , IDS=-6A

30 42

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=-2.5V , IDS=-5A

P-Ch

45 60

m

Ω

ISD=5A , VGS=0V N-Ch

0.6 1.3

V

SD

a

Diode Forward Voltage

I

SD

=-2A , VGS=0V P-Ch

-0.6 -1.3

V

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

Symbol

Parameter N-Channel P-Channel Unit

V

DSS

Drain-Source Voltage 20 -20

V

GSS

Gate-Source Voltage ±16 ±12

V

I

D

*

Maximum Drain Current – Continuous 15 -6

I

DM

Maximum Drain Current – Pulsed 30 -10

A

TA=25°C

2.5 2.5

P

D

Maximum Power Dissipation

T

A

=100°C

1.0 1.0

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 50

°

C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw3

APM9932/C

Notes

a

: Guaranteed by design, not subject to production testing

Electrical Characteristics (Cont.) (T

A

= 25°C unless otherwise noted)

APM9932/C

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Dynamic

a

N-Ch

14 22

Q

g

Total Gate Charge

P-Ch

19 25

N-Ch

5

Q

gs

Gate-Source Charge

P-Ch

4.1

N-Ch

2.8

Q

gd

Gate-Drain Charge

N-Channel
V

DS

=10V , IDS= 6A

V

GS

=4.5V
P-Channel
V

DS

=-4V , IDS=-1A
V

GS

=-4.5V

P-Ch

1.6

nC

N-Ch

612

t

d(ON)

Turn-on Delay Time

P-Ch

23 45

N-Ch

510

T

r

Turn-on Rise Time

P-Ch

45 80

N-Ch

16 40

t

d(OFF)

Turn-off Delay Time

P-Ch

45 90

N-Ch

520

T

f

Turn-of f Fall Time

N-Channel
V

DD

=10V , IDS=1A ,
V

GEN

=4.5V , RG=10

Ω

P-Channel
V

DD

=-4V , IDS=-1A ,
V

GEN

=-4.5V , RG=10

Ω

P-Ch

32 55

ns

N-Ch

1225

C

iss

Input Capacitance

P-Ch

1400

N-Ch

330

C

oss

Output Capacitance

P-Ch

520

N-Ch

220

C

rss

Reverse Transfer Capacitance

N-Channel
V

GS

=0V , VDS=15V
Frequency=1.0MHz
P-Channel
V

GS

=0V , VDS=-4V
Frequency=1.0MHz

P-Ch

320

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw4

APM9932/C

0 4 8 121620

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0246810

0

4

8

12

16

20

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

Typical Characteristics

VGS=2.5V

ID-Drain Current (A)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

Tj - Junction T emperature (°C)

VGS(th)-Threshold Voltage (V)

(Normalized)

IDS=250uA

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Drain Current

ID - Drain Current (A)

VGS=4.5V

Output Characteristics

ID-Drain Current (A)

VGS=3,4,5,6,7,8,9,10V

VDS - Drain-to-Source V oltage (V)

VGS=10V

VGS=2V

N-Channel

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw5

APM9932/C

012345678910

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0 5 10 15 20

0

300

600

900

1200

1500

1800

0 5 10 15 20 25 30

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Typical Characteristics (Cont.)

VGS - Gate-to-Source V oltage (V)

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Gate-to-Source Voltage

RDS(ON)-On-Resistance (Ω)

(Normalized)

On-Resistance vs. Junction T emperature

VGS=10V
ID=15A

TJ - Junction Temperature (°C)

VDS - Drain-to-Source V oltage (V)

Capacitance

Capacitance (pF)

Ciss

Coss

Crss

Gate Charge

QG - Gate Charge (nC)

VGS-Gate-Source Voltage (V)

VDS=10V
ID=6A

N-Channel

ID=15A

Frequency=1MHz

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw6

APM9932/C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

1

10

20

0.01 0.1 1 10

0

10

20

30

40

50

60

70

80

30

1E-4 1E-3 0.01 0.1 1 10

0.01

0.1

1

30

Source-Drain Diode Forward Voltage

IS-Source Current (A)

TJ=150°C

TJ=25°C

VSD -Source-to-Drain V oltage (V)

Typical Characteristics (Cont.)

Power (W)

Single Pulse Power

Time (sec)

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

Normalized Thermal Transient Impedence, Junction to Ambient

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

Duty Cycle=0.5

D=0.2

D=0.1

D=0.05

D=0.02

SINGLE PULSE

N-Channel

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw7

APM9932/C

012345678910

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

2

4

6

8

10

012345678

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Typical Characteristics

-ID-Drain Current (A)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

Tj - Junction T emperature (°C)

-VGS(th)-Threshold Voltage (V)

(Normalized)

-IDS=250uA

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Drain Current

-ID - Drain Current (A)

-VGS=2.5V

Output Characteristics

-ID-Drain Current (A)

-VGS=2,3,4,5,6,7,8,9,10V

-VDS - Drain-to-Source V oltage (V)

-VGS=4.5V

-VGS=2V

P-Channel

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw8

APM9932/C

0246810

0

400

800

1200

1600

2000

048121620

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

12345678910

0.00

0.02

0.04

0.06

0.08

0.10

0.12

Typical Characteristics (Cont.)

-VGS - Gate-to-Source Voltage (V)

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Gate-to-Source Voltage

RDS(ON)-On-Resistance (Ω)

(Normalized)

On-Resistance vs. Junction T emperature

-VGS=4.5V

-ID=6A

TJ - Junction Temperature (°C)

-VDS - Drain-to-Source Voltage (V)

Capacitance

Capacitance (pF)

Ciss

Coss
Crss

Gate Charge

QG - Gate Charge (nC)

-VGS-Gate-Source Voltage (V)

-VDS=4V

-ID=1A

P-Channel

-ID=6A

Frequency=1MHz

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw9

APM9932/C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.1

1

10

1E-4 1E -3 0.01 0.1 1 10

0.01

0.1

1

30

0.01 0.1 1 10

0

20

40

60

80

30

Source-Drain Diode Forward Voltage

-IS-Source Current (A)

TJ=150°C

TJ=25°C

-VSD -Source-to-Drain V oltage (V)

Typical Characteristics (Cont.)

Power (W)

Single Pulse Power

Time (sec)

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

Normalized Thermal Transient Impedence, Junction to Ambient

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

Duty Cycle=0.5

D=0.2

D=0.1

D=0.05

D=0.02

SINGLE PULSE

P-Channel

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw10

APM9932/C

Packaging Information

Millimeters Inches

Dim

Min. Max. Min. Max.

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0. 010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

φ

18

°

8

°

HE

e1 e2

0.015X45

D

A

A1

0.004max.

1

L

SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw11

APM9932/C

Reference JEDEC Standard J-STD-020A APRIL 1999

Reflow Condition (IR/Convection or VPR Reflow)

Physical Specifications

Pre-heat temperature

183 C

Peak temperature

Time

°

temperature

Classification Reflow Profiles

Convection or IR/

Convection

VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)

120 seconds max

Temperature maintained above 183°C

60 – 150 seconds

Time within 5°C of actual peak temperature

10 –20 seconds 60 seconds

Peak temperature range

220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C

Ramp-down rate

6 °C /second max. 10 °C /second max.

Time 25°C to peak temperature

6 minutes max.

Package Reflow Conditions

pkg. thickness

≥≥≥≥

2.5mm

and all bgas

pkg. thickness < 2.5mm and
pkg. volume

≥≥≥≥

350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw12

APM9932/C

Carrier Tape & Reel Dimensions

A

J

B

T2

T1

C

t

Ao

E

W

Po

P

Ko

Bo

D1

D

F

P1

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability test program

Application A B C J T1 T2 W P E

330 ± 162 +1.5

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw13

APM9932/C

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

Cover Tape Dimensions

Application Carrier Width C over Tape Width Devices Per Reel

SOP- 8

12 9.3 2500