Datasheet APM9930CKC-TR, APM9930KC-TR Datasheet (ANPEC)

APM9930/C

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

20V/15A, R
R
R

=12mΩ(typ.) @ VGS=10V

DS(ON)

=17mΩ(typ.) @ VGS=4.5V

DS(ON)

=25mΩ(typ.) @ VGS=2.5V

DS(ON)

• P-Channel

-20V/-5A, R
R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

DS(ON)

=60mΩ(typ.) @ VGS=-10V

DS(ON)

=72mΩ(typ.) @ VGS=-4.5V

DS(ON)

=98mΩ(typ.) @ VGS=-2.5V

DS(ON)

Applications

Pin Description

APM9930

1
2

G1

3

S2

45

G2 D2

G1

N-Channel MOSFET

SO-8

D1 D1

S1

S2

8S1

D1

7

D1

6

D2

G1

APM9930C

1

2

G1

3

S2

45

G2 D

8S1

7

6

SO-8

D

G2

S1

S2

N- and P-Channel

MOSFET

D

D

D

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

G2

D2 D2

P-Channel MOSFET

Ordering and Marking Information

APM9930 /C

Handling Code
Temp. Range
Package Code

APM9930/C K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

APM9930/C
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

°

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APM9930/C

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 20 -20
Gate-Source Voltage ±12 ±12
Maximum Drain Current – Continuous 15 -5
Maximum Drain Current – Pulsed 30 -10

Parameter N-Channel P-Channel Unit

= 25°C unless otherwise noted)

A

TA=25°C

P

T

T

STG

R

Maximum Power Dissipation

D

Maximum Junction Temperature 150

J

=100°C

T

A

Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50

jA

θ

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

Static

BV

I

DSS

Drain-Source Breakd o w n

DSS

Voltage
Zero Gate Voltage Drain

Current

V

=0V , IDS=250µA

GS

VDS=18V , VGS=0V

=-18V , VGS=0V

V

DS

VDS=VGS , IDS=250µA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

VGS=±12V , VDS=0V

I

GSS

Gate Leakage Current

=±10V , VDS=0V

V

GS

VGS=10V , IDS=15A
VGS=4.5V , IDS=5A

R

DS(ON)

Drain-Source On-state

a

Resistance

VGS=2.5V , IDS=2A
VGS=-10V , IDS=-5A
VGS=-4.5V , IDS=-3.2A
V

=-2.5V , IDS=-1A

GS

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

2.5 2.5

1.0 1.0

APM9930/C

Min. Typ. Max.

N-Ch
P-Ch

20

-20

N-Ch
P-Ch
N-Ch
P-Ch

0.6 1.3

-0.6 -1.3

N-Ch
P-Ch

N-Ch

P-Ch

1

-1

±100

±100
12 15
17 20
25 30
60 70
72 80
98 105

W

°
°

C/W

°

V

A

C
C

Unit

µ

nA

m

V

A

V

Ω

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM9930/C

Electrical Characteristics (Cont.) (T

A

Symbol Parameter Test Condition

a

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

Diode Forward Voltage

a

Total Gate Charge

Gate-Source Charge

Gate-Drain Cha rg e

Turn-on Delay Time

ISD=5A , VGS=0V N-Ch
ISD=-2A , VGS=0V P-Ch

N-Channel
VDS=10V , IDS= 6A

=4.5V

V

GS

P-Channel
V

=-10V , IDS=-1A

DS

VGS=-4.5V
N-Channel

VDD=10V , IDS=1A ,
V

=4.5V , RG=10

T

Turn-on Rise Time

r

GEN

Ω

P-Channel

t

d(OFF)

C

Turn-off Delay Time

T

Turn-off Fall Time

f

Input Capacitance

iss

VDD=-10V , IDS=-1A ,
V

=-4.5V , RG=10

GEN

Ω

VGS=0V

C

Output Capacitance

oss

VDS=15V
Frequency=1.0MHz

C

Reverse Transfer Capacitance

rss

= 25°C unless otherwise noted)

APM9930/C

Min. Typ. Max.

0.6 1.3

-0.6 -1.3

N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

14 22

6.8 16
5

3.6

2.8

1.08
612

21 42

510

45 85
16 40
36 80

520

20 40

1225

495
330
130
220

60

Unit

V

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM9930/C

Typical Characteristics

N-Channel

Output Characteristics

20

VGS=3,4,5,6,7,8,9,10V

16

12

8

ID-Drain Current (A)

4

0

0246810

VGS=2.5V

VGS=2V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

IDS=250uA

Transfer Characteristics

20

15

10

ID-Drain Current (A)

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.030

1.25

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

0.025

0.020

0.015

0.010

0.005

RDS(ON)-On-Resistance (Ω)

0.000
0 4 8 121620

VGS=4.5V

VGS=10V

ID - Drain Current (A)

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APM9930/C

Typical Characteristics (Cont.)

N-Channel

On-Resistance vs. Gate-to-Source Voltage

0.16

0.14

0.12

0.10

0.08

0.06

0.04

RDS(ON)-On-Resistance (Ω)

0.02

0.00
012345678910

VGS - Gate-to-Source V oltage (V)

ID=15A

Gate Charge

10

VDS=10V
ID=6A

8

6

On-Resistance vs. Junction T emperature

2.0

VGS=10V
ID=15A

1.8

1.6

1.4

1.2

1.0

(Normalized)

0.8

RDS(ON)-On-Resistance (Ω)

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

1800

1500

1200

Frequency=1MHz

Ciss

4

2

VGS-Gate-Source Voltage (V)

0

0 5 10 15 20 25 30

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

900

600

Capacitance (pF)

300

0

0 5 10 15 20

Coss

Crss

VDS - Drain-to-Source V oltage (V)

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APM9930/C

Typical Characteristics (Cont.)

N-Channel

Source-Drain Diode Forward Voltage

20

10

TJ=150°C

1

IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD -Source-to-Drain V oltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

TJ=25°C

Single Pulse Power

80
70
60
50
40

Power (W)

30
20
10

0

0.01 0.1 1 10

Time (sec)

30

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

D=0.02

SINGLE PULSE

0.01

1E-4 1E-3 0.01 0.1 1 10

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

30

Square Wave Pulse Duration (sec)

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APM9930/C

Typical Characteristics

P-Channel

Output Characteristics

10

-VGS=4,5,6,7,8,9,10V

8

6

4

-ID-Drain Current (A)

2

0

0246810

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

-VGS=3V

-IDS=250uA

Transfer Characteristics

10

8

6

4

TJ=25°C

TJ=125°C

TJ=-55°C

-ID-Drain Current (A)

2

0

012345

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.10

0.09

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

0.08

0.07

0.06

0.05

-VGS=4.5V

-VGS=10V

RDS(ON)-On-Resistance (Ω)

0.04

0.03
0123456

-ID - Drain Current (A)

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APM9930/C

Typical Characteristics (Cont.)

P-Channel

On-Resistance vs. Gate-to-Source Voltage

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

RDS(ON)-On-Resistance (Ω)

0.05

0.00
2345678910

-VGS - Gate-to-Source Voltage (V)

Gate Charge

10

-VDS=10V

-ID=1A

8

-ID=5A

On-Resistance vs. Junction T emperature

1.8

-VGS=10V

D=5A

-I

1.6

1.4

1.2

1.0

(Normalized)

0.8

RDS(ON)-On-Resistance (Ω)

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

700

600

500

Capacitance

Ciss

Frequency=1MHz

6

4

2

-VGS-Gate-Source Voltage (V)

0

02468101214

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

400

300

200

Capacitance (pF)

100

0

0 5 10 15 20

Coss
Crss

-VDS - Drain-to-Source Voltage (V)

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APM9930/C

Typical Characteristics (Cont.)

P-Channel

Source-Drain Diode Forward Voltage

10

1

TJ=150°C

0.1

-IS-Source Current (A)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

-VSD -Source-to-Drain V oltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

80

60

40

Power (W)

20

0

0.01 0.1 1 10

Time (sec)

30

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

D=0.02

SINGLE PULSE

0.01
1E-4 1E -3 0.01 0.1 1 10

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

30

Square Wave Pulse Duration (sec)

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APM9930/C

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM9930/C

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 C a teg ory 3 .

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM9930/C

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

12.75+

0.15

2 ± 0.5 1 2.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM9930/C

Cover Tape Dimensions

Application Carrier Width C over Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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