Datasheet APM9926AOC-TR, APM9926AKC-TR Datasheet (ANPEC)

Dual N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM9926A

Features

Applications

• 20V/6A , R

DS(ON)

=28mΩ(typ.) @ VGS=4.5V

R

DS(ON)

=38mΩ(typ.) @ VGS=2.5V

••

••

•

Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

•

Reliable and Rugged

••

••

•

SO-8 and TSSOP-8 Packages

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Pin Description

SO-8 TSSOP-8

1

2

3

45

6

7

8S1

G1

S2

G2 D

D

D

D

1

2

3

45

6

7

8D

S1

S1

G1 G2

S2

S2

D

G1

S1DS1

G2

S2

D

S2

G2

S2

DD

G1

S1

DD

Ordering and Marking Information

APM9926A

Handling Code

Temp. Range

Package Code

Package Code
K : SO-8 O : TS S OP -8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel

°

APM 9926A K/O :

APM 9926A
XXXXX

XXXXX - Date Code

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 20

V

GSS

Gate-Source Voltage ±10

V

I

D

*

Maximum Drain Current – Continuous 6

I

DM

Maximum Drain Current – Pulsed 20

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw2

APM9926A

Absolute Maximum Ratings (Cont.) (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

SO-8 1.6

TA=25°C

TSSOP-8 1.0

SO-8 0.625

P

D

Maximum Power Dissipation

T

A

=100°C

TSSOP-8 0.4

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 80

°

C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

APM9926A

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltag e

V

GS

=0V , IDS=250µA

20 V

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=16V , VGS=0V 1

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

0.5 0.7 1.5

V

I

GSS

Gate Leakage Current

V

GS

=±10V , VDS=0V

±

100

nA

VGS=4.5V , IDS=6A

28 32

R

DS(ON)

a

Drain-Source On-state

Resistance

V

GS

=2.5V , IDS=5.2A

38 45

m

Ω

V

SD

a

Diode Forward Voltage ISD=1.7A , VGS=0V

0.7 1.3

V

Dynamic

b

Q

g

Total Gate Charge

10 12

Q

gs

Gate-Source Charge

3.6

Q

gd

Gate-Drain Charge

VDS=10V , IDS= 6A

V

GS

=4.5V ,

2

nC

t

d(ON)

Turn-on Delay Time

17

T

r

Turn-on Rise Time

15

t

d(OFF)

Turn-off Delay Time

45

T

f

Turn-off Fall Time

V

DD

=10V , IDS=1A ,

V

GEN

=4.5V , RG=0.2

Ω

25

ns

C

iss

Input Capacitance

520

C

oss

Output Capacitance

110

C

rss

Reverse Transfer Capacitance

V

GS

=0V

V

DS

=15V

Frequency=1.0MHz

70

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw3

APM9926A

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

0

5

10

15

20

0 5 10 15 20

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.050

0.055

0.060

012345

0

4

8

12

16

20

Typical Characteristics

0.5V

ID-Drain Current (A)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source Voltage (V)

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Threshold Voltage vs. Junction Temperature

Tj - Junction Temperature (°C)

VGS(th)-Threshold Voltage (V)

(Normalized)

IDS=250uA

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Drain Current

ID - Drain Current (A)

VGS=4.5V

Output Characteristics

ID-Drain Current (A)

VGS=2,3,4,5,6,7,8,9,10V

1V

VDS - Drain-to-Source Voltage (V)

VGS=2.5V

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw4

APM9926A

012345678910

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

0 2 4 6 8 10 12 14 16 18

0

2

4

6

8

10

0 5 10 15 20

0

125

250

375

500

625

750

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

Typical Characteristics (Cont.)

VGS - Gate-to-Source Voltage (V)

RDS(ON)-On-Resistance (Ω)

ID=6A

On-Resistance vs. Gate-to-Source Voltage

RDS(ON)-On-Resistance (Ω)

(Normalized)

On-Resistance vs. Junction Temperature

VGS=4.5V
ID=6A

TJ - Junction Temperature (°C)

VDS - Drain-to-Source Voltage (V)

Capacitance

Capacitance (pF)

Ciss

Coss

Crss

Gate Charge

QG - Gate Charge (nC)

VGS-Gate-Source Voltage (V)

VDS=10V
ID=6A

Frequency=1MHz

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw5

APM9926A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

1

10

20

Source-Drain Diode Forward Voltage

IS-Source Current (A)

TJ=150°C

TJ=25°C

VSD -Source-to-Drain Voltage (V)

Typical Characteristics (Cont.)

0.01 0.1 1 10

0

20

40

60

80

Power (W)

Single Pulse Power

Time (sec)

1E-4 1E-3 0.01 0.1 1 10

0.01

0.1

1

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

Normalized Thermal Transient Impedence, Junction to Ambient

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=80°C/W

3.TJM-TA=PDMZthJA

Duty Cycle=0.5

D=0.2

D=0.1

D=0.05

D=0.02

SINGLE PULSE

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw6

APM9926A

Packaging Information

Millimeters Inches

Dim

Min. Max. Min. Max.

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

e1 0.33 0.51 0.013 0.020

e2 1.27BSC 0.50BSC

φ

18

°

8

°

HE

e1 e2

0.015X45

D

A

A1

0.004max.

1

L

SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw7

APM9926A

Millimeters Inches

Dim

Min. Max. Min. Max.

A 1.2 0.047
A1 0.00 0.15 0.000 0.006
A2 0.80 1.05 0.031 0.041

b 0.19 0.30 0.007 0.012

D 2.9 3.1 0.114 0.122

e 0.65 BSC 0.026 BSC

E 6.40 BSC 0.252 BSC
E1 4.30 4.50 0.169 0.177

L 0.45 0.75 0.018 0.030

L1 1.0 REF 0.039REF

R 0.09 0.004

R1 0.09 0.004

S 0.2 0.008

φ

10

°

8

°

0

°

8

°

φ

212

°

REF 12° REF

φ

312

°

REF 12° REF

L

(L1)

(3)

S

(2)

0.25

GAUGE

PLANE

1

b

D

e

2 x E / 2

8

12

e/2

E1 E

7

A1

A2

A

TSSOP-8

Packaging Information (Cont.)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw8

APM9926A

Reflow Condition (IR/Convection or VPR Reflow)

Physical Specifications

Pre-heat temperature

183 C

Peak temperature

Time

°

temperature

Classification Reflow Profiles

Convection or IR/

Convection

VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)

120 seconds max

Temperature maintained above 183°C

60 – 150 seconds

Time within 5°C of actual peak temperature

10 –20 seconds 60 seconds

Peak temperature range

220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C

Ramp-down rate

6 °C /second max. 10 °C /second max.

Time 25°C to peak temperature

6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw9

APM9926A

Carrier Tape & Reel Dimensions

App lica tio n A B C J T1 T2 W P E

330 ± 162 +1.5

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2 .1± 0.1 0.3±0.013

App lica tio n A B C J T1 T2 W P E

330 ± 162 +1.5

12.75+

0.15

2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

F D D1 Po P1 Ao Bo Ko tTSSOP-8

5.5 ± 0. 1 1 .5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013

A

J

B

T2

T1

C

t

Ao

E

W

Po

P

Ko

Bo

D1

D

F

P1

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability test program

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw10

APM9926A

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

12 9.3 2500

TSSOP- 8

12 9.3 2500