Datasheet APM9435KC-TR, APM9435KC-TU Datasheet (ANPEC)

APM9435

P-Channel Enhancement Mode MOSFET

Features

• -30V/-4.6A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 52mΩ(typ.) @ VGS = -10V

DS(ON)

= 80mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM 9435

Handling C ode
Temp. Range
Package Code

APM 9435

APM 9435
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

Drain-Source Voltage -30
Gate-Source Voltage ±25
Maximum Drain Current – Continuous

= 25°C

T

A

-4.6

Maximum Drain Current – Pulsed -20

V

A

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APM9435

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

T

J

)

R

JA

θ

Electrical Characteristics (T

Maximum Power Dissipation

Maximum Operating and Storage Junction Temperature -55 to 150

STG

TA = 25°C
T

= 100°C

A

Thermal Resistance - Junction to Ambient 50 °C/W

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

2.5

1.0

APM9435

Min. Typ

a

.

Max.

Static

BV

DSS

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

t

r

t

d(OFF)

t

f

C

iss

C

oss

C

rss

Drain-Source Breakdown Voltage

=0V, ID=-250µA

V

GS

Zero Gate Voltage Drain Current VDS=24V, VGS=0V -1 uA
Gate T hr es hold Voltage

V

DS=VGS

Gate Leakage Current VGS=±25V, V

VGS=-10V, ID=-4.6A 52 60

Drain-Source On-state Resistance

b

, ID=250µA

=0V ±100 nA

DS

VGS=-4.5V, ID=-2A

Diode Forward Voltage

a

b

ISD=-3A, VGS=0V -0.6 -1.3 V

Total Gate Charge 22.5 29

V

=-15V, VGS=-10V,

Gate-Source Charge 4.5
Gate-Drain Charge

DS

I

=-4.6A

D

Turn - on D elay Ti me 8 17

=-25V, RL=12.5Ω,

V

Turn - on Rise Ti me 8 18
Turn-off D elay Time 35 60
Turn-off F all Tim e

DD

I

=-2A , V

D

=6Ω,

R

G

GEN

=-10V,

Input Ca p a c ita nc e 845

V

=0V, VDS=-25V

Output Capacitance 120

GS

Frequency = 1.0MHZ

Reverse Transfer Capacitance

-30 V

-1 -3 V

80 95

2

11 28

80

W

°

C

Unit

m

nC

ns

pF

Ω

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

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APM9435

Typical Characteristics

Output Characteristics

20

15

10

-ID-Drain Current (A)

5

0

0246810

-VGS=5,6,7,8,9,10V

-VGS=4V

-VGS=3V

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

-IDS=250µA

Transfer Characteristics

20

15

10

TJ=25°C

-ID-Drain Current (A)

5

0

TJ=125°C

012345

-V

GS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.16

0.14

0.12

0.10

RDS(on)-On-Resistance (Ω)

0.08

0.06

0.04

0.02

TJ=-55°C

-VGS=4.5V

-VGS=10V

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

0.00

0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0

-ID - Drain Current (A)

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APM9435

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.30

0.25

0.20

0.15

0.10

RDS(on)-On-Resistance (Ω)

0.05

0.00
12345678910

-VGS - Gate-to-Source Voltage (V)

-ID=4.6A

Gate Charge

10

-VDS=15V

-IDS=4.6A

8

On-Resistance vs. Junction T emperature

2.00

-VGS=10V

-ID=4.6A

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(on)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

1200

1000

Capacitance

Frequency=1MHz

Ciss

6

4

2

-VGS-Gate-Source Voltage (V)

0

0 5 10 15 20 25

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

800

600

400

Capacitance (pF)

200

0

0 5 10 15 20 25 30

Coss
Crss

-VDS - Drain-to-Source Voltage (V)

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APM9435

Typical Characteristics

Source-Drain Diode Forward Voltage

20

10

1

-Source Current (Α)

S

-I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

TJ=150°C

TJ=25°C

-VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

80
70
60
50
40
30

Power (W)

20
10

0

0.01 0.1 1 10

Time (sec)

30

1

Duty Cycle = 0.5

D= 0.2

D= 0.1

0.1

D= 0.05

Thermal Impedance

D= 0.02

Normalized Effective Transient

0.01

1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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30

APM9435

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0. 33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

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APM9435

Physical Specifications

Terminal Material Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Tem perat ur e m ainta ined abov e 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM9435

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245° C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 1 62 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM9435

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

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