Datasheet APM9430KC-TU, APM9430KC-TR Datasheet (ANPEC)

APM9430

N-Channel Enhancement Mode MOSFET

Features

• 20V/4A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 40mΩ(typ.) @ VGS = 4.5V

DS(ON)

= 110mΩ(typ.) @ VGS = 2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D DDD

G

SSS

N-Channel MOSFET

APM 9430

Handling Code
Temp. Range
Package Code

APM 9430

APM 9430
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

Drain-Source Voltage 20
Gate-Source Voltage ±16
Maximu m D rain Curren t – Continuou s

= 25°C

T

A

4

Maximum Drain Current – Pulsed 15

V

A

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APM9430

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C
T

= 100°C

A

Maximum Junction Temperature 150
Storage Temperature Ran ge -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

2.5

1.0

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

T

T

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain C h a rge

gd

V

GS

V

DS

V

DS=VGS

V

GS

VGS=4.5V , IDS=4A
V

GS

V

DS

I

=1A

D

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

V

DD

V

GEN

V

GS

Frequency=1.0MHz

=0V , IDS=250µA

=18V , VGS=0V 1

, IDS=250µA

=±16V , VDS=0V

=2.5V , IDS=2A

=10V , VGS=4.5V ,

=10V , ID=1A ,

=4.5V , RG=0.2

=0V , VDS=15V

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C
C
C

Ω

APM9430

Min. Typ. Max.

20 V

0.7 0.9 1.5
100

±

40 54

110 130

0.75 1.3

6.6 13

2.8
1

13 26
20 45
50 110

20 85
450
100

60

W

C

°

Unit

µ

nA

m

nC

pF

A

V

Ω

V

ns

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

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APM9430

Typical Characteristics

Output Characteristics

15.0

VGS=4,5,6,7,8,9,10V

12.5

10.0

7.5

5.0

ID-Drain Current (A)

2.5

0.0
012345678

VDS - Drain-to-Source V oltage (V)

VGS=3V

VGS=2.5V

VGS=2V

Transfer Characteristics

15.0

12.5

10.0

7.5

5.0

ID-Drain Current (A)

2.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

TJ=125°C

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.25

1.00

0.75

0.50

(Normalized)

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

IDS=250µA

On-Resistance vs. Drain Current

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

RDS(on)-On-Resistance (Ω)

0.02

0.00
012345678

VGS=2.5V

VGS=4.5V

ID - Drain Current (A)

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APM9430

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

RDS(on)-On-Resistance (Ω)

0.02

0.00
012345678910

VGS - Gate-to-Source V oltage (V)

ID=4A

Gate Charge

10

VD=10V
ID=1A

8

On-Resistance vs. Junction T emperature

1.8

VGS=4.5V
ID=4A

1.5

1.2

0.9

(Normalized)

0.6

RDS(on)-On-Resistance (Ω)

0.3

0.0

-50 -25 0 25 5 0 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

750

625

Frequency=1MHz

6

4

2

VGS-Gate-Source Voltage (V)

0

024681012

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

500

375

250

Ciss

Capacitance (pF)

125

0

0 5 10 15 20

Coss
Crss

VDS - Drain-to-Source Voltage (V)

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APM9430

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

15
10

1

-Source Current (Α)

S

I

0.1

0.00 0.25 0.50 0.75 1.00 1.25 1.50

TJ=150°C

TJ=25°C

VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedence, Junction to Ambient

2

Single Pulse Power

60

48

36

24

Power (W)

12

0

0.01 0.1 1 10 100

Time (sec)

1

Duty Cycle = 0.5

D= 0.2

D= 0.1

D= 0.05

0.1

D= 0.02

Thermal Impedance

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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APM9430

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0. 010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

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APM9430

Physical Specifications

Terminal Material Solder-Plated Co p per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperat ur e m ainta ined abov e 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM9430

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 1 62 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM9430

Cover Tape Dimensions

Application Carrier Width C over Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

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