Datasheet APM7316KC-TR Datasheet (ANPEC)

APM7316

Dual N-Channel Enhancement Mode MOSFET

Features

• 20V/6A , R

R

••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

•

Reliable and Rugged

••

•

SO-8 Package

••

=25mΩ(typ.) @ VGS=4.5V

DS(ON)

=40mΩ(typ.) @ VGS=2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered Systems.

Ordering and Marking Information

APM7316

Handling Code Temp. Range Package Code

Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 1 50 C Handling Code TR : Tape & Reel

G1 S2 G2 D2

D1 D1

G1

S1

N-Channel MOSFET

°

1 2 3 45

8S1

D1

7

D1

6

D2

SO-8

D2 D2

G2

S2

APM7316 K :

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

APM7316 XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Parameter Rating Unit

Drain-Source Voltage 20 Gate-Source Voltage ±16 Maximum Drain Current – Continuous 6 Maximum Drain Current – Pulsed 20

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

www.anpec.com.tw1

APM7316

Absolute Maximum Ratings (Cont.) (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150 Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q Q Q

t

d(ON)

T

t

d(OFF)

T

C

Drain-Source Breakdown

DSS

Voltage Zero Gate Voltage Drain

Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2.3A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time Turn-on Rise Time

r

Turn-off Delay Time Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C

=100°C

T

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=250µA

GS

V

=18V , VGS=0V 1

DS

V V

, IDS=250µA

DS=VGS

=±16V , VDS=0V

GS

VGS=4.5V , IDS=6A V

=2.5V , IDS=2A

GS

VDS=10V , IDS= 1A V

=4.5V ,

GS

=10V , IDS=1A ,

V

DD

V

=4.5V , RG=0.2

GEN

V

=0V

GS

V

=15V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

2.5 W

1

C

°

C

°

C/W

°

APM7316

Min. Typ. Max.

20 V

0.5 0.7 1.0 100

±

25 35 40 50

0.7 1.1

9.5 12

2.6

2.5 16 32 40 74 42 78 18 35

675 178 105

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

www.anpec.com.tw2

APM7316

Typical Characteristics

Output Characteristics

20

VGS=3,4,5,6,7,8,9,10V

16

12

8

ID-Drain Current (A)

4

0

012345678

2.5V

2V

1.5V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

IDS=250uA

Transfer Characteristics

20

16

12

8

TJ=125°C

ID-Drain Current (A)

4

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.07

0.06

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

0.05

VGS=2.5V

0.04

0.03

0.02

VGS=4.5V

RDS(ON)-On-Resistance (Ω)

0.01

0.00 0246810

ID - Drain Current (A)

www.anpec.com.tw3

APM7316

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00 12345678910

VGS - Gate-to-Source V oltage (V)

ID=6A

Gate Charge

10

VDS=10V ID=1A

8

On-Resistance vs. Junction T emperature

2.00

VGS=4.5V

D=6A

I

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

1000

800

Frequency=1MHz

Ciss

6

4

2

VGS-Gate-Source Voltage (V)

0

048121620

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

600

400

Capacitance (pF)

200

0

0 4 8 12 16 20

Coss Crss

VDS - Drain-to-Source V oltage (V)

www.anpec.com.tw4

APM7316

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

20 10

1

TJ=150°C

TJ=25°C

IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD -Source-to-Drain V oltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

2

Single Pulse Power

60

48

36

Power (W)

24

12

0

0.01 0.1 1 10 100

Time (sec)

Duty Cycle = 0.5

1

D= 0.2

D= 0.1

D= 0.05

0.1

D= 0.02

Thermal Impedance

Normalized Effective Transient

0.01

1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

www.anpec.com.tw5

APM7316

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0. 013 0.020 e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

www.anpec.com.tw6

APM7316

Physical Specifications

Terminal Material Solder-Plated Co p per (S olde r Ma te rial : 90/10 or 63/37 SnPb ) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature

120 seconds max 60 – 150 seconds 10 –20 seconds 60 seconds 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C 6 °C /second max. 10 °C /second max. 6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg. volume < 350mm³

www.anpec.com.tw7

APM7316

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

www.anpec.com.tw8

APM7316

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, T aiwan, R.O.C. T el : 886-3-5642000 Fax : 886-3-5642050

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, T aiwan, R. O. C. T el : 886-2-89191368 Fax : 886-2-89191369

12 9.3 2500

Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003

www.anpec.com.tw9