Datasheet APM7314KC-TR Datasheet (ANPEC)

APM7314

N-Channel Enhancement Mode MOSFET

Features

• 30V/6A , R

R

••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

=21mΩ(typ.) @ VGS=10V

DS(ON)

=32mΩ(typ.) @ VGS=5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Pin Description

SO-8

1

G1

S2

G2 D2

G1

2

3

45

Top View

D1 D1

S1

G2

8S1

7

6

D1

D1

D2

D2 D2

S2

N-Channel MOSFET

N-Channel MOSFET

Ordering and Marking Information

APM7314

Handling Code

Temp. Range

Package Code

APM7314 K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM7314
XXXXX

Package Code
K : SO-8
Temp. Range
C : 0 to 70 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

°

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

www.anpec.com.tw1

APM7314

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

P

D

T

J

T

STG

R

jA

θ

Drain-Source Voltage 30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 6

Maximum Drain Current – Pulsed 24

Maximum Power Dissipation

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 80

Parameter Rating Unit

= 25°C unless otherwise noted)

A

TA=25°C

T

=100°C

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

Static

BV

V

R

I

DSS

GS(th)

I

GSS

DS(ON)

V

Drain-Source Breakdown

DSS

Volt a ge

Zero Gate Voltage Drain
Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2A , VGS=0V

SD

V

VDS=24V , VGS=0V 1

V
V

V
VGS=10V , IDS=3.5A

V

=0V , IDS=250µA

GS

=24V, VGS=0V, Tj= 55°C

DS

, IDS=250µA

DS=VGS

=±20V , VDS=0V

GS

=5V , IDS=2A

GS

V

A

1.6 W

0.625 W

C

°

C

°

C/W

°

APM7314

Min. Typ. Max.

Unit

30 V

A

5

13

100

±

21 24

32 35

0.6 1.1

µ

nA

m

V

Ω

V

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

www.anpec.com.tw2

APM7314

Electrical Characteristics Cont. (T

Symbol Parameter Test Condition

Dynamic

Notes

b

Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

a

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

=15V , IDS= 10A

V

DS

V

=5V ,

GS

Turn-on Delay Time

V

Turn-on Rise Time

r

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

=15V , IDS=2A ,

DD

=10V , RG=6

V

GEN

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing

= 25°C unless otherwise noted)

A

APM7314

Min. Typ. Max.

15 20

5.8

3.8

11 18

17 26

Ω

37 54

20 30

1200

220

100

Unit

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

www.anpec.com.tw3

APM7314

Typical Characteristics

Output Characteristics

30

25

20

15

10

-Drain Current (A)

DS

I

5

0

012345678910

VGS=4,4.5,6,8,10V

VGS=3.5V

VGS=3V

VGS=2.5V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

1.0

0.8

-Variance (V)

GS(th)

0.6

V

0.4

-50 -25 0 25 50 75 100 125 150

Transfer Characteristics

40

VDS=10V

30

20

-Drain Current (A)

10

DS

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.050

0.045

0.040

0.035

0.030

0.025

0.020

-On-Resistance (Ω)

0.015

0.010

DS(ON)

R

0.005

0.000
0 5 10 15 20 25 30

VGS=4.5V

VGS=10V

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

IDS-Drain Current (A)

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APM7314

Typical Characteristics Cont.

On-Resistance vs. Gate-to-Source Voltage

0.050

0.045

0.040

0.035

0.030

0.025

0.020

- On-Resistance (Ω)

0.015

0.010

DS (ON)

R

0.005

0.000
2345678910

IDS=3.5A

Gate Voltage (V)

Gate Charge

10

8

VDS=15V

IDS=10A

On-Resistaence vs. Junction Temperature

1.6

VGS=10V

=3.5A

I

1.4

1.2

DS

1.0

0.8

-On Resistance (Ω) (Normalized)

DS(ON)

0.6

R

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Capacitance Characteristics

2000

1000

Ciss

6

4

2

-Gate-to-Source Voltage (V)

GS

V

0

0 5 10 15 20 25 30

QG-Total Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

500

C-Capacitance (pF)

100

Coss

Crss

Frequency=1MHz

0.1 1 10

30

VDS-Drain-to-Source Voltage (V)

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APM7314

Typical Characteristics Cont.

Source-Drain Diode Forward Voltage

100

10

1

-Source Current (A)

SD

I

0.1

TJ=125°C

TJ=25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=-55°C

VSD-Source to Drain Voltage Time (sec)

Single Pulse Power

42

R

41

40

39

38

37

Power (W)

36

35

34

33

-50 -25 0 25 50 75 100 125 150

= 2 °C/W

thjc

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

www.anpec.com.tw6

APM7314

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

e1 0.33 0.51 0.013 0.020

e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

www.anpec.com.tw7

APM7314

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Packaging 2500 devices per reel

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM7314

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOP-8

Application

SOP-8

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

A B C J T1 T2 W P E

330±1 62 ± 1.5

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.1 1.55±0.1

12.75 +

0.1 5

1.55+ 0.25

2 + 0.5 12.4 +0.2

4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

2± 0.2

12 + 0.3

- 0.1

8± 0.1 1.75± 0.1

(mm)

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9

APM7314

Cover Tape Dimensions

Carrier Width

Cover Tape Width

(mm)

12

9.3

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002

www.anpec.com.tw10