Datasheet APM7313KC-TU, APM7313KC-TR Datasheet (ANPEC)

APM7313

Dual N-Channel Enhancement Mode MOSFET

Features

• 30V/6A , R

R

••

•

Super High Dense Cell Design for Extremely

••

Low R

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

DS(ON)

=21mΩ(typ.) @ VGS=10V

DS(ON)

=27mΩ(typ.) @ VGS=4.5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Pin Description

SO-8

1
G1
S2
G2 D2

2

3

45

T op View

D1 D1

G1

S1

N-Channel MOSFET N-Channel MOSFET

8S1
7
6

D2 D2

G2

D1
D1
D2

S2

Ordering and Marking Information

APM 7313

Handling Code
Temp. Range
Package Code

APM 7313 K :

APM 7313
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

Drain-Source Voltage 30
Gate-Source Voltage ±20

Parameter Rating Unit

Package Code
K : SO -8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R ee l

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

V

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APM7313

Absolute Maximum Ratings (Cont.) (T

Symbol

*

I

D

I

DM

P

D

T

J

T

STG

R

jA

θ

Maximum Drain Current – Cont inuous 6
Maximum Drain Current – Pulsed 24
Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Am bient 50

* Surface Mounted on FR4 B oard, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Notes

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-stat e

a

Resistance

a

Diode Forward Voltage ISD=2A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=250µA

GS

V

=24V , VGS=0V 1

DS

V
V

, IDS=250µA

DS=VGS

=±20V , VDS=0V

GS

VGS=10V , IDS=3.5A
V

=4.5V , IDS=2A

GS

=15V , IDS= 10A

V

DS

V

=10V

GS

V

=15V , IDS=2A ,

DD

V

=10V , RG=6

GEN

=0V

V

GS

V

=25V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

2.5 W

1.0 W

°

APM7313

Min. Typ. Max.

30 V

11.52
100

±

21 28
27 42

0.7 1.3

30 36

5.8

3.8
11 22
17 33
37 68
20 38

1200

210

95

A

C

°

C

°

C/W

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

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APM7313

Typical Characteristics

Output Characteristics

30

25

20

15

10

-Drain Current (A)

DS

I

5

0

012345678910

VGS=4,4.5,6,8,10V

VGS=3.5V

VGS=3V

VGS=2.5V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

1.0

0.8

(Normalized)

-Threshold Voltage (V)

0.6

GS(th)

V

0.4

-50 -25 0 25 50 75 100 125 150

Transfer Characteristics

40

30

20

-Drain Current (A)

10

DS

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.050

0.045

0.040

0.035

0.030

0.025

0.020

-On-Resistance (Ω)

0.015

0.010

DS(ON)

R

0.005

0.000
0 5 10 15 20 25 30

VGS=4.5V

VGS=10V

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

IDS-Drain Current (A)

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APM7313

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature

0.050

0.045

0.040

0.035

0.030

0.025

0.020

0.015

- On-Resistance (Ω)

0.010

DS (ON)

R

0.005

0.000
345678910

Gate Voltage (V) Tj-Junction T emperature (°C)

1.6

IDS=3.5A

1.4

1.2

1.0

0.8

-On Resistance (Ω) (Normalized)

DS(ON)

0.6

R

-50 -25 0 25 50 75 100 125 150

VGS=10V

=3.5A

I

DS

Gate Charge

10

VDS=15V

IDS=10A

8

6

4

2

-Gate-to-Source Voltage (V)

GS

V

0

0 5 10 15 20 25 30

QG-T otal Gate Charge (nC)

Capacitance Characteristics

2000

1000

500

C-Capacitance (pF)

100

Ciss

Coss

Crss

Frequency=1MHz

0.1 1 10

30

VDS-Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

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APM7313

Typical Characteristics (Cont.)

Source-Drain Diode Forward V oltage

100

10

TJ=125°C

1

-Source Current (A)

SD

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

TJ=-55°C

VSD-Source to Drain Voltage Time (sec)

Normalized Transient Thermal T ransient Impedence, Junction to Ambient

Single Pulse Power

80

60

40

Power (W)

20

0

0.01 0.1 1 10

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

D=0.02

Normalized Effective Transient

SINGLE

0.01
1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

Square Wave Pulse Duration (sec)

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

4. Surface Mounted

thJA

thJA

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=50°C/W

APM7313

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

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APM7313

Physical Specifications

Terminal Material Solder-Plated Copp er (So lder Material : 90/10 or 6 3/3 7 S n Pb)
Lead Solderab ility Meets EIA Spec ification RSI8 6-91, A NSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained abov e 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM7313

Re lia b ility te s t p ro g r am

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003
HOLT MIL-STD-883D-1005.7
PCT JESD-22-B, A102
TST MIL-STD-883D-1011.9
ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V
Latch-Up JESD 78 10ms , Itr > 100mA

Carrier Tape & Reel Dimensions

245°C , 5 SEC
1000 Hrs Bias @ 125 °C
168 Hrs, 100 % RH , 121°C

-65°C ~ 150°C, 200 C y c les

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOP-8

Application

SOP-8

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

A B C J T1 T2 W P E

330±1 62 ± 1.5

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.1 1.55±0.1

12.75 +

0.1 5

1.55+ 0.25

2 + 0.5 12.4 +0.2

4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

2± 0.2

12 + 0.3

- 0.1

8± 0.1 1.75± 0.1

(mm)

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APM7313

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

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