Page 1
APM7312
Dual N-Channel Enhancement Mode MOSFET
Features
• 20V/6A , R
R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
• SO-8 Package
••
=35mΩ(typ.) @ VGS=10V
DS(ON)
=45mΩ(typ.) @ VGS=4.5V
DS(ON)
=110mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM7312
Handling Code
Temp. Range
Package Code
Package Code
K : SO -8
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
SO-8
1
G1
S2
G2 D2
2
3
45
8S1
7
6
T op View
D1 D1
G1
S1
G2
N-Channel MOSFET
°
D1
D1
D2
D2 D2
S2
APM7312 K :
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
APM7312
XXXXX
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Parameter Rating Unit
Drain-Source Voltage 20
Gate-Source Voltage ±16
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw1
Page 2
APM7312
y
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=1.7A , VGS=0V
SD
b
Total Gate Ch a r g e
g
Gate-Source Charge
gs
Gate-D rain C harge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Parameter Rating Unit
TA=25°C
T
=100°C
A
= 25°C unless otherwise noted)
A
=0V , IDS=250µA
V
GS
=18V , VGS=0V 1
V
DS
V
V
, IDS=250µA
DS=VGS
=±16V , VDS=0V
GS
VGS=10V , IDS=6A
VGS=4.5V , IDS=4A
V
=2.5V , IDS=2A
GS
=10V , IDS= 6A
V
DS
V
=4.5V ,
GS
V
=10 V , IDS=1A ,
DD
V
=4.5V , RG=0.2
GEN
=0V
V
GS
V
=15V
DS
Ω
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
2.5
1.0
°
APM7312
Min. T
p. Max.
20 V
0.7 0.9 1.5
100
±
35 40
45 54
110 120
0.7 1.3
12 16
3
4.5
612
510
16 40
520
450
100
60
W
C
°
C
°
C/W
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw2
Page 3
APM7312
Typical Characteristics
Output Characteristics
20
VGS=4,5,6,7,8,9,10V
16
12
8
ID-Drain Current (A)
4
0
012345678
VGS=3V
VGS=2V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.25
1.00
IDS=250uA
Transfer Characteristics
20
15
10
ID-Drain Current (A)
5
0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=25°C
TJ=125°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.08
0.07
0.06
0.05
VGS=4.5V
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
0.04
0.03
0.02
RDS(ON)-On-Resistance (Ω)
0.01
0.00
0 5 10 15 20
VGS=10V
ID - Drain Current (A)
www.anpec.com.tw3
Page 4
APM7312
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
ID=6A
0.04
0.02
RDS(ON)-On-Resistance (Ω)
0.00
12345678910
VGS - Gate-to-Source V oltage (V)
Gate Charge
5
VDS=10V
ID=6A
4
On-Resistance vs. Junction T emperature
2.00
VGS=4.5V
ID=6A
1.75
1.50
1.25
1.00
0.75
(Normalized)
0.50
RDS(ON)-On-Resistance (Ω)
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Capacitance
750
625
Frequency=1MHz
3
2
1
VGS-Gate-Source Voltage (V)
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
500
375
250
Ciss
Capacitance (pF)
125
0
0 5 10 15 20
Coss
Crss
VDS - Drain-to-Source Voltage (V)
www.anpec.com.tw4
Page 5
APM7312
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
TJ=25°C
IS-Source Current (A)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain V oltage (V)
Normalized Thermal Transient Impedance, Junction to Ambient
Single Pulse Power
80
60
40
Power (W)
20
0
0.01 0.1 1 10
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
Thermal Impedance
Normalized Effective Transient
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
D=0.02
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
Square Wave Pulse Duration (sec)
www.anpec.com.tw5
Page 6
APM7312
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0. 013 0.020
e2 1.27BSC 0.50BSC
18
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw6
Page 7
APM7312
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA S pec ification R S I86-91, A NSI/J-STD-002 C a tegory 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Clas sific atio n R e flow Pro file s
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak ) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time with i n 5°C of actual peak temperature
Peak temperature range
Ramp-down ra te
Time 2 5°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Pac k age Reflo w Co ndition s
pkg. thickness ≥≥≥≥ 2.5m m
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
pkg. thickness < 2.5mm an d
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350m m³
www.anpec.com.tw7
Page 8
APM7312
Reliability Test Program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
SOP-8
Application
SOP-8
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
A B C J T1 T2 W P E
330±1 62 ± 1.5
F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.1 1.55±0.1
12.75 +
0.1 5
1.55+ 0.25
2 + 0.5 12.4 +0.2
4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
2± 0.2
12 + 0.3
- 0.1
8± 0.1 1.75± 0.1
(mm)
www.anpec.com.tw8
Page 9
APM7312
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw9
Loading...