Datasheet APM6928OC-TR Datasheet (ANPEC)

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM6928

Pin Description

Ordering and Marking Information

Features

Applications

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

• 30V/4A , R

DS(ON)

=15mΩ(typ.) @ VGS=10V

R

DS(ON)

=25mΩ(typ.) @ VGS=4.5V

••

••

•

Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

•

Reliable and Rugged

••

••

•

TSSOP-8 Package

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

APM 6928

Handling Code
Temp. R ange
Package Code

Package Code
O : T S S O P -8
Op eration Junction T em p. Range
C : -55 to 15 0 C
Handling Code
TR : Ta p e & R e e l

°

APM 6928 O :

APM 6928
XXXXX

XXXXX - Date Code

TSSOP-8

T op View

N-Channel MOSFET

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

*

Maximum Drain Current – Continuous 4

I

DM

Maximum Drain Current – Pulsed 20

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

1

2

3

45

6

7

8D1

S1

S1

G1 G2

S2

S2

D2

G1

S1

D1

S1

G2

S2

D2

S2

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw2

APM6928

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Absolute Maximum Ratings Cont. (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

P

D

Maximum Power Dissipation

T

A

=25°C

1.0 W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 125

°

C/W

APM6928

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdo w n
Voltage

V

GS

=0V , IDS=250µA

30 V

VDS=24V , VGS=0V 1

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=24V, VGS=0V, Tj= 55°C

5

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

13

V

I

GSS

Gate Leakage C urrent

V

GS

=±20V , VDS=0V

±

100

nA

VGS=10V , IDS=4A

20 30

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=4.5V , IDS=3.4A

35 45

m

Ω

V

SD

a

Diode Forward Voltage ISD=1.25A , VGS=0V

0.73

1.2

V

Dynamic

b

Q

g

Total Gate Charge

15 20

Q

gs

Gate-Source Charge

5.8

Q

gd

Gate-Drain Charge

V

DS

=15V , IDS= 10A

V

GS

=5V ,

3.8

nC

t

d(ON)

Turn-on Delay Time

11 18

T

r

Turn-on Rise Time

17 26

t

d(OFF)

Turn-off Delay Time

37 54

T

f

Turn-off Fall Time

V

DD

=15V , IDS=2A ,

V

GEN

=10V , RG=6

Ω

20 30

ns

C

iss

Input Capacitance

1150

C

oss

Output Capacitance

230

C

rss

Reverse Transfer Capacitance

V

GS

=0V

V

DS

=15V

Frequency=1.0MHz

100

pF

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw3

APM6928

Typical Characteristics

Tj-Junction T emperature (°C)

012345

0

5

10

15

20

Transfer Characteristics

VGS-Gate-to-Source Voltage (V)

I

DS

-Drain Current (A)

TJ=125°C

TJ=25°C

TJ=55°C

-50 -25 0 25 50 75 100 125 150

0.6

0.7

0.8

0.9

1.0

1.1

1.2

Threshold Voltage vs. Junction Temperature

V

GS(th)

-V ariance (V)

IDS=250µA

0 5 10 15 20

0.00

0.01

0.02

0.03

0.04

0.05

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

VGS=10V

VGS=4.5V

0246810

0

4

8

12

16

20

Output Characteristics

VDS-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

VGS=4,5,6,7,8,9,10V

VGS=3V

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw4

APM6928

Typical Characteristics

246810

0.00

0.02

0.04

0.06

0.08

0.10

0.12

VGS - Gate-to-Source V oltage (V)

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Gate-to-Source Voltage

ID=4A

-50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RDS(ON)-On-Resistance (Ω)

(Normalized)

On-Resistance vs. Junction T emperature

TJ - Junction Temperature (°C)

VGS=10V
ID=4A

0 5 10 15 20 25 30

0

300

600

900

1200

1500

Coss

VDS - Drain-to-Source Voltage (V)

Capacitance

Capacitance (pF)

Crss

Ciss

0 5 10 15 20 25 30

0

2

4

6

8

10

Gate Charge

QG - Gate Charge (nC)

VGS-Gate-Source Voltage (V)

VDS=15V
IDS=10A

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw5

APM6928

Typical Characteristics Cont.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.1

1

10

20

Source-Drain Diode Forward Voltage

I

SD

-Source Current (A)

VSD-Source to Drain Voltage (V)

TJ=25°CTJ=150°C

0.01 0.1 1 10

0

10

20

30

40

30

Time (sec)

Single Pulse Power

Power (W)

1E-4 1E-3 0.01 0.1 1 10

0.01

0.1

1

30

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

thJA

=125°C/W

3. TJM-TA=PDMZ

thJA

4. Surface Mounted

D=0.02

D=0.05

D=0.1

D=0.2

Duty Cycle=0.5

SINGLE PULSE

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw6

APM6928

Packaging Information

1

D

E1

A2

A1

A

L

e2

e 3

e 1

E

E3

1

PDIP-8 pin ( Reference JEDEC Registration MS-001)

Millimeters InchesDim

Min. Max. Min. Max.

A

5.33 0.210

A1

0.38 0.015

A2

2.92 3.68 0.115 0.145

D

9.02 10.16 0.355 0.400

e1

2.54BSC 0.100BSC

e2

0.36 0.56 0.014 0.022

e3

1.14 1.78 0.045 0.070

E

7.62 BSC 0.300 BSC

E1

6.10 7.11 0.240 0.280

E3

10.92 0.430

L

2.92 3.81 0.115 0.150

φ

115

°

15

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw7

APM6928

Physical Specifications

Reference JEDEC Standard J-STD-020A APRIL 1999

Reflow Condition (IR/Convection or VPR Reflow)

Pre-heat temperature

183 C

Peak temperature

Time

°

temperature

Classification Reflow Profiles

Convection or IR/

Convection

VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)

120 seconds max

Temperature maintained above 183°C

60 – 150 seconds

Time within 5°C of actual peak temperature

10 –20 seconds 60 seconds

Peak temperature range

220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C

Ramp-down rate

6 °C /second max. 10 °C /second max .

Time 25°C to peak temperature

6 minutes max.

Package Reflow Conditions

pkg. thickness

≥≥≥≥

2.5mm

and all bgas

pkg. thickness < 2.5mm and
pkg. volume

≥≥≥≥

350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Terminal M aterial Solder-Plated Copp er (So lder Material : 90/10 or 63/37 S n Pb)
Lead Solderab ility Meets EIA S pecification RSI86-91, ANS I/J-ST D -002 Category 3.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw8

APM6928

Application

A B C

J T1 T2 W P E

330 ± 1 62 +1.5 12.75+ 0.15 2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

F D

D1 Po P1 Ao Bo Ko tTSSOP-8

5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013

(mm)

Carrier Tape

A

J

B

T2

T1

C

t

Ao

E

W

Po

P

Ko

Bo

D1

D

F

P1

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability test program

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw9

APM6928

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TSSOP- 8

12 9.3 2500