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APM4953KC-TR
Datasheet (ANPEC)
9 pgs226.33 Kb0

Datasheet APM4953KC-TU, APM4953KC-TR Datasheet (ANPEC)

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Page 1
APM4953
Dual P-Channel Enhancement Mode MOSFET
Features
• -30V/-4.9A, R
R
••
• Super High Density Cell Design
••
••
• Reliable and Rugged
••
••
• SO-8 Package
••
= 53mΩ(typ.) @ V
DS(ON)
= 80mΩ(typ.) @ V
DS(ON)
= -10V
GS
= -4.5V
GS
Pin Description
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
/
5
/ ,
!
"#
&5
%
$
SO − 8
5
, ,
/
5
/
, ,
P-Channel MOSFET
,
,
,
APM4953
Handling Code
Temp. Range
Package Code
APM 4953 K :
APM4953 XXXXX
Absolute Maximum Ratings (T
Package Code K : S O -8 Operation Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tub e TR : Tap e & R ee l
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
Drain-Source Voltage -30
DSS
V
Gate-Source Voltage ±25
GSS
T
ID* Maximum Drain Current  Continuous
= 25°C
A
-4.9
V
A
IDM Maximum Drain Current  Pulsed -30
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
www.anpec.com.tw1
Page 2
APM4953
q
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
T
= 25°C
A
T
= 100°C
A
2.5
1.0
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
*
R
θ
JA
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol Parameter Test Condition
Thermal Resistance - Junction to Ambient 50 °C/W
APM4953
=
. Max.
Min.
Typ
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
VSD Diode Forward Voltage> I
Drain-Source Breakdown
DSS
Voltage Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
>
=0V , I
V
GS
=-24V , V
V
DS
V
DS=VGS
=±25V , VDS=0V
V
GS
=-250µA
DS
=0V -1 µA
GS
, IDS=-250µA
VGS=-10V , IDS=-4.9A
V
=-4.5V , IDS=-3.6A
GS
=-1.7A , VGS=0V
SD
-30
-1 -1.5 -2
±100
53 60
80 95
-0.7 -1.3
Dynamic=
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
V
=-15V , IGS=-10V
DS
=-4.6A
l
D
=-15V , ID=-2A ,
V
DD
V
=-10V , R
GEN
=7.5Ω
R
L
V
=0V
GS
=-25V
V
DS
uency=1.0MHz
Fre
=6Ω
G
22.3 29
4.65
2
10 18
15 20
22 38
15 25
1260
340
220

Notes

a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
W
°C
Unit
V
V
nA
mΩ
V
nC
ns
pF
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
www.anpec.com.tw2
Page 3
APM4953
Typical Characteristics
Output Characteristics
30
25
20
15
10
-ID-Drain Current (A)
5
0
012345678
-V/5= 5,6,7,8,9,10V
-V/5=4V
-V/5=3V
-V/5=2V
-VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
30
25
20
15
TJ=125°C
10
-ID-Drain Current (A)
5
0
012345
TJ=25°C
-V
GS - Gate-to-Source Voltage (V)
TJ=-55°C
Threshold Voltage vs. Junction Temperature
1.50
1.25
1.00
0.75
(Normalized)
0.50
0.25
-VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
-IDS=250µA
On-Resistance vs. Drain Current
0.14
0.12
0.10
0.08
0.06
0.04
RDS(on)-On-Resistance (Ω)
0.02
0.00 03691215
V/5=-4.5V
V/5=-10V
-ID - Drain Current (A)
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Page 4
APM4953
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
-I,= 4.9A
RDS(on)-On-Resistance (Ω)
0.050
0.025 12345678910
-VGS - Gate-to-Source Voltage (V)
Gate Charge
10
-VD=10V
-ID=4.9A
8
On-Resistance vs. Junction Temperature
2.00
-VGS=10V
-ID=4.9A
1.75
1.50
1.25
1.00
0.75
(Normalized)
0.50
RDS(on)-On-Resistance (Ω)
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Capacitance
2800
2400
2000
Frequency=1MHz
6
4
2
-VGS-Gate-Source Voltage (V)
0
0 5 10 15 20 25
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
1600
1200
800
Capacitance (pF)
400
0
0 5 10 15 20 25 30
Ciss
Coss
Crss
-VDS - Drain-to-Source Voltage (V)
www.anpec.com.tw4
Page 5
APM4953
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
30
10
1
-Source Current (Α)
S
-I
0.1
0.0 0.2 0.4 0. 6 0.8 1.0 1. 2 1.4 1.6 1.8
TJ=150°C
TJ=25°C
-VSD-Source-to-Drain Voltage (V )
Normalized Thermal Transient Impedence, Junction to Ambient
2
Single Pulse Power
50
40
30
20
Power (W)
10
0
0.01 0.1 1 10 100
Time (sec)
Duty Cycle = 0.5
1
D= 0.2
D= 0.1
D= 0.05
0.1
Thermal Impedance
Normalized Effective Transient
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
D= 0.02
SINGLE PULSE
0.01 1E-4 1E-3 0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
www.anpec.com.tw5
Page 6
APM4953
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
1 8
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
www.anpec.com.tw6
Page 7
APM4953
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature
120 seconds max 60  150 seconds 10 20 seconds 60 seconds 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C 6 °C /second max. 10 °C /second max. 6 minutes max.
VPR
Package Re flow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg. volume < 350mm³
www.anpec.com.tw7
Page 8
APM4953
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
P
P1
Ao
J
W
E
F
Po
A
t
D
Bo
D1
C
Ko
T2
B
T1
Application A B C J T1 T2 W P E
330 ± 1 62 +1.5
F D D1 Po P1 Ao Bo Ko tSOP- 8
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
12.75+
0.15
2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
www.anpec.com.tw8
Page 9
APM4953
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
www.anpec.com.tw9
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