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APM4947KC-TU
Datasheet (ANPEC)
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Datasheet APM4947KC-TUL, APM4947KC-TU, APM4947KC-TR Datasheet (ANPEC)

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Page 1
APM4947
Dual P-Channel Enhancement Mode MOSFET
Features
• -30V/-2.5A , R
R
••
• Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• SOP-8 Package
••
=90mΩ(typ.) @ V
DS(ON)
=145mΩ(typ.) @ V
DS(ON)
=-10V
GS
GS
=-4.5V
Pin Description
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
/
5
/ ,
!
"#
&5
%
$
SO − 8
5
, ,
/
5
/
, ,
P-Channel MOSFET
,
,
,
APM 4947
Lead Free Code
Handling Code Temp. Range
Package Code
AP M 49 47 K :
APM4947 XXXXX
Absolute Maximum Ratings
Package Code K : S O -8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tu be TR : Tape & Reel Lead Free Code : L : Le ad Fre e D evice B lan k : O rgin al Device
XXXXX - Date Code
(T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
Drain-Source Voltage -30
DSS
V
Gate-Source Voltage ±20
GSS
*
I
Maximum Drain Current  Continuous -2.5
D
IDM Maximum Drain Current  Pulsed -20
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
www.anpec.com.tw1
Page 2
APM4947
q
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
PD Maximum Power Dissipation
T
=25°C
A
=100°C
T
A
2.5
1.0
TJ Maximum Junction Temperature 150
T
Storage Temperature Range -55 to 150
STG
*
R
θ
JA
Thermal Resistance  Junction to Ambient 62.5
Electrical Characteristics (T
Symbol Parameter Test Condition
= 25°C unless otherwise noted)
A
APM4947
Min.
Typ. Max.
Static
BV
V
R
DS(ON)
V
I
DSS
GS(th)
I
GSS
Drain-Source Breakdown
DSS
Voltage Zero Gate Voltage Drain
Current
Gate Threshold Voltage
=0V , I
V
GS
V
=-24V , V
DS
V
DS=VGS
, I
DS
DS
=-250µA
GS
=-250µA
Gate Leakage Current VGS =±20V , VDS=0V
Drain-Source On-state
=
Resistance
=
Diode Forward Voltage ISD=-1.7A , VGS=0V
SD
VGS=-10V , IDS=-2.5A
=-4.5V , IDS=-2A
V
GS
-30
=0V -1 µA
-1 -1.5 -2
±100
90 120
145 185
-0.7 -1.3
Dynamic>
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t
Turn-on Delay Time
d(ON)
Tr Turn-on Rise Time
t
Turn-off Delay Time
d(OFF)
Tf Turn-off Fall Time
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
=-15V , IDS=-2.5A
V
DS
V
=-10V
GS
V
=-10V , IDS=-1A ,
DD
V
=-10V , R
GEN
VGS=0V
V
=-25V
DS
Fre
uency=1.0MHz
=6Ω
G
8 12
1.8
1.4
7 15
10 20
13 30
10 20
550
118
78
W
°C °C
°C/W
Unit
V
V
nA
mΩ
V
nC
ns
Pf
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
www.anpec.com.tw2
Page 3
APM4947
Typical Characteristics
Output Characteristics
20
16
12
8
-ID-Drain Current (A)
4
0
02468
-VGS= 6,7,8,9,10V
-VGS=5V
-VGS=4V
-VGS=3V
-VDS - Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
1.50
-IDS =250µA
Transfer Characteristics
20
16
12
8
-ID-Drain Current (A)
4
0
01234567
Tj=125oC
Tj=25oC
Tj=-55oC
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.36
0.30
1.25
1.00
0.75
(Normalized)
0.50
0.25
-VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
0.24
0.18
0.12
DS(ON)-On-Resistance (Ω)
0.06
R
0.00 03691215
-VGS=4.5V
-VGS=10V
-ID - Drain Current (A)
www.anpec.com.tw3
Page 4
APM4947
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
0.3
-ID= 2.5A
0.2
0.1
RDS(ON)-On-Resistance (Ω)
0.0 0246810
-VGS - Gate-to-Source Voltage (V)
Gate Charge
10
-VDS=15 V
-I
=2.5 A
8
DS
On-Resistance vs. Junction Temperature
1.6
-VGS = 10V
-I
1.4
1.2
1.0
(Normalized)
0.8
RDS(ON)-On-Resistance (Ω)
0.6
0.4
= 2.5A
DS
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
750
600
Capacitance
Frequency=1MHz
Ciss
6
4
2
-VGS-Gate-Source Voltage (V)
0
02468
Q
G - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
450
300
Capacitance (pF)
150
0
0 6 12 18 24 30
Crss
Coss
-VDS - Drain-to-Source Voltage (V)
www.anpec.com.tw4
Page 5
APM4947
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
Tj=150oC
1
Tj=25oC
-IS-Source Current (A)
0.1
0.00.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD -Source-to-Drain Voltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
2
1
Single Pulse Power
30
25
20
15
10
Power (W)
5
0
0.01 0.1 1 10 30
Time (sec)
Duty Cycle=0.5
0.1
D=0. 2
D=0. 1
D=0.05 D=0.02
0.01
Thermal Impedance
SINGLE PULSE
Normalized Effective Transient
1E-3
1E-4 1E-3 0. 01 0.1 1 10 30
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
Square Wave Pulse Duration (sec)
2
DM
J
J
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
3.TJM-TA=PDMZ
4.Surface Mounted
thJA
thJA
www.anpec.com.tw5
=62.5oC/W
Page 6
APM4947
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
1 8
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
www.anpec.com.tw6
Page 7
APM4947
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Peak temperature
Time
Convection or IR/ Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak
temperature Peak temperature range Ramp-down rate
Time 25°C to peak temperature
120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C 6 °C /second max. 10 °C /second max. 6 minutes max.
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bags
Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg. volume < 350mm³
www.anpec.com.tw7
Page 8
APM4947
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
W
E
F
Po
A
P
P1
Ao
J
D
Bo
D1
C
Ko
T2
B
T1
Application
SOP-8
A B C J T1 T2 W P E
330±1 62 ± 1.5
F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.1 1.55±0.1
12.75 +
0.1 5
1.55+ 0.25
2 + 0.5 12.4 +0.2
4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
2± 0.2
12 + 0.3
- 0.1
8± 0.1 1.75± 0.1
(mm)
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
www.anpec.com.tw8
Page 9
APM4947
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2003
www.anpec.com.tw9
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