Page 1
APM4925
P-Channel Enhancement Mode MOSFET
Features
• -30V/-6.1A, R
R
••
• Super High Density Cell Design
••
••
• Reliable and Rugged
••
••
• SO-8 Package
••
= 24mΩ(typ.) @ VGS = -10V
DS(ON)
= 30mΩ(typ.) @ VGS = -4.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
1
G1
S2
G2 D2
2
3
45
8S1
7
6
SO − 8
S2
D2 D2
G1
S1
G2
D1 D1
P-Channel MOSFET
D1
D1
D2
APM4925
Handling Code
Temp. Range
Package Co de
APM4925
APM4925
XXXXX
Absolute Maximum Ratings (T
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 °C
Handling Code
TU : Tu be
TR : Ta pe & R ee l
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage -30
Gate-Source Voltage ±25
Maximum Drain Current – Continuous
= 25°C
T
A
-6.1
Maximum Drain Current – Pulsed -40
V
A
*Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
www.anpec.com.tw1
Page 2
APM4925
y
)
Absolute Maximum Ratings (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
P
D
T
J
T
STG
R
JA
θ
Maximum Power Dissipation
TA = 25°C
= 100°C
T
A
Maximum J unction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance - Junction to Ambient 50 °C/W
2.5
1
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbo l Parameter Test Con d ition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON
V
SD
Dynamic
Q
Q
Q
t
d(ON)
t
d(OFF)
C
C
C
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
b
Drain-Source On-state Resistance
b
Diode Forw ard Voltage ISD= -1.7A, VGS=0V -0.7 -1.3 V
a
Total Gate Charge 48 58
g
Gate-Source Charge 10
gs
Gate-Drain Charge
gd
=0V, ID= -250µA
V
GS
V
= -24V, VGS=0V -1
DS
V
DS=VGS
V
GS
, ID= -250µA
= ±25V , VDS=0V
VGS= -10V, ID= -6.1A 24 27
V
= -4.5V, ID= -5.1A 30 35
GS
V
= -15V, VGS= -10V,
DS
= -4.6A
I
D
Turn-on Delay Time 17 33
= -25V, RL=12.5Ω,
V
t
Turn-on Rise Time 18 35
r
Turn-off Delay Time 70 128
t
Turn-off Fall Time
f
Input Capacitance 3200
iss
Output Capacitance 560
oss
Reverse Capacitance
rss
DD
I
= -2A , V
D
=6Ω,
R
G
V
=0V, VDS= -25V
GS
GEN
= -10V,
Frequency = 1.0M HZ
APM4925
a
Min. T
.
p
Max.
-30 V
-1 -1.5 -2 V
±
9
30 56
250
100
W
°
C
Unit
µ
nA
m
nC
ns
pF
A
Ω
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
www.anpec.com.tw2
Page 3
APM4925
Typical Characteristics
Output Characteristics
50
-VGS=4,5,6,7,8,9,10V
40
30
20
-ID-Drain Current (A)
10
0
0246810
-VDS - Drain-to-Source V oltage (V)
-VGS=3V
Transfer Characteristics
50
40
30
TJ=25°C
TJ=125°C
TJ=-55°C
20
-ID-Drain Current (A)
10
0
012345
-V
GS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.35
1.20
1.05
(Normalzed)
0.90
0.75
-VGS(th)-Threshold Voltage (V)
0.60
-50 -25 0 25 50 75 100 125 150
-IDS=250µA
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
On-Resistance vs. Drain Current
0.06
0.05
0.04
0.03
0.02
RDS(on)-On-Resistance (Ω)
0.01
0.00
0 5 10 15 20 25 30
-ID - Drain Current (A)
-VGS=4.5V
-VGS=10V
www.anpec.com.tw3
Page 4
APM4925
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.050
0.045
0.040
0.035
0.030
0.025
0.020
RDS(on)-On-Resistance (Ω)
0.015
0.010
2345678910
-ID=6.1A
-VGS - Gate-to-Source Voltage (V)
Gate Charge
10
-VDS=15V
-ID=4.6A
8
On-Resistance vs. Junction T emperature
1.8
-VGS=10V
-ID=6.1A
1.6
1.4
1.2
(Normalized)
1.0
RDS(on)-On-Resistance (Ω)
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Capacitance
4500
3600
Frequency=1MHz
Ciss
6
4
2
-VGS-Gate-Source Voltage (V)
0
0 1020304050
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
2700
1800
Capacitance (pF)
900
0
0 6 12 18 24 30
Coss
Crss
-VDS - Drain-to-Source Voltage (V)
www.anpec.com.tw4
Page 5
APM4925
Typical Characteristics
Source-Drain Diode Forward Voltage
30
10
TJ=150°C
1
-Source Current (Α)
S
-I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ=25°C
-VSD-Source-to-Drain Voltage (V )
Normalized Thermal Transient Impedence, Junction to Ambient
Single Pulse Power
100
80
60
40
Power (W)
20
0
0.01 0.1 1 10
Time (sec)
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
Thermal Impedance
D= 0.02
Normalized Effective Transient
0.01
1E-4 1E-3 0.01 0.1 1 10
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
SINGLE PULSE
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
www.anpec.com.tw5
Page 6
APM4925
Package Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0. 010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BS C 0.50BSC
18
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
www.anpec.com.tw6
Page 7
APM4925
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Packaging 2500 devices per reel for SOP-8
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
°
183 C
Classification Reflow Profiles
Peak temperature
Time
Convection or IR/ Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak
temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
Package Reflow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bags
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
www.anpec.com.tw7
Page 8
APM4925
R e lia bilit y te s t pr o g r am
SOLDERA BILITY MIL-STD-883D-2003
HO LT MIL-STD-883D-1005.7
PCT JESD-22-B, A102
TST MIL-STD-883D-1011.9
245°C , 5 SEC
1000 Hrs Bias @ 125 °C
168 Hrs, 100 % RH , 121°C
-65°C ~ 150°C, 200 Cycles
ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V
La tc h -Up J E S D 7 8 10 ms , Itr > 100mA
Test item Method Description
Carrier Tape
W
E
F
Po
P
P1
Ao
D
Bo
D1
T2
t
Ko
A
Application
A B C J T1 T2 W P E
330 ± 1 62 +1.5
F D D1 Po P1 Ao Bo Ko t
SOP- 8
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013
F D D1 Po P1 Ao Bo Ko t
11.5 ± 0.1 1.5 +0.1 1.5+ 0.25 4.0 ± 0.1 2.0 ± 0.1 8.2 ± 0.1 13± 0.1 2.5± 0.1
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
12.75+
0.15
J
C
B
T1
2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
.35±0.013
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Page 9
APM4925
Cover Tape Dimensions
Carrier Width
Cover Tape Width
(mm)
12
9.3
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
www.anpec.com.tw9
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