Datasheet APM4890KC-TR Datasheet (ANPEC)

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

SO − 8

APM4890

Handling Code
Temp. Range
Package Cod e

Package Code
K : S O -8
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

APM 4890 K :

APM4890
XXXXX

XXXXX - Date Code

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

Maximum Drain Current – Continuous 11.5

I

DM

Maximum Drain Current – Pulsed 50

A

TA=25°C

2.5

P

D

Maximum Power Dissipation

T

A

=100°C

1.0

W

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

N-Channel MOSFET

G

S

D

1

2

3

45

6

7

8S

S

S

GD

D

D

D

• 30V/11.5A, R

DS(ON)

= 9mΩ(typ.) @ VGS = 10V

R

DS(ON)

=14.5mΩ(typ.) @ VGS = 4.5V

••

••

•

High Density Cell Design

••

••

•

Reliable and Rugged

••

••

•

SO-8 Package

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw2

Thermal Characteristics

Symbol

Parameter Rating Unit

T

J

Maximum Junction Temperature 150

T

STG

Storage Temperature Range -55 to 150

°C

R

θ

JA

Thermal Resistance - Junction to Ambient 50 °C/W

Electrical Characteristics (TA=25°C unless otherwise noted)

APM4890

Symbol Parameter Test Condition

Min. Typ

a

.

Max.

Unit

Static

BV

DSS

Drain-Source Breakdown Voltage

V

GS

=0V, ID=250µA

30 V

I

DSS

Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 uA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, ID=250µA

13V

I

GSS

Gate Leakage Current VGS=±20V, V

DS

=0V ±100 nA

VGS=10V, ID=11.5A 9 11

R

DS(ON)

Drain-Source On-state Resistance

b

VGS=4.5V, ID=5A

14.5 16

m

Ω

V

SD

Diode Forw ar d Voltage

b

ISD=2.3A, VGS=0V 0.6 1.2 V

Dynamic

a

Q

g

Total Gate Charge 45 60

Q

gs

Gate-Source Charge 10

Q

gd

Gate-Drain Charge

V

DS

=15V, VGS=10V,

I

D

=10A

8

nC

t

d(ON)

Turn-on Delay Time 16 25

t

r

Turn-on Rise Time 24 35

t

d(OFF)

Turn-off Delay Time 78 110

t

f

Turn-off Fall Time

V

DD

=15V, RL=15Ω,

I

D

=1A , V

GEN

=10V,

R

G

=6Ω,

42 80

ns

C

iss

Input Capacitance 2000

C

oss

Output Capacitance 400

C

rss

Reverse Transfer Capacitance

V

GS

=0V, VDS=25V

Frequency = 1. 0MHZ

220

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse widt h ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw3

Typical Characteristics

0246810

0

10

20

30

40

50

Output Characteristics

VDS-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

VGS=5,6,7,8,9,10V

VGS=3V

VGS=4V

012345

0

10

20

30

40

50

Transfer Characteristics

VGS-Gate-to-Source Voltage (V)

I

DS

-Drain Current (A)

TJ=125°C

TJ=25°C

TJ=-55°C

-50 -25 0 25 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Threshold Voltage vs. Junction Temperature

Tj-Junction T emperature (°C)

IDS=250µA

0 5 10 15 20 25 30 35

0.000

0.004

0.008

0.012

0.016

0.020

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

VGS=10V

VGS=4.5V

VGS(th)-Threshold Voltage (V)

(Normalized)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw4

0 9 18 27 36 45

0

2

4

6

8

10

Typical Characteristics Cont.

0246810

0.00

0.02

0.04

0.06

0.08

0.10

On-Resistance vs. Gate-to-Source Voltage

R

DS (ON)

-On-Resistance (Ω)

Gate Voltage (V)

IDS=11.5A

-50 -25 0 25 50 75 100 1 25 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

On-Resistaence vs. Junction T emperature

R

DS(ON)

-On-Resistance (Ω)

(Normalized)

Tj-Junction T emperature (°C)

VGS=10V
IDS=11.5A

Gate Charge

QG-T otal Gate Charge (nC)

V

GS

-Gate-to-Source Voltage (V)

VDS=15V

IDS=11.5A

0 5 10 15 20 25 30

0

500

1000

1500

2000

2500

3000

Capacitance Characteristics

VDS-Drain-to-Source Voltage (V)

C-Capacitance (pF)

Crss

Coss

Ciss

Frequency=1MHz

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw5

Typical Characteristics Cont.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

10

50

Source-Drain Diode Forward Voltage

I

SD

-Source Current (A)

VSD-Source to Drain Voltage

TJ=25°C

TJ=150°C

0.01 0.1 1 10

0

20

40

60

80

Time (sec)

Single Pulse Power

Power (W)

1E-4 1E-3 0.01 0.1 1 10

0.01

0.1

1

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

thJA

=50°C/W

3. TJM-TA=PDMZ

thJA

4. Surface Mounted

D=0.02

D=0.05

D=0.1

D=0.2

Duty Cycle=0.5

SINGLE PULSE

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw6

Packaging Information

Millimeters Inches

Dim

Min. Max. Min. Max.

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

φ

18

°

8

°

HE

e1 e2

0.015X45

D

A

A1

0.004max.

1

L

SOP-8 pin ( Reference JEDEC Registration MS-012)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw7

Reflow Condition (IR/Convection or VPR Reflow)

Physical Specifications

Pre-heat temperature

183 C

Peak temperature

Time

°

temperature

Classificatio n Reflow Pr of ile s

Convection or IR/

Convection

VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)

120 seconds max

Temperature maintained above 183°C

60 – 150 seconds

Time within 5°C of actual peak temperature

10 –20 seconds 60 seconds

Peak temperature range

220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C

Ramp-down rate

6 °C /second max. 10 °C /second max.

Time 25°C to peak temperature

6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb).
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw8

Carrier Tape & Reel Dimensions

Application

A B C J T1 T2 W P E

SOP-8

330±1 62 ± 1.5

12.75 +

0.1 5

2 + 0.5 12.4 +0.2

2± 0.2

12 + 0.3

- 0.1

8± 0.1 1.75± 0.1

Application

F D D1 Po P1 Ao Bo Ko t

SOP-8

5.5 ± 0.1 1.55±0.1

1.55+ 0.25

4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

(mm)

A

J

B

T2

T1

C

t

Ao

E

W

Po

P

Ko

Bo

D1

D

F

P1

Test item Method Description

SOLDERABILITY MIL-STD-8 83D-2 003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability test program

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw9

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

12 9.3 2500