Datasheet APM4835KC-TU, APM4835KC-TR Datasheet (ANPEC)

APM4835

P-Channel Enhancement Mode MOSFET

Features

• -30V/-8A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 16mΩ(typ.) @ VGS = -10V

DS(ON)

= 24mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM 4835

Handling Code
Temp. Range
Package Code

APM 4835

APM 4835
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO-8
Operation Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

Drain-Source Voltage -30
Gate-Source Voltage ±25

*

Maximum Drain Current – C ontinuous

= 25°C

T

A

-8

V

A

Maximum Drain Current – Pulsed -50

*Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

www.anpec.com.tw1

APM4835

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Am bient 50 °C/W

2.5
1

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

V

=0V, ID= -250µA

GS

Zero Gate Voltage Drain Current VDS= -30V, VGS=0V -1
Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state Resistance

V

DS=VGS

V

GS

VGS= -10V, ID= -8A

b

, ID= -250µA

= ±25V , VDS=0V

VGS= -4.5V, ID= -5A

Diode Forward Voltage

SD

a

Total Gate Charge 48 60

g

Gate-Source Charge 10

gs

Gate-Drain Charge

gd

b

ISD= -3A, VGS=0V -0.7 -1.3 V

V

= -15V, VGS= -10V,

DS

I

= -4.6A

D

Turn-on Delay Time 16 30

= -25V, ID= -2A,

V

t

Turn-on Rise Time 17 30

r

Turn-off Delay Time 75 120

t

Turn -off Fall Ti me

f

Input Capacitance 3800

iss

Output Capacitance 590

oss

Revers e Transfer Capa c ita n c e

rss

DD

V

= -10V, RG=6

GEN

=12.5

R

L

V

GS

Ω

=0V, VDS=-25V

Frequency = 1.0MHZ

Ω

APM4835

a

.

Min. Typ

Max.

-30 V

-1 -1.5 -2 V

±

16 19
24 30

9

31 80

250

100

°

W

C

Unit

A

µ

nA

m

Ω

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

www.anpec.com.tw2

APM4835

Typical Characteristics

Output Characteristics

50

-VGS=4,5,6,7,8,9,10V

40

30

20

-ID-Drain Current (A)

10

0

0246810

-VDS - Drain-to-Source V oltage (V)

-VGS=3V

Transfer Characteristics

50

40

30

TJ=25°C

TJ=125°C

TJ=-55°C

20

-ID-Drain Current (A)

10

0

012345

-V

GS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

(Normalized)

0.75

-VGS(th)-Threshold Voltage (V)

0.50

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

-IDS=250µA

On-Resistance vs. Drain Current

0.05

0.04

0.03

0.02

0.01

RDS(on)-On-Resistance (Ω)

0.00
0 1020304050

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

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APM4835

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.07

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00
0246810

-ID=8A

-VGS - Gate-to-Source Voltage (V)

Gate Charge

10

-VDS=15V

-ID=4.6A

8

On-Resistance vs. Junction T emperature

1.8

-VGS=10V

-ID=8A

1.6

1.4

1.2

(Normalized)

1.0

RDS(on)-On-Resistance (Ω)

0.8

0.6

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

4500

3600

Frequency=1MHz

Ciss

6

4

2

-VGS-Gate-Source Voltage (V)

0

0 1020304050

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

2700

1800

Capacitance (pF)

900

0

0 6 12 18 24 30

Coss

Crss

-VDS - Drain-to-Source Voltage (V)

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APM4835

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

30

10

TJ=150°C

1

-Source Current (Α)

S

-I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

-VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

100

80

60

40

Power (W)

20

0

0.01 0.1 1 10

Time (sec)

1

Duty Cycle = 0.5

D= 0.2

D= 0.1

0.1

D= 0.05

Thermal Impedance

D= 0.02

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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APM4835

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BS C 0.50BSC

18

φ

Min. Max. Min. Max.

Millimeters Inches

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

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APM4835

Physical Specifications

Terminal Material Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification R eflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature mainta ined above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4835

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 1 62 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM4835

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, T aipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

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