Datasheet APM4532KC-TR Datasheet (ANPEC)

APM4532

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

30V/5A, R
R

=35mΩ(typ.) @ VGS=10V

DS(ON)

=60mΩ(typ.) @ VGS=4.5V

DS(ON)

• P-Channel

-30V/-3.5A, R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

DS(ON)

=85mΩ(typ.) @ VGS=-10V

DS(ON)

=135mΩ(typ.) @ VGS=-4.5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Pin Description

1
2

G1

3

S2

45

G2 D2

D1 D1

G1

S1

N-Channel MOSFET P-Channel MOSFET

SO-8

8S1
7
6

G2

D1
D1
D2

D2 D2

S2

Ordering and Marking Information

APM4532

Handling Code
Temp. Range
Package Code

APM4532 K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

APM4532
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

°

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APM4532

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter N-Channel P-Channel Unit

V

Drain-Source Voltage 30 -30

DSS

V

Gate-Source Voltage ±25 ±25

GSS

*

I

Maximum Drain Current – Continuous 5 -3.5

D

IDM Maximum Drain Current – Pulsed 20 -20

PD

Maximum Power Dissipation

TA=25°C
T

=100°C

A

2 2

0.8 0.8

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

R

θ

Thermal Resistance – Junction to Ambient 62.5

jA

V

A

W

°C
°C

°C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM4532

Min.

Typ. Max.

Unit

Static

BV

V

R

DS(ON)

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage

SD

N-Ch

=0V , IDS=250µA

V

GS

VDS=24V , VGS=0V
V

=-24V , VGS=0V

DS

VDS=VGS , IDS=250µA
V

DS=VGS

, IDS=-250µA

P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch

V

=±25V , VDS=0V

GS

P-Ch

VGS=10V , IDS=5A

N-Ch

VGS=4.5V , IDS=4A
VGS=-10V , IDS=-3.5A

P-Ch

=-4.5V , IDS=-2.5A

V

GS

ISD=1.7A , VGS=0V N-Ch
I

=-1.7A , VGS=0V P-Ch

SD

30

-30
1

-1

1 1.5 2

-1 -1.5 -2
±100
±100
35 45
60 70

85 95

135 150

0.7 1.3

-0.7 -1.3

V

µA

V

nA

mΩ

V

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM4532

Electrical Characteristics (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition



Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

a

Total Gate Charge



g

Gate-Source Charge



gs

Gate-Drain Charge



gd

Turn-on De lay Time



Turn-on Rise Time



r

Turn-off Delay Time



Turn-off Fall Time



f

N-Channel
V

=10V , IDS= 5A

DS

V

=4.5V

GS



P-Channel
V

=-10V , IDS=-3.5A

DS

V

=-4.5V

GS



N-Channel
V

=10V , IDS=1A ,

DD

V

=4.5V , RG=10Ω

GEN

P-Channel
V

=-10V , IDS=-1A ,

DD

V

=-4.5V , RG=10Ω

GEN



N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

Dynamic

N-Ch

C

C

Input Capacitance



iss

Output Capacitance



oss

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

P-Ch
N-Ch
P-Ch
N-Ch

C

Reverse Transfer Capacitance



rss

P-Ch

APM4532

Typ. Max.

Min.

7 15
8 15

4.7
2

1.1
1
10 15
8 15
8 20
7 20
20 28
15 28
5 15
7 18
376
495
115
130
58
60

Unit

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM4532

Typical Characteristics

N-Channel

Output Characteristics

20

15

10

ID-Drain Current (A)

5

0

012345

VGS=5,6,7,8,9,10V

VGS=4V

VGS=3V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

IDS=250uA

Transfer Characteristics

20.0

17.5

15.0

12.5

10.0

7.5

ID-Drain Current (A)

5.0

2.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

TJ=125°C

TJ=25°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
0 2 4 6 8 10 12 14 16 18 20

VGS=4.5V

VGS=10V

ID - Drain Current (A)

TJ=-55°C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM4532

Typical Characteristics (Cont.)

N-Channel

On-Resistance vs. Gate-to-Source Voltage

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

RDS(ON)-On-Resistance (Ω)

0.02

0.00
2345678910

VGS - Gate-to-Source V oltage (V)

ID=5A

Gate Charge

10

VDS=10 V
I

= 5 A

8

DS

6

On-Resistance vs. Junction T emperature

2.0

VGS=10V
ID=5A

1.8

1.6

1.4

1.2

1.0

(Normalized)

0.8

RDS(ON)-On-Resistance (Ω)

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

700

600

500

400

Capacitance

Frequency=1MHz

Ciss

4

2

VGS-Gate-Source Voltage (V)

0

0 2 4 6 8 101214

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

300

200

Capacitance (pF)

100

0

0 5 10 15 20

Coss
Crss

VDS - Drain-to-Source V oltage (V)

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APM4532

Typical Characteristics (Cont.)

N-Channel

Source-Drain Diode Forward Voltage

20
10

1

TJ=150°C

TJ=25°C

IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD -Source-to-Drain V oltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

2

Single Pulse Power

30

25

20

15

Power (W)

10

5

0

0.01 0.1 1 10

Time (sec)

30

Duty Cycle=0.5

1

D=0.2

D=0.1

D=0.05

0.1

D=0.02

Thermal Impedance

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=62.5°C/W

3.TJM-TA=PDMZthJA

30

Square Wave Pulse Duration (sec)

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APM4532

Typical Characteristics

P-Channel

Output Characteristics

20

15

10

5

-ID-Drain Current (A)

0

012345

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

-VGS=6,7,8,9,10V

-VGS=5V

-VGS=4V

-VGS=3V

-IDS=250uA

Transfer Characteristics

20
18
16
14
12
10

8
6

-ID-Drain Current (A)

4
2
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

TJ=25°C

TJ=125°C

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.250

0.225

0.200

0.175

0.150

0.125

0.100

0.075

RDS(ON)-On-Resistance (Ω)

0.050

0.025

0.000
012345678910

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM4532

Typical Characteristics (Cont.)

P-Channel

On-Resistance vs. Gate-to-Source Voltage

0.30

0.25

0.20

0.15

0.10

0.05

RDS(ON)-On-Resistance (Ω)

0.00
2345678910

-VGS - Gate-to-Source Voltage (V)

-ID=3.5A

Gate Charge

10

9

-VDS=10 V

-I

= 3.5 A

8

DS

7
6
5
4
3
2

-VGS-Gate-Source Voltage (V)

1
0

012345678

QG - Gate Charge (nC)

On-Resistance vs. Junction T emperature

1.8

-VGS=10V

D=3.5A

-I

1.6

1.4

1.2

1.0

(Normalized)

0.8

RDS(ON)-On-Resistance (Ω)

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

800
700
600
500
400
300

Capacitance (pF)

200
100

0

0 5 10 15 20

-VDS - Drain-to-Source Voltage (V)

Frequency=1MHz

Ciss

Coss
Crss

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM4532

Typical Characteristics (Cont.)

P-Channel

Source-Drain Diode Forward Voltage

20
10

1

TJ=150°C

TJ=25°C

-IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-VSD -Source-to-Drain V oltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

2

Single Pulse Power

30

25

20

15

Power (W)

10

5

0

0.01 0.1 1 10

Time (sec)

30

1

Duty Cycle=0.5

D=0.2

D=0.1

D=0.05

0.1

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

D=0.02

SINGLE PULSE

0.01
1E-4 1E-3 0.01 0.1 1 10

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=62.5°C/W

3.TJM-TA=PDMZthJA

30

Square Wave Pulse Duration (sec)

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APM4532

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM4532

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 C a teg ory 3 .

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4532

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM4532

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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