Datasheet APM4500KC-TR Datasheet (ANPEC)

APM4500

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

20V/8A , R

R

=22mΩ(typ.) @ VGS=4.5V

DS(ON)

=30mΩ(typ.) @ VGS=2.5V

DS(ON)

• P-Channel

-20V/-4.3A , R

R

••

•

Super High Dense Cell Design for Extremely Low

••

R

DS(ON)

••

• Reliable and Rugged

••

••

• SO-8 Package

••

=80mΩ(typ.) @ VGS=-4.5V

DS(ON)

=105mΩ(typ.) @ VGS=-2.5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Pin Description

1

2

G1

3

S2

45

G2 D2

D1 D1

G1

S1

N-Channel MOSFET P-Channel MOSFET

SO-8

G2

8S1

D1

7

D1

6

D2

D2 D2

S2

Ordering and Marking Information

APM4500

Handling Code

Temp. Range

Package Code

APM4500 K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

APM4500
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

°

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APM4500

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 20 -20

Gate-Source Voltage ±12 ±12

Maximum Drain Current – Continuous 8 -4.3

Maximum Drain Current – Pulsed 35 -17

Parameter N-Channel P-Channel Unit

= 25°C unless otherwise noted)

A

TA=25°C

P

T

T

STG

R

Maximum Power Dissipation

D

Maximum Junction Temperature 150

J

T

=100°C

A

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 62.5

jA

θ

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

Static

BV

I

DSS

Drain-Source Breakdown

DSS

Volt a g e

Zero Gate Voltage Drain
Current

V

=0V , IDS=250µA

GS

VDS=16V , VGS=0V

=-16V , VGS=0V

V

DS

VDS=VGS , IDS=250µA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

VGS=±12V , VDS=0V

I

GSS

Gate Leakage Current

=±12V , VDS=0V

V

GS

VGS=4.5V , IDS=8A

R

DS(ON)

V

SD

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage

VGS=2.5V , IDS=5.2A

VGS=-4.5V , IDS=-4.3A

V

=-2.5V , IDS=-2A

GS

ISD=1.7A , VGS=0V N-Ch

I

=-1.25A , VGS=0V P-Ch

SD

2.5 2.5

1.0 1.0

APM4500

Min.

N-Ch

P-Ch

20

-20

N-Ch

P-Ch

N-Ch

P-Ch

0.5 0.7 1

-0.45 -1

N-Ch

P-Ch

N-Ch

P-Ch

Typ. Max.

1

-1

±100

±100

22 26

30 36

80 90

105 115

0.8 1.3

-0.7 -1.3

V

A

W

°C

°C

°C/W

Unit

V

µA

V

nA

mΩ

V

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

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APM4500

Electrical Characteristics (Cont.) (T

A

Symbol Parameter Test Condition

Q

Q

Q

t

d(ON)

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time

T

Turn-on Rise Time

r

N-Channel

=10V , IDS= 8A

V

DS

V

=4.5V

GS

P-Channel

V

=-10V , IDS=-3A

DS

V

=-4.5V

GS

N-Channel

V

=10V , IDS=1A ,

DD

V

=4.5V , RG=0.2

GEN

Ω

Dynamic

P-Channel

t

d(OFF)

T

C

C

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

V

=-10V , IDS=-1A ,

DD

V

=-4.5V , RG=6Ω

GEN

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

C

Reverse Transfer Capacitance

rss

= 25°C unless otherwise noted)

APM4500

Min.

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

Typ. Max.

10 13

912

3

3

2.5

1

16 32

13 21.5

40 75

36 56

42 78

45 69.5

20 35

37 57.5

675

510

178

270

105

120

Unit

nC

ns

pF

Notes

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

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APM4500

Typical Characteristics

N-Channel MOSFET

Output Characteristics

20

VGS=3,4,5,6,7,8,9,10V

16

12

8

ID-Drain Current (A)

4

0

012345678

VGS=2.5V

VGS=2V

VGS=1.5V

VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

IDS=250µA

Transfer Characteristics

20

16

12

8

ID-Drain Current (A)

4

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=25°C

TJ=125°C

TJ=-55°C

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.06

0.05

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

0.04

VGS=2.5V

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
0246810

VGS=4.5V

ID - Drain Current (A)

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APM4500

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
12345678910

VGS - Gate-to-Source Voltage (V)

ID=8A

Gate Charge

10

VDS=10V
ID=1A

8

On-Resistance vs. Junction Temperature

2.00

VGS=4.5V

D=8A

I

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

RDS(ON)-On-Resistance (Ω)

0.25

0.00

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

1000

800

Frequency=1MHz

Ciss

6

4

2

VGS-Gate-Source Voltage (V)

0

048121620

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

600

400

Capacitance (pF)

200

0

0 4 8 12 16 20

Coss

Crss

VDS - Drain-to-Source Voltage (V)

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APM4500

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

20

10

1

TJ=150°C

TJ=25°C

IS-Source Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

2

Single Pulse Power

60

48

36

24

Power (W)

12

0

0.01 0.1 1 10 100

Time (sec)

Duty Cycle = 0.5

1

D= 0.2

D= 0.1

D= 0.05

0.1

D= 0.02

Thermal Impedance

Normalized Effective Transient

0.01

1E-4 1E-3 0.01 0. 1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=62.5°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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APM4500

Typical Characteristics

P-Channel MOSFET

Output Characteristics

10

-VGS=3,4.5,6,7,8V

8

6

4

-ID-Drain Current (A)

2

0

012345678910

-VGS=2V

-VGS=1.5V

-VGS=1V

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

-IDS=250µA

1.25

Transfer Characteristics

10

8

6

4

TJ=25°C

-ID-Drain Current (A)

2

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=125°C

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.16

0.14

TJ=-55°C

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

0.12

0.10

0.08

0.06

RDS(ON)-On-Resistance (Ω)

0.04

0.02
0246810

-VGS=2.5V

-VGS=4.5V

-ID - Drain Current (A)

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APM4500

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.20

0.18

0.16

0.14

0.12

0.10

0.08

RDS(ON)-On-Resistance (Ω)

0.06

0.04
12345678

-VGS - Gate-to-Source Voltage (V)

-ID=4.3A

Gate Charge

5

-VDS=10V

-ID=3A

4

3

On-Resistance vs. Junction Temperature

2.0

-VGS=4.5V

-I

D=4.3A

1.8

1.6

1.4

1.2

1.0

(Normalized)

0.8

0.6

RDS(ON)-On-Resistance (Ω)

0.4

0.2

-50-250 255075100125150

TJ - Junction Temperature (°C)

800

700

600

500

Capacitance

Frequency=1MHz

Ciss

2

1

-VGS-Gate-Source Voltage (V)

0

0246810

Q

G - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

400

300

Capacitance (pF)

200

100

0 5 10 15 20

Coss

Crss

-VDS - Drain-to-Source Voltage (V)

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APM4500

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

10

TJ=150°C

TJ=25°C

-IS-Source Current (A)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD -Source-to-Drain Voltage (V)

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

14

12

10

8

6

Power (W)

4

2

0

0.01 0.1 1 10 100

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

D=0.01

0.01
1E-4 1E-3 0.01 0.1 1 10 100

SINGLE PULSE

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=62.5°C/W

3.TJM-TA=PDMZthJA

Square Wave Pulse Duration (sec)

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APM4500

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

e1 0.33 0.51 0.013 0.020

e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

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APM4500

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4500

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM4500

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

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