Datasheet APM4463KC-TU, APM4463KC-TR Datasheet (ANPEC)

APM4463

P-Channel Enhancement Mode MOSFET

Features

• -20V/-10A, R

R

••

•

High Density Cell Design

••

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

=12mΩ(typ.) @ VGS =-4.5V

DS(ON)

=18mΩ(typ.) @ VGS =-2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM4463

Handling Code
Temp. Range
Package Cod e

APM 4463 K :

APM4463
XXXXX

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

I

D

I

DM

P

D

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Drain-Source Voltage -20
Gate-Source Voltage ±16
Maximum Drain Current – Continuous -10
Maximum Drain Current – P ulse d -50
Maximum Power Dissipation

Parameter Rating Unit

Package Code
K : S O -8
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

TA=25°C
T

=100°C

A

2.5

1.0

V

A

W

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

www.anpec.com.tw1

APM4463

Thermal Characteristics

Symbol

T

J

T

STG

R

JA

θ

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance - Junction to Ambient 50 °C/W

Parameter Rating Unit

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Sour ce Break do w n Voltage

DSS

V

=0V, ID=-250µA

GS

Zero Gate Voltage Drain Current VDS=-16V, VGS=0V 1 uA
Gate Threshold Voltage
Gate Leakage Current VGS=±16V, V

Drain-Sour ce On-state Resistance

V

DS=VGS

VGS=-4.5V, ID=-10A 12 17

b

, ID=-250µA

=0V ±100 nA

DS

VGS=-2.5V, ID=-8A

Diode Forward Voltage

SD

a

Total Gate Charge 37 45

g

Gate-Source Charge 6.5

gs

Gate-Drain Charge

gd

b

ISD=-2.3A, VGS=0V 0.7 1.1 V

=-10V, VGS=-4.5V,

V

DS

=-10A

I

D

Turn-on Delay Time 40 60

=-10V, RL=-10Ω,

V

t

Turn-on Rise Time 40 60

r

Turn-off Delay Time 170 270

t

Turn-off Fall Time

f

Input Capacitance 4500

iss

Output Cap acita nce 1100

oss

Reverse Transfer Capacitance

rss

DD

=-1A , V

I

D

=6Ω,

R

G

V

=0V, VDS=-15V

GS

GEN

=-4.5V,

Frequency = 1.0 MH Z

Min. Typ

-20 V

0.7 1 1.5 V

APM4463

a

.

18 25

2.5

90 150

810

Max.

°C

Unit

m

Ω

nC

ns

pF

Notes

a

: Guaranteed by design, not s u bj ec t to p r oduction testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

www.anpec.com.tw2

APM4463

Typical Characteristics

Output Characteristics

30

-VGS=3,4,5,6,7,8,9,10V

25

20

15

10

-Drain Current (A)

DS

-I

5

0

0246810

-VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

-VGS=2V

-IDS=250µA

Transfer Characteristics

40
35
30
25
20
15

-Drain Current (A)

DS

10

-I

5
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ=25°C

TJ=125°C

TJ=-55°C

-VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.035

0.030

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

0.025

-VGS=-2.5V

0.020

0.015

-On-Resistance (Ω)

0.010

DS(ON)

R

0.005

0.000
0 1020304050

-VGS=-4.5V

-IDS-Drain Current (A)

www.anpec.com.tw3

APM4463

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.050

0.045

0.040

0.035

0.030

0.025

0.020

-On-Resistance (Ω)

0.015

DS (ON)

0.010

R

0.005

0.000
12345678910

-VGS-Gate-Source Voltage (V)

Gate Charge

5

-VDS=10V

-IDS=10A

4

3

-IDS=10A

On-Resistaence vs. Junction T emperature

1.8

-VGS=4.5V

-IDS=10A

1.6

1.4

1.2

1.0

(Normalized)

-On-Resistance (Ω)

0.8

DS(ON)

R

0.6

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Capacitance Characteristics

7000

6000

5000

4000

Frequency=1MHz

Ciss

2

1

-Gate-to-Source Voltage (V)

GS

-V

0

0 1020304050

QG-T otal Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

3000

2000

C-Capacitance (pF)

1000

0

0 5 10 15 20

Coss

Crss

-VDS-Drain-to-Source Voltage (V)

www.anpec.com.tw4

APM4463

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

40

10

1

-Source Current (A)

SD

-I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ=150°C

TJ=25°C

-VSD- Source-to-Drain Voltage (V)

Normalized Transient Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

80

60

40

Power (W)

20

0

0.01 0.1 1 10

30

Time (sec)

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

Thermal Impedance

D=0.02

Normalized Effective Transient

SINGLE PULSE

0.01
1E-4 1E-3 0.01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

Square Wave Pulse Duration (sec)

1. Duty Cycle , D=t1/t2

2. Per Unit Base=R

3. TJM-TA=PDMZ

4. Surface Mounted

thJA

thJA

www.anpec.com.tw5

=50°C/W

30

APM4463

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0. 010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

www.anpec.com.tw6

APM4463

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb).
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classificatio n R e flo w P r of ile s

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

www.anpec.com.tw7

APM4463

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-8 83D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application

SOP-8

Application

SOP-8

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

A B C J T1 T2 W P E

330±1 62 ± 1.5

F D D1 Po P1 Ao Bo Ko t

5.5 ± 0.1 1.55±0.1

12.75 +

0.1 5

1.55+ 0.25

2 + 0.5 12.4 +0.2

4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

2± 0.2

12 + 0.3

- 0.1

8± 0.1 1.75± 0.1

(mm)

www.anpec.com.tw8

APM4463

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

www.anpec.com.tw9